JPH0114200B2 - - Google Patents

Info

Publication number
JPH0114200B2
JPH0114200B2 JP58105357A JP10535783A JPH0114200B2 JP H0114200 B2 JPH0114200 B2 JP H0114200B2 JP 58105357 A JP58105357 A JP 58105357A JP 10535783 A JP10535783 A JP 10535783A JP H0114200 B2 JPH0114200 B2 JP H0114200B2
Authority
JP
Japan
Prior art keywords
single crystal
gas
gallium garnet
iridium
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58105357A
Other languages
English (en)
Japanese (ja)
Other versions
JPS605094A (ja
Inventor
Arata Sakaguchi
Kazuyoshi Watanabe
Masahiro Ogiwara
Ken Ito
Toshihiko Nagareo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP58105357A priority Critical patent/JPS605094A/ja
Publication of JPS605094A publication Critical patent/JPS605094A/ja
Publication of JPH0114200B2 publication Critical patent/JPH0114200B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP58105357A 1983-06-13 1983-06-13 ガリウムガ−ネツト単結晶の製造方法 Granted JPS605094A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58105357A JPS605094A (ja) 1983-06-13 1983-06-13 ガリウムガ−ネツト単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58105357A JPS605094A (ja) 1983-06-13 1983-06-13 ガリウムガ−ネツト単結晶の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP12985688A Division JPH02175685A (ja) 1988-05-27 1988-05-27 ガリウムガーネット単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS605094A JPS605094A (ja) 1985-01-11
JPH0114200B2 true JPH0114200B2 (enExample) 1989-03-09

Family

ID=14405469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58105357A Granted JPS605094A (ja) 1983-06-13 1983-06-13 ガリウムガ−ネツト単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS605094A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4687055B2 (ja) * 2004-09-29 2011-05-25 日立化成工業株式会社 単結晶の製造方法およびその装置
CN102634848A (zh) * 2011-12-20 2012-08-15 元亮科技有限公司 一种石榴石型单晶生长用抽吸装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2047113B (en) * 1979-04-12 1983-08-03 Union Carbide Corp Method for producing gadolinium gallium garnet
JPS5933558B2 (ja) * 1981-04-17 1984-08-16 日立金属株式会社 Ｇｇｇ単結晶を製造する方法

Also Published As

Publication number Publication date
JPS605094A (ja) 1985-01-11

Similar Documents

Publication Publication Date Title
EP2330236B1 (en) METHOD AND APPARATUS FOR MANUFACTURING SiC SINGLE CRYSTAL FILM
JP5476637B2 (ja) ゲッターによる多結晶グループｉｉｉの金属窒化物および作製方法
US4534821A (en) Single crystal growing of rare earth-gallium garnet
JP4905138B2 (ja) 酸化アルミニウム単結晶の製造方法
JP6445283B2 (ja) 窒化ガリウム結晶の製造方法
JPH02175685A (ja) ガリウムガーネット単結晶の製造方法
JPH0114200B2 (enExample)
JPH107491A (ja) 高純度銅単結晶及びその製造方法並びにその製造装置
CN101175873B (zh) 半导体单晶制造装置
Tyutyunnik et al. Lithium hydride single crystal growth by bridgman-stockbarger method using ultrasound
JP2001240497A (ja) フッ化物単結晶製造方法及び製造装置
JP2019163187A (ja) 鉄ガリウム合金の単結晶育成方法
CN118668284A (zh) 一种氧化镓晶体的多腔单晶生长装置
JP4399631B2 (ja) 化合物半導体単結晶の製造方法、及びその製造装置
JP4904862B2 (ja) 酸化アルミニウム単結晶の製造方法及び得られる酸化アルミニウム単結晶
WO2019053856A9 (ja) ヒ化ガリウム系化合物半導体結晶およびウエハ群
CN114959868A (zh) 一种主动气氛调节的晶体生长方法
EP0018111B1 (en) Method of producing ferrite single crystals
JP2021138592A (ja) ＦｅＧａ合金単結晶の製造方法および蓋
JP2017036180A (ja) １３族窒化物結晶の製造方法および１３族窒化物結晶の製造装置
JP2011502941A (ja) 略不溶性ガスの融液への溶け込みを防止することによりシリコン結晶におけるエアーポケットを低減させる方法
JPH02196082A (ja) シリコン単結晶の製造方法
JPH06122595A (ja) 酸化亜鉛単結晶の育成方法
JPH0218375A (ja) 半導体単結晶引上げ装置
JP2005200256A (ja) 金属フッ化物の精製方法、金属フッ化物多結晶および単結晶の製造方法および製造装置