JP7801605B2 - 半導体光電極 - Google Patents

半導体光電極

Info

Publication number
JP7801605B2
JP7801605B2 JP2023561949A JP2023561949A JP7801605B2 JP 7801605 B2 JP7801605 B2 JP 7801605B2 JP 2023561949 A JP2023561949 A JP 2023561949A JP 2023561949 A JP2023561949 A JP 2023561949A JP 7801605 B2 JP7801605 B2 JP 7801605B2
Authority
JP
Japan
Prior art keywords
thin film
semiconductor
semiconductor thin
substrate
moth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023561949A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023089655A1 (https=
Inventor
裕也 渦巻
紗弓 里
晃洋 鴻野
武志 小松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
NTT Inc USA
Original Assignee
Nippon Telegraph and Telephone Corp
NTT Inc USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, NTT Inc USA filed Critical Nippon Telegraph and Telephone Corp
Publication of JPWO2023089655A1 publication Critical patent/JPWO2023089655A1/ja
Application granted granted Critical
Publication of JP7801605B2 publication Critical patent/JP7801605B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/02—Electrodes; Manufacture thereof not otherwise provided for characterised by shape or form
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B1/00—Electrolytic production of inorganic compounds or non-metals
    • C25B1/50—Processes
    • C25B1/55—Photoelectrolysis
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
    • C25B11/052—Electrodes comprising one or more electrocatalytic coatings on a substrate
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
    • C25B11/073—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material
    • C25B11/075—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material consisting of a single catalytic element or catalytic compound
    • C25B11/087—Photocatalytic compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Catalysts (AREA)
JP2023561949A 2021-11-16 2021-11-16 半導体光電極 Active JP7801605B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/042036 WO2023089655A1 (ja) 2021-11-16 2021-11-16 半導体光電極

Publications (2)

Publication Number Publication Date
JPWO2023089655A1 JPWO2023089655A1 (https=) 2023-05-25
JP7801605B2 true JP7801605B2 (ja) 2026-01-19

Family

ID=86396369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023561949A Active JP7801605B2 (ja) 2021-11-16 2021-11-16 半導体光電極

Country Status (3)

Country Link
US (1) US20250011952A1 (https=)
JP (1) JP7801605B2 (https=)
WO (1) WO2023089655A1 (https=)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004258364A (ja) 2003-02-26 2004-09-16 Seiko Epson Corp 光利用装置、表示体、発電体、および光利用装置の製造方法
WO2012033205A1 (ja) 2010-09-10 2012-03-15 三菱電機株式会社 太陽電池および太陽電池モジュール
JP2014123662A (ja) 2012-12-21 2014-07-03 Kyocera Corp 太陽電池および太陽電池モジュール
JP2017172033A (ja) 2016-03-18 2017-09-28 株式会社東芝 電気化学反応装置
JP2018207056A (ja) 2017-06-09 2018-12-27 パナソニックＩｐマネジメント株式会社 光電極及び光電気化学セル
JP2020090690A (ja) 2018-12-03 2020-06-11 日本電信電話株式会社 窒化物半導体光電極の製造方法
CN112663083A (zh) 2020-12-02 2021-04-16 华侨大学 一种提升水分解性能的集成薄膜光电极及其制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000252504A (ja) * 1999-03-04 2000-09-14 Kanegafuchi Chem Ind Co Ltd シリコン系薄膜光電変換装置およびその製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004258364A (ja) 2003-02-26 2004-09-16 Seiko Epson Corp 光利用装置、表示体、発電体、および光利用装置の製造方法
WO2012033205A1 (ja) 2010-09-10 2012-03-15 三菱電機株式会社 太陽電池および太陽電池モジュール
JP2014123662A (ja) 2012-12-21 2014-07-03 Kyocera Corp 太陽電池および太陽電池モジュール
JP2017172033A (ja) 2016-03-18 2017-09-28 株式会社東芝 電気化学反応装置
JP2018207056A (ja) 2017-06-09 2018-12-27 パナソニックＩｐマネジメント株式会社 光電極及び光電気化学セル
JP2020090690A (ja) 2018-12-03 2020-06-11 日本電信電話株式会社 窒化物半導体光電極の製造方法
CN112663083A (zh) 2020-12-02 2021-04-16 华侨大学 一种提升水分解性能的集成薄膜光电极及其制备方法

Also Published As

Publication number Publication date
JPWO2023089655A1 (https=) 2023-05-25
US20250011952A1 (en) 2025-01-09
WO2023089655A1 (ja) 2023-05-25

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