JP7823568B2 - 芳香族化合物、有機半導体層、及び有機薄膜トランジスタ - Google Patents

芳香族化合物、有機半導体層、及び有機薄膜トランジスタ

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JP7823568B2
JP7823568B2 JP2022504462A JP2022504462A JP7823568B2 JP 7823568 B2 JP7823568 B2 JP 7823568B2 JP 2022504462 A JP2022504462 A JP 2022504462A JP 2022504462 A JP2022504462 A JP 2022504462A JP 7823568 B2 JP7823568 B2 JP 7823568B2
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JPWO2021177417A1 (cg-RX-API-DMAC7.html
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真人 宮下
真人 渡辺
慎也 奥
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Tosoh Corp
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D487/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00
    • C07D487/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00 in which the condensed system contains two hetero rings
    • C07D487/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D493/00—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
    • C07D493/02—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains two hetero rings
    • C07D493/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D513/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and sulfur atoms as the only ring hetero atoms, not provided for in groups C07D463/00, C07D477/00 or C07D499/00 - C07D507/00
    • C07D513/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and sulfur atoms as the only ring hetero atoms, not provided for in groups C07D463/00, C07D477/00 or C07D499/00 - C07D507/00 in which the condensed system contains two hetero rings
    • C07D513/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D517/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having selenium, tellurium, or halogen atoms as ring hetero atoms
    • C07D517/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having selenium, tellurium, or halogen atoms as ring hetero atoms in which the condensed system contains two hetero rings
    • C07D517/04—Ortho-condensed systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/653—Aromatic compounds comprising a hetero atom comprising only oxygen as heteroatom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Thin Film Transistor (AREA)
JP2022504462A 2020-03-04 2021-03-04 芳香族化合物、有機半導体層、及び有機薄膜トランジスタ Active JP7823568B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020036737 2020-03-04
JP2020036737 2020-03-04
PCT/JP2021/008511 WO2021177417A1 (ja) 2020-03-04 2021-03-04 芳香族化合物、有機半導体層、及び有機薄膜トランジスタ

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JP7823568B2 true JP7823568B2 (ja) 2026-03-04

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Country Link
US (1) US20230142592A1 (cg-RX-API-DMAC7.html)
EP (1) EP4116304A4 (cg-RX-API-DMAC7.html)
JP (1) JP7823568B2 (cg-RX-API-DMAC7.html)
KR (1) KR20220150316A (cg-RX-API-DMAC7.html)
CN (1) CN115210239B (cg-RX-API-DMAC7.html)
WO (1) WO2021177417A1 (cg-RX-API-DMAC7.html)

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JPWO2024162378A1 (cg-RX-API-DMAC7.html) 2023-02-01 2024-08-08
WO2026014358A1 (ja) * 2024-07-09 2026-01-15 東ソー株式会社 芳香族化合物、有機半導体層、及び有機薄膜トランジスタ

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011140829A1 (en) 2010-05-14 2011-11-17 The University Of Hong Kong Solid supported gold nanoparticles, methods of use thereof, and methods for making same
WO2013182847A1 (en) 2012-06-06 2013-12-12 The University Of Warwick Organic electron acceptor compounds
WO2015147130A1 (ja) 2014-03-26 2015-10-01 富士フイルム株式会社 非発光性有機半導体デバイス用塗布液、有機トランジスタ、化合物、非発光性有機半導体デバイス用有機半導体材料、有機トランジスタ用材料、有機トランジスタの製造方法および有機半導体膜の製造方法
WO2018181462A1 (ja) 2017-03-31 2018-10-04 東ソー株式会社 芳香族化合物、有機半導体層、及び有機薄膜トランジスタ

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KR101410150B1 (ko) * 2006-10-20 2014-06-19 니폰 가야꾸 가부시끼가이샤 전계 효과 트랜지스터
JP5284678B2 (ja) * 2008-04-25 2013-09-11 山本化成株式会社 有機トランジスタ
KR20120090939A (ko) * 2009-07-10 2012-08-17 고쿠리츠 다이가쿠 호우징 나고야 다이가쿠 치환된 벤조찰코게노아센 화합물, 그 화합물을 함유하는 박막 및 그 박막을 함유하는 유기 반도체 장치
KR20120127502A (ko) * 2010-09-07 2012-11-21 닛뽄 가야쿠 가부시키가이샤 유기 반도체 재료, 유기 반도체 조성물, 유기 박막 및 전계 효과 트랜지스터 그리고 그의 제조 방법
JP2012184196A (ja) * 2011-03-07 2012-09-27 Sumitomo Chemical Co Ltd 含ピロールヘテロアセン化合物、該化合物の製造方法、該化合物を含む薄膜及び該薄膜を含む有機半導体デバイス
JP6363732B2 (ja) * 2014-11-25 2018-07-25 富士フイルム株式会社 有機半導体素子及びその製造方法、有機半導体膜形成用組成物、化合物、並びに、有機半導体膜
JP2018008885A (ja) * 2016-07-11 2018-01-18 東ソー株式会社 ヘテロアセン誘導体、有機半導体層、及び有機薄膜トランジスタ
JP2018016551A (ja) * 2016-07-25 2018-02-01 東ソー株式会社 ヘテロアセン誘導体、有機半導体層、及び有機薄膜トランジスタ
JP7159586B2 (ja) 2017-03-31 2022-10-25 東ソー株式会社 芳香族化合物、有機半導体層、及び有機薄膜トランジスタ

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WO2011140829A1 (en) 2010-05-14 2011-11-17 The University Of Hong Kong Solid supported gold nanoparticles, methods of use thereof, and methods for making same
WO2013182847A1 (en) 2012-06-06 2013-12-12 The University Of Warwick Organic electron acceptor compounds
WO2015147130A1 (ja) 2014-03-26 2015-10-01 富士フイルム株式会社 非発光性有機半導体デバイス用塗布液、有機トランジスタ、化合物、非発光性有機半導体デバイス用有機半導体材料、有機トランジスタ用材料、有機トランジスタの製造方法および有機半導体膜の製造方法
WO2018181462A1 (ja) 2017-03-31 2018-10-04 東ソー株式会社 芳香族化合物、有機半導体層、及び有機薄膜トランジスタ

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BULA,R.P. et al.，Thermal Generation of Pentacenes from Soluble 6,13-Dihydro-6,13-ethenopentacene Precursors by a Diel，The Journal of Organic Chemistry，2012年，Vol.77, No.7，pp.3538-3542
Database REGISTRY，1984年，RN 56961-68-3, Retrieved from STN international [online] ;retrieved on 14 May 2021
MURGULY,E. et al.，Chiral Discrimination in Hydrogen-Bonded [7]Helicenes，Organic Letters，2000年，Vol.2, No.20，pp.3169-3172，DOI 10.1021/ol006366y

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Publication number Publication date
US20230142592A1 (en) 2023-05-11
WO2021177417A1 (ja) 2021-09-10
KR20220150316A (ko) 2022-11-10
EP4116304A1 (en) 2023-01-11
EP4116304A4 (en) 2024-03-13
CN115210239B (zh) 2025-04-11
CN115210239A (zh) 2022-10-18
JPWO2021177417A1 (cg-RX-API-DMAC7.html) 2021-09-10

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