JP5527937B2 - 窒化珪素質焼結体 - Google Patents
窒化珪素質焼結体 Download PDFInfo
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- JP5527937B2 JP5527937B2 JP2008080822A JP2008080822A JP5527937B2 JP 5527937 B2 JP5527937 B2 JP 5527937B2 JP 2008080822 A JP2008080822 A JP 2008080822A JP 2008080822 A JP2008080822 A JP 2008080822A JP 5527937 B2 JP5527937 B2 JP 5527937B2
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- sintered body
- silicon nitride
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims description 63
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims description 57
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 20
- 239000011777 magnesium Substances 0.000 claims description 20
- 239000000395 magnesium oxide Substances 0.000 claims description 20
- 239000001301 oxygen Substances 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 20
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 19
- 229910052749 magnesium Inorganic materials 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 238000005245 sintering Methods 0.000 claims description 13
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 12
- 229910021476 group 6 element Inorganic materials 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 11
- 229910021332 silicide Inorganic materials 0.000 claims description 11
- 230000000737 periodic effect Effects 0.000 claims description 10
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 9
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- -1 aluminum compound Chemical class 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 150000002681 magnesium compounds Chemical class 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 239000000843 powder Substances 0.000 description 26
- 238000010304 firing Methods 0.000 description 25
- 238000005520 cutting process Methods 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000013078 crystal Substances 0.000 description 10
- 230000001965 increasing effect Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 239000012071 phase Substances 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 238000004453 electron probe microanalysis Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 3
- 239000000347 magnesium hydroxide Substances 0.000 description 3
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- YXEUGTSPQFTXTR-UHFFFAOYSA-K lanthanum(3+);trihydroxide Chemical compound [OH-].[OH-].[OH-].[La+3] YXEUGTSPQFTXTR-UHFFFAOYSA-K 0.000 description 2
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000011863 silicon-based powder Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 238000005211 surface analysis Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000002671 adjuvant Substances 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910021357 chromium silicide Inorganic materials 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- ZXGIFJXRQHZCGJ-UHFFFAOYSA-N erbium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Er+3].[Er+3] ZXGIFJXRQHZCGJ-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000001073 sample cooling Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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Description
O 2 )換算で0.1〜4.5質量%、周期表第6族元素珪化物を0〜2質量%の比率で含有する窒化珪素質焼結体であって、該窒化珪素質焼結体には、RE元素の含有比率は前記窒化珪素質焼結体の内部における含有比率に対して5%の範囲内であり、かつマグネシウム元素の含有比率は前記窒化珪素質焼結体の内部の含有比率に対して5%よりも少ない表面領域が表面を含んで存在し、かつ該表面領域における酸素元素の含有比率は前記窒化珪素質焼結体の内部における含有比率に対して15%の範囲内であることを特徴とする。
被切削材:FCD−450 ブロック材
切削速度:500m/分
送り量:0.2mm/rev
切り込み量:2.0mm
切削条件:乾式切削
評価項目:10パス加工後、切刃のフランク摩耗量とチッピング状態を顕微鏡観察により確認した。
結果は表3に示した。
Claims (4)
- 窒化珪素を主体として、RE元素化合物(ただし、REはイットリウムおよび希土類元素の少なくとも一種の元素)とマグネシウム化合物と酸素とを含み、全体組成が、窒化珪素を94.5〜99.5質量%、RE元素酸化物をRE 2 O 3 換算で0.1〜4.5質量%、酸化マグネシウムをMgO換算で0.3〜2.5質量%、酸化アルミニウムをAl 2 O 3 換算で0〜0.6質量%、残余の酸素をシリカ(SiO 2 )換算で0.1〜4.5質量%、周期表第6族元素珪化物を0〜2質量%の比率で含有する窒化珪素質焼結体であって、該窒化珪素質焼結体には、RE元素の含有比率は前記窒化珪素質焼結体の内部における含有比率に対して5%の範囲内であり、かつマグネシウム元素の含有比率は前記窒化珪素質焼結体の内部の含有比率に対して5%よりも少ない表面領域が表面を含んで存在し、かつ該表面領域における酸素元素の含有比率は前記窒化珪素質焼結体の内部における含有比率に対して15%の範囲内であることを特徴とする窒化珪素質焼結体。
- アルミニウム化合物をさらに含むとともに、前記表面領域におけるアルミニウム元素の含有比率は前記窒化珪素質焼結体の内部における含有比率に対して10%の範囲内であることを特徴とする請求項1記載の窒化珪素質焼結体。
- 前記表面におけるマグネシウム元素の含有比率が0.1〜1.0質量%であることを特徴とする請求項1または2記載の窒化珪素質焼結体。
- 前記表面領域は前記表面から100〜500μmの深さにわたって存在することを特徴とする請求項1乃至3のいずれか記載の窒化珪素質焼結体。
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US5921725A (en) * | 1996-03-13 | 1999-07-13 | Kashiwagi; Tetsuya | Sintered silicon nitride articles for tools and method of preparation |
JP2002012474A (ja) * | 2000-06-22 | 2002-01-15 | Ngk Spark Plug Co Ltd | 窒化珪素質焼結体及びそれを用いた切削工具 |
JP2009173508A (ja) * | 2007-02-23 | 2009-08-06 | Kyocera Corp | 窒化珪素質焼結体および切削工具ならびに切削加工装置、切削方法 |
CN101848782B (zh) * | 2008-03-26 | 2012-08-08 | 京瓷株式会社 | 切削工具 |
JP5527949B2 (ja) * | 2008-06-26 | 2014-06-25 | 京セラ株式会社 | 窒化珪素質焼結体 |
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2008
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US20090246464A1 (en) | 2009-10-01 |
US8496718B2 (en) | 2013-07-30 |
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