CN115210239B - 芳香族化合物、有机半导体层和有机薄膜晶体管 - Google Patents

芳香族化合物、有机半导体层和有机薄膜晶体管 Download PDF

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CN115210239B
CN115210239B CN202180017812.5A CN202180017812A CN115210239B CN 115210239 B CN115210239 B CN 115210239B CN 202180017812 A CN202180017812 A CN 202180017812A CN 115210239 B CN115210239 B CN 115210239B
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CN115210239A (zh
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宫下真人
渡边真人
奥慎也
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Tosoh Corp
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    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D487/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00
    • C07D487/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00 in which the condensed system contains two hetero rings
    • C07D487/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D493/00—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
    • C07D493/02—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains two hetero rings
    • C07D493/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D513/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and sulfur atoms as the only ring hetero atoms, not provided for in groups C07D463/00, C07D477/00 or C07D499/00 - C07D507/00
    • C07D513/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and sulfur atoms as the only ring hetero atoms, not provided for in groups C07D463/00, C07D477/00 or C07D499/00 - C07D507/00 in which the condensed system contains two hetero rings
    • C07D513/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D517/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having selenium, tellurium, or halogen atoms as ring hetero atoms
    • C07D517/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having selenium, tellurium, or halogen atoms as ring hetero atoms in which the condensed system contains two hetero rings
    • C07D517/04—Ortho-condensed systems
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    • H10D30/00—Field-effect transistors [FET]
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    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
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    • H10K85/649—Aromatic compounds comprising a hetero atom
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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    • H10K85/649—Aromatic compounds comprising a hetero atom
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    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
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  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Thin Film Transistor (AREA)
CN202180017812.5A 2020-03-04 2021-03-04 芳香族化合物、有机半导体层和有机薄膜晶体管 Active CN115210239B (zh)

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JP2020-036737 2020-03-04
JP2020036737 2020-03-04
PCT/JP2021/008511 WO2021177417A1 (ja) 2020-03-04 2021-03-04 芳香族化合物、有機半導体層、及び有機薄膜トランジスタ

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EP (1) EP4116304A4 (cg-RX-API-DMAC7.html)
JP (1) JP7823568B2 (cg-RX-API-DMAC7.html)
KR (1) KR20220150316A (cg-RX-API-DMAC7.html)
CN (1) CN115210239B (cg-RX-API-DMAC7.html)
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JPWO2024162378A1 (cg-RX-API-DMAC7.html) 2023-02-01 2024-08-08
WO2026014358A1 (ja) * 2024-07-09 2026-01-15 東ソー株式会社 芳香族化合物、有機半導体層、及び有機薄膜トランジスタ

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011140829A1 (en) * 2010-05-14 2011-11-17 The University Of Hong Kong Solid supported gold nanoparticles, methods of use thereof, and methods for making same
WO2013182847A1 (en) * 2012-06-06 2013-12-12 The University Of Warwick Organic electron acceptor compounds
WO2015147130A1 (ja) * 2014-03-26 2015-10-01 富士フイルム株式会社 非発光性有機半導体デバイス用塗布液、有機トランジスタ、化合物、非発光性有機半導体デバイス用有機半導体材料、有機トランジスタ用材料、有機トランジスタの製造方法および有機半導体膜の製造方法
WO2018181462A1 (ja) * 2017-03-31 2018-10-04 東ソー株式会社 芳香族化合物、有機半導体層、及び有機薄膜トランジスタ
US10497881B2 (en) * 2014-11-25 2019-12-03 Fujifilm Corporation Organic semiconductor element, manufacturing method thereof, composition for forming organic semiconductor film, compound, and organic semiconductor film

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KR101410150B1 (ko) * 2006-10-20 2014-06-19 니폰 가야꾸 가부시끼가이샤 전계 효과 트랜지스터
JP5284678B2 (ja) * 2008-04-25 2013-09-11 山本化成株式会社 有機トランジスタ
KR20120090939A (ko) * 2009-07-10 2012-08-17 고쿠리츠 다이가쿠 호우징 나고야 다이가쿠 치환된 벤조찰코게노아센 화합물, 그 화합물을 함유하는 박막 및 그 박막을 함유하는 유기 반도체 장치
KR20120127502A (ko) * 2010-09-07 2012-11-21 닛뽄 가야쿠 가부시키가이샤 유기 반도체 재료, 유기 반도체 조성물, 유기 박막 및 전계 효과 트랜지스터 그리고 그의 제조 방법
JP2012184196A (ja) * 2011-03-07 2012-09-27 Sumitomo Chemical Co Ltd 含ピロールヘテロアセン化合物、該化合物の製造方法、該化合物を含む薄膜及び該薄膜を含む有機半導体デバイス
JP2018008885A (ja) * 2016-07-11 2018-01-18 東ソー株式会社 ヘテロアセン誘導体、有機半導体層、及び有機薄膜トランジスタ
JP2018016551A (ja) * 2016-07-25 2018-02-01 東ソー株式会社 ヘテロアセン誘導体、有機半導体層、及び有機薄膜トランジスタ
JP7159586B2 (ja) 2017-03-31 2022-10-25 東ソー株式会社 芳香族化合物、有機半導体層、及び有機薄膜トランジスタ

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WO2011140829A1 (en) * 2010-05-14 2011-11-17 The University Of Hong Kong Solid supported gold nanoparticles, methods of use thereof, and methods for making same
WO2013182847A1 (en) * 2012-06-06 2013-12-12 The University Of Warwick Organic electron acceptor compounds
WO2015147130A1 (ja) * 2014-03-26 2015-10-01 富士フイルム株式会社 非発光性有機半導体デバイス用塗布液、有機トランジスタ、化合物、非発光性有機半導体デバイス用有機半導体材料、有機トランジスタ用材料、有機トランジスタの製造方法および有機半導体膜の製造方法
US10497881B2 (en) * 2014-11-25 2019-12-03 Fujifilm Corporation Organic semiconductor element, manufacturing method thereof, composition for forming organic semiconductor film, compound, and organic semiconductor film
WO2018181462A1 (ja) * 2017-03-31 2018-10-04 東ソー株式会社 芳香族化合物、有機半導体層、及び有機薄膜トランジスタ

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US20230142592A1 (en) 2023-05-11
WO2021177417A1 (ja) 2021-09-10
KR20220150316A (ko) 2022-11-10
EP4116304A1 (en) 2023-01-11
EP4116304A4 (en) 2024-03-13
JP7823568B2 (ja) 2026-03-04
CN115210239A (zh) 2022-10-18
JPWO2021177417A1 (cg-RX-API-DMAC7.html) 2021-09-10

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