JPH01161777A - 非晶質半導体太陽電池の製造方法 - Google Patents

非晶質半導体太陽電池の製造方法

Info

Publication number
JPH01161777A
JPH01161777A JP62320755A JP32075587A JPH01161777A JP H01161777 A JPH01161777 A JP H01161777A JP 62320755 A JP62320755 A JP 62320755A JP 32075587 A JP32075587 A JP 32075587A JP H01161777 A JPH01161777 A JP H01161777A
Authority
JP
Japan
Prior art keywords
solar cell
layer
deposition rate
manufacturing
amorphous semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62320755A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0542141B2 (enrdf_load_html_response
Inventor
Sota Moriuchi
森内　荘太
Yoshihiko Takeda
喜彦 竹田
Katsuhiko Nomoto
克彦 野元
Tetsuhiro Okuno
哲啓 奥野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP62320755A priority Critical patent/JPH01161777A/ja
Publication of JPH01161777A publication Critical patent/JPH01161777A/ja
Publication of JPH0542141B2 publication Critical patent/JPH0542141B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP62320755A 1987-12-17 1987-12-17 非晶質半導体太陽電池の製造方法 Granted JPH01161777A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62320755A JPH01161777A (ja) 1987-12-17 1987-12-17 非晶質半導体太陽電池の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62320755A JPH01161777A (ja) 1987-12-17 1987-12-17 非晶質半導体太陽電池の製造方法

Publications (2)

Publication Number Publication Date
JPH01161777A true JPH01161777A (ja) 1989-06-26
JPH0542141B2 JPH0542141B2 (enrdf_load_html_response) 1993-06-25

Family

ID=18124911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62320755A Granted JPH01161777A (ja) 1987-12-17 1987-12-17 非晶質半導体太陽電池の製造方法

Country Status (1)

Country Link
JP (1) JPH01161777A (enrdf_load_html_response)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03131072A (ja) * 1989-10-17 1991-06-04 Canon Inc 光起電力素子
JP2001291878A (ja) * 2000-04-05 2001-10-19 Tdk Corp 光起電力素子及びその製造方法
JP2005150723A (ja) * 2003-11-12 2005-06-09 Samsung Electronics Co Ltd フォトダイオード及びその製造方法
JP2014003275A (ja) * 2012-06-14 2014-01-09 Nexpower Technology Corp 薄膜太陽電池及びその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03131072A (ja) * 1989-10-17 1991-06-04 Canon Inc 光起電力素子
JP2001291878A (ja) * 2000-04-05 2001-10-19 Tdk Corp 光起電力素子及びその製造方法
JP2005150723A (ja) * 2003-11-12 2005-06-09 Samsung Electronics Co Ltd フォトダイオード及びその製造方法
JP2014003275A (ja) * 2012-06-14 2014-01-09 Nexpower Technology Corp 薄膜太陽電池及びその製造方法
TWI475704B (zh) * 2012-06-14 2015-03-01 Nexpower Technology Corp 薄膜太陽能電池及其製造方法

Also Published As

Publication number Publication date
JPH0542141B2 (enrdf_load_html_response) 1993-06-25

Similar Documents

Publication Publication Date Title
US9812599B2 (en) Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys
JPH04233772A (ja) 黄銅鉱太陽電池の製造方法
JPH06267868A (ja) シリコンオキサイド半導体膜の成膜方法
JPH01161777A (ja) 非晶質半導体太陽電池の製造方法
JPS61222277A (ja) 光起電力装置及びその製造方法
KR20010033375A (ko) 태양 전지 장치와 그 제조 방법
JPS5864070A (ja) フツ素を含むアモルフアスシリコン太陽電池
US4366334A (en) Photovoltaic cell usable as a solar cell
JP2775460B2 (ja) 非晶質太陽電池の製造方法
JP3453315B2 (ja) 非晶質シリコン太陽電池及びその製造方法
JPH03101274A (ja) アモルファス太陽電池の製造方法
JPS59101879A (ja) 薄膜太陽電池
JPS632385A (ja) 多層構造ｐ型シリコン膜および太陽電池
JPS595679A (ja) 光電変換装置
JPH0799776B2 (ja) アモルフアスシリコン太陽電池の製造方法
KR940001790B1 (ko) 금속절연 반도체형 다결정 실리콘 태양전지의 제조방법
JPS6258675B2 (enrdf_load_html_response)
JPS5948922A (ja) 非晶質半導体
JP2000196122A (ja) 光起電力素子
JPH06268240A (ja) 薄膜太陽電池及びその製造方法
JP2002246317A (ja) プラズマｃｖｄ法による薄膜形成方法
JPS6193675A (ja) 光起電力装置の製造方法
KR100368737B1 (ko) 염소가포함된미세결정질실리콘을갖는비정질실리콘태양전지및이의제조방법
JPH0614553B2 (ja) アモルファス炭化シリコン系半導体およびその製造方法
JPH0997919A (ja) 光導電膜及びその製造方法並びにその膜を用いた光起電力素子

Legal Events

Date Code Title Description
S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees