JP7799852B2 - 窒化珪素焼結体、耐摩耗性部材、半導体装置用基板、及び窒化珪素焼結体の製造方法 - Google Patents

窒化珪素焼結体、耐摩耗性部材、半導体装置用基板、及び窒化珪素焼結体の製造方法

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JP7799852B2
JP7799852B2 JP2024549924A JP2024549924A JP7799852B2 JP 7799852 B2 JP7799852 B2 JP 7799852B2 JP 2024549924 A JP2024549924 A JP 2024549924A JP 2024549924 A JP2024549924 A JP 2024549924A JP 7799852 B2 JP7799852 B2 JP 7799852B2
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silicon nitride
sintered body
nitride sintered
zirconium oxide
zirconium
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JPWO2024070470A1 (https=
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孝幸 深澤
克之 青木
直十 寶槻
栄人 山形
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Niterra Materials Co Ltd
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Toshiba Materials Co Ltd
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    • F16C2202/00Solid materials defined by their properties
    • F16C2202/30Electric properties; Magnetic properties
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16CSHAFTS; FLEXIBLE SHAFTS; ELEMENTS OR CRANKSHAFT MECHANISMS; ROTARY BODIES OTHER THAN GEARING ELEMENTS; BEARINGS
    • F16C2206/00Materials with ceramics, cermets, hard carbon or similar non-metallic hard materials as main constituents
    • F16C2206/40Ceramics, e.g. carbides, nitrides, oxides, borides of a metal
    • F16C2206/58Ceramics, e.g. carbides, nitrides, oxides, borides of a metal based on ceramic nitrides
    • F16C2206/60Silicon nitride (Si3N4)l

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JP2024549924A 2022-09-27 2023-08-31 窒化珪素焼結体、耐摩耗性部材、半導体装置用基板、及び窒化珪素焼結体の製造方法 Active JP7799852B2 (ja)

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JP2002284586A (ja) 2001-03-26 2002-10-03 Ngk Insulators Ltd 窒化珪素多孔体及びその製造方法
JP2008024579A (ja) 2006-03-31 2008-02-07 National Institute Of Advanced Industrial & Technology 反応焼結窒化ケイ素基複合材料及びその製造方法

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GB2010913B (en) * 1977-12-23 1982-06-23 Fiat Spa Process for sintering silicon nitride compacts
JPS59199582A (ja) * 1983-04-26 1984-11-12 三菱マテリアル株式会社 サイアロン基焼結材料の焼結法
JPH02296771A (ja) * 1989-05-11 1990-12-07 Isuzu Ceramics Kenkyusho:Kk 複合セラミックスとその製造方法
JPH0733532A (ja) * 1993-07-20 1995-02-03 Hitachi Ltd 繊維強化窒化珪素焼結体及びその製造法
JP5062402B2 (ja) 2007-03-30 2012-10-31 独立行政法人産業技術総合研究所 反応焼結窒化ケイ素基焼結体及びその製造方法
JP5811391B2 (ja) 2011-04-11 2015-11-11 日立金属株式会社 窒化珪素質セラミックス焼結体の製造方法および焼成容器
CN117998732A (zh) 2018-08-29 2024-05-07 株式会社东芝 氮化硅基板及氮化硅电路基板
EP3896300B1 (en) 2018-12-11 2025-12-17 Kabushiki Kaisha Toshiba Bearing ball, bearing, motor and driving device using same

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JP2002284586A (ja) 2001-03-26 2002-10-03 Ngk Insulators Ltd 窒化珪素多孔体及びその製造方法
JP2008024579A (ja) 2006-03-31 2008-02-07 National Institute Of Advanced Industrial & Technology 反応焼結窒化ケイ素基複合材料及びその製造方法

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