JPH0487634U - - Google Patents
Info
- Publication number
- JPH0487634U JPH0487634U JP13020790U JP13020790U JPH0487634U JP H0487634 U JPH0487634 U JP H0487634U JP 13020790 U JP13020790 U JP 13020790U JP 13020790 U JP13020790 U JP 13020790U JP H0487634 U JPH0487634 U JP H0487634U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor manufacturing
- exhaust
- semiconductor
- exhaust port
- outside
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 239000002516 radical scavenger Substances 0.000 description 1
Description
第1図はこの考案の半導体製造装置の一実施例
である炉体とクリーンルームと排気口の関係を示
す断面図、第2図は従来半導体製造装置の炉体と
クリーンルームと排気口の関係を示す断面図であ
る。
1……クリーンルーム、2……炉体、3……プ
ロセスチユーブ、4……スカンベンジヤー、5…
…排気口。なお、図中、同一符号は同一、または
相当部分を示す。
Figure 1 is a cross-sectional view showing the relationship between the furnace body, clean room, and exhaust port in an embodiment of the semiconductor manufacturing device of this invention, and Figure 2 shows the relationship among the furnace body, clean room, and exhaust port of a conventional semiconductor manufacturing device. FIG. 1...Clean room, 2...Furnace body, 3...Process tube, 4...Scavenger, 5...
…exhaust port. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
けた熱酸化拡散炉内で、半導体基板を半導体用材
料ガスにより熱酸化、拡散させる半導体製造装置
において、熱により温められた半導体用材料ガス
や炉内で生成した熱粒子が、プロセスチユーブの
入口から外に出てクリーンルーム内まで熱によつ
て飛散しないように、排出専用の排気口の位置を
調節できるようにし、排気口から排気させるよう
にしたことを特徴とする半導体製造装置。 During the semiconductor manufacturing process, semiconductor manufacturing equipment thermally oxidizes and diffuses semiconductor substrates with semiconductor material gas in a thermal oxidation diffusion furnace equipped with heating means around the outside. In order to prevent the generated thermal particles from going outside from the inlet of the process tube and scattering due to heat into the clean room, the position of the exhaust port exclusively for exhaust can be adjusted and the exhaust can be exhausted from the exhaust port. A semiconductor manufacturing device characterized by:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13020790U JPH0487634U (en) | 1990-11-30 | 1990-11-30 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13020790U JPH0487634U (en) | 1990-11-30 | 1990-11-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0487634U true JPH0487634U (en) | 1992-07-30 |
Family
ID=31877567
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13020790U Pending JPH0487634U (en) | 1990-11-30 | 1990-11-30 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0487634U (en) |
-
1990
- 1990-11-30 JP JP13020790U patent/JPH0487634U/ja active Pending
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