JP7771214B2 - 反射型フォトマスクブランク及び反射型フォトマスク - Google Patents

反射型フォトマスクブランク及び反射型フォトマスク

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Publication number
JP7771214B2
JP7771214B2 JP2023563685A JP2023563685A JP7771214B2 JP 7771214 B2 JP7771214 B2 JP 7771214B2 JP 2023563685 A JP2023563685 A JP 2023563685A JP 2023563685 A JP2023563685 A JP 2023563685A JP 7771214 B2 JP7771214 B2 JP 7771214B2
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JP
Japan
Prior art keywords
degrees
layer
phase difference
absorption layer
reflective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023563685A
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English (en)
Japanese (ja)
Other versions
JPWO2023095769A5 (https=
JPWO2023095769A1 (https=
Inventor
大輔 宮脇
和範 関
秀亮 中野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tekscend Photomask Corp
Original Assignee
Tekscend Photomask Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tekscend Photomask Corp filed Critical Tekscend Photomask Corp
Publication of JPWO2023095769A1 publication Critical patent/JPWO2023095769A1/ja
Publication of JPWO2023095769A5 publication Critical patent/JPWO2023095769A5/ja
Application granted granted Critical
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2023563685A 2021-11-24 2022-11-22 反射型フォトマスクブランク及び反射型フォトマスク Active JP7771214B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021190273 2021-11-24
JP2021190273 2021-11-24
PCT/JP2022/043116 WO2023095769A1 (ja) 2021-11-24 2022-11-22 反射型フォトマスクブランク及び反射型フォトマスク

Publications (3)

Publication Number Publication Date
JPWO2023095769A1 JPWO2023095769A1 (https=) 2023-06-01
JPWO2023095769A5 JPWO2023095769A5 (https=) 2024-06-13
JP7771214B2 true JP7771214B2 (ja) 2025-11-17

Family

ID=86539435

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023563685A Active JP7771214B2 (ja) 2021-11-24 2022-11-22 反射型フォトマスクブランク及び反射型フォトマスク

Country Status (6)

Country Link
EP (1) EP4439174A4 (https=)
JP (1) JP7771214B2 (https=)
KR (1) KR20240090667A (https=)
CN (1) CN118302719A (https=)
TW (1) TWI837962B (https=)
WO (1) WO2023095769A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7392236B1 (ja) * 2022-07-05 2023-12-06 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
WO2024009819A1 (ja) 2022-07-05 2024-01-11 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
JPWO2024029409A1 (https=) * 2022-08-03 2024-02-08
KR20250111513A (ko) * 2024-01-15 2025-07-22 주식회사 에스앤에스텍 위상반전막 패턴이 반사패턴으로 사용되는 리버스 포토마스크 및 이를 제작하기 위한 블랭크마스크
JP7681153B1 (ja) 2024-04-11 2025-05-21 テクセンドフォトマスク株式会社 反射型フォトマスクブランク、反射型フォトマスク及び反射型フォトマスクの製造方法
JP2026013178A (ja) * 2024-07-16 2026-01-28 信越化学工業株式会社 反射型フォトマスクブランク、及び反射型フォトマスクの製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019225737A1 (ja) 2018-05-25 2019-11-28 Hoya株式会社 反射型マスクブランク、反射型マスク、並びに反射型マスク及び半導体装置の製造方法
JP2020106639A (ja) 2018-12-27 2020-07-09 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
WO2021085382A1 (ja) 2019-10-29 2021-05-06 Ａｇｃ株式会社 反射型マスクブランクおよび反射型マスク
WO2021132111A1 (ja) 2019-12-27 2021-07-01 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法
WO2021230297A1 (ja) 2020-05-14 2021-11-18 凸版印刷株式会社 反射型マスクブランク及び反射型マスク

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH037360Y2 (https=) 1985-11-18 1991-02-22
WO2018159785A1 (ja) 2017-03-02 2018-09-07 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP2020034666A (ja) * 2018-08-29 2020-03-05 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
KR102285098B1 (ko) * 2019-07-12 2021-08-04 주식회사 에스앤에스텍 극자외선용 반사형 블랭크 마스크 및 그 제조방법
JP6929983B1 (ja) * 2020-03-10 2021-09-01 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体デバイスの製造方法
KR102898054B1 (ko) * 2020-04-14 2025-12-10 삼성전자주식회사 극자외선 리소그래피용 위상 반전 마스크

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019225737A1 (ja) 2018-05-25 2019-11-28 Hoya株式会社 反射型マスクブランク、反射型マスク、並びに反射型マスク及び半導体装置の製造方法
JP2020106639A (ja) 2018-12-27 2020-07-09 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
WO2021085382A1 (ja) 2019-10-29 2021-05-06 Ａｇｃ株式会社 反射型マスクブランクおよび反射型マスク
WO2021132111A1 (ja) 2019-12-27 2021-07-01 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法
WO2021230297A1 (ja) 2020-05-14 2021-11-18 凸版印刷株式会社 反射型マスクブランク及び反射型マスク

Also Published As

Publication number Publication date
KR20240090667A (ko) 2024-06-21
EP4439174A4 (en) 2025-11-26
TW202336519A (zh) 2023-09-16
EP4439174A1 (en) 2024-10-02
TWI837962B (zh) 2024-04-01
WO2023095769A1 (ja) 2023-06-01
JPWO2023095769A1 (https=) 2023-06-01
CN118302719A (zh) 2024-07-05

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