JPH01125530U - - Google Patents

Info

Publication number
JPH01125530U
JPH01125530U JP6257288U JP6257288U JPH01125530U JP H01125530 U JPH01125530 U JP H01125530U JP 6257288 U JP6257288 U JP 6257288U JP 6257288 U JP6257288 U JP 6257288U JP H01125530 U JPH01125530 U JP H01125530U
Authority
JP
Japan
Prior art keywords
flat plate
electrode
reaction chamber
electrodes
cvd apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6257288U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0351971Y2 (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1988062572U priority Critical patent/JPH0351971Y2/ja
Publication of JPH01125530U publication Critical patent/JPH01125530U/ja
Application granted granted Critical
Publication of JPH0351971Y2 publication Critical patent/JPH0351971Y2/ja
Expired legal-status Critical Current

Links

JP1988062572U 1988-05-12 1988-05-12 Expired JPH0351971Y2 (enrdf_load_stackoverflow)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988062572U JPH0351971Y2 (enrdf_load_stackoverflow) 1988-05-12 1988-05-12

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988062572U JPH0351971Y2 (enrdf_load_stackoverflow) 1988-05-12 1988-05-12

Publications (2)

Publication Number Publication Date
JPH01125530U true JPH01125530U (enrdf_load_stackoverflow) 1989-08-28
JPH0351971Y2 JPH0351971Y2 (enrdf_load_stackoverflow) 1991-11-08

Family

ID=31288175

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988062572U Expired JPH0351971Y2 (enrdf_load_stackoverflow) 1988-05-12 1988-05-12

Country Status (1)

Country Link
JP (1) JPH0351971Y2 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002093716A (ja) * 2000-09-12 2002-03-29 Kobe Steel Ltd プラズマ表面処理装置

Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5265184A (en) * 1975-11-26 1977-05-30 Nippon Telegr & Teleph Corp <Ntt> Eqipment for simultaneous sputtering at both surface
US4116806A (en) * 1977-12-08 1978-09-26 Battelle Development Corporation Two-sided planar magnetron sputtering apparatus
JPS556410A (en) * 1978-06-26 1980-01-17 Hitachi Ltd Plasma gas phase reactor
JPS5527626A (en) * 1978-08-17 1980-02-27 Murata Manufacturing Co Electronic part magazine container
JPS5559727A (en) * 1978-10-27 1980-05-06 Hitachi Ltd Plasma deposition device
JPS5585673A (en) * 1978-12-20 1980-06-27 Advanced Coating Tech Cathode for sputtering
JPS5645761A (en) * 1979-09-25 1981-04-25 Mitsubishi Electric Corp Plasma reaction apparatus
JPS5664437A (en) * 1979-08-22 1981-06-01 Onera (Off Nat Aerospatiale) Method and device for chemically etching integrated circuit by dry process
JPS5681923A (en) * 1979-12-06 1981-07-04 Sumitomo Electric Ind Ltd Manufacture of thin film
EP0034706A2 (de) * 1980-02-08 1981-09-02 VEB Zentrum für Forschung und Technologie Mikroelektronik Verfahren und Vorrichtung zum Plasmaätzen oder zur Plasma CVD
JPS56114387A (en) * 1980-02-13 1981-09-08 Sanyo Electric Co Ltd Manufacture of photovoltaic force element
JPS5743413A (en) * 1980-05-19 1982-03-11 Energy Conversion Devices Inc Semiconductor element and method of producing same
JPS5767020A (en) * 1980-10-15 1982-04-23 Agency Of Ind Science & Technol Thin silicon film and its manufacture
JPS5778546A (en) * 1980-11-05 1982-05-17 Stanley Electric Co Ltd Production of photoconductive silicon layer
JPS5784137A (en) * 1980-11-14 1982-05-26 Matsushita Electric Ind Co Ltd Plasma chemical evaporation
JPS5789217A (en) * 1980-11-26 1982-06-03 Seiko Epson Corp Manufacturing device of semiconductor
JPS58174570A (ja) * 1982-03-29 1983-10-13 エナージー・コンバーション・デバイセス・インコーポレーテッド グロー放電法による膜形成装置

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5265184A (en) * 1975-11-26 1977-05-30 Nippon Telegr & Teleph Corp <Ntt> Eqipment for simultaneous sputtering at both surface
US4116806A (en) * 1977-12-08 1978-09-26 Battelle Development Corporation Two-sided planar magnetron sputtering apparatus
JPS556410A (en) * 1978-06-26 1980-01-17 Hitachi Ltd Plasma gas phase reactor
JPS5527626A (en) * 1978-08-17 1980-02-27 Murata Manufacturing Co Electronic part magazine container
JPS5559727A (en) * 1978-10-27 1980-05-06 Hitachi Ltd Plasma deposition device
JPS5585673A (en) * 1978-12-20 1980-06-27 Advanced Coating Tech Cathode for sputtering
JPS5664437A (en) * 1979-08-22 1981-06-01 Onera (Off Nat Aerospatiale) Method and device for chemically etching integrated circuit by dry process
JPS5645761A (en) * 1979-09-25 1981-04-25 Mitsubishi Electric Corp Plasma reaction apparatus
JPS5681923A (en) * 1979-12-06 1981-07-04 Sumitomo Electric Ind Ltd Manufacture of thin film
EP0034706A2 (de) * 1980-02-08 1981-09-02 VEB Zentrum für Forschung und Technologie Mikroelektronik Verfahren und Vorrichtung zum Plasmaätzen oder zur Plasma CVD
JPS56114387A (en) * 1980-02-13 1981-09-08 Sanyo Electric Co Ltd Manufacture of photovoltaic force element
JPS5743413A (en) * 1980-05-19 1982-03-11 Energy Conversion Devices Inc Semiconductor element and method of producing same
JPS5767020A (en) * 1980-10-15 1982-04-23 Agency Of Ind Science & Technol Thin silicon film and its manufacture
JPS5778546A (en) * 1980-11-05 1982-05-17 Stanley Electric Co Ltd Production of photoconductive silicon layer
JPS5784137A (en) * 1980-11-14 1982-05-26 Matsushita Electric Ind Co Ltd Plasma chemical evaporation
JPS5789217A (en) * 1980-11-26 1982-06-03 Seiko Epson Corp Manufacturing device of semiconductor
JPS58174570A (ja) * 1982-03-29 1983-10-13 エナージー・コンバーション・デバイセス・インコーポレーテッド グロー放電法による膜形成装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002093716A (ja) * 2000-09-12 2002-03-29 Kobe Steel Ltd プラズマ表面処理装置

Also Published As

Publication number Publication date
JPH0351971Y2 (enrdf_load_stackoverflow) 1991-11-08

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