KR20240090667A - 반사형 포토마스크 블랭크 및 반사형 포토마스크 - Google Patents

반사형 포토마스크 블랭크 및 반사형 포토마스크 Download PDF

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Publication number
KR20240090667A
KR20240090667A KR1020247016802A KR20247016802A KR20240090667A KR 20240090667 A KR20240090667 A KR 20240090667A KR 1020247016802 A KR1020247016802 A KR 1020247016802A KR 20247016802 A KR20247016802 A KR 20247016802A KR 20240090667 A KR20240090667 A KR 20240090667A
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KR
South Korea
Prior art keywords
degrees
absorption layer
phase difference
layer
reflective
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Pending
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KR1020247016802A
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English (en)
Korean (ko)
Inventor
다이스케 미야와키
가즈노리 세키
히데아키 나카노
Original Assignee
가부시키가이샤 토판 포토마스크
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Publication of KR20240090667A publication Critical patent/KR20240090667A/ko
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020247016802A 2021-11-24 2022-11-22 반사형 포토마스크 블랭크 및 반사형 포토마스크 Pending KR20240090667A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021190273 2021-11-24
JPJP-P-2021-190273 2021-11-24
PCT/JP2022/043116 WO2023095769A1 (ja) 2021-11-24 2022-11-22 反射型フォトマスクブランク及び反射型フォトマスク

Publications (1)

Publication Number Publication Date
KR20240090667A true KR20240090667A (ko) 2024-06-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247016802A Pending KR20240090667A (ko) 2021-11-24 2022-11-22 반사형 포토마스크 블랭크 및 반사형 포토마스크

Country Status (6)

Country Link
EP (1) EP4439174A4 (https=)
JP (1) JP7771214B2 (https=)
KR (1) KR20240090667A (https=)
CN (1) CN118302719A (https=)
TW (1) TWI837962B (https=)
WO (1) WO2023095769A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7392236B1 (ja) * 2022-07-05 2023-12-06 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
WO2024009819A1 (ja) 2022-07-05 2024-01-11 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
JPWO2024029409A1 (https=) * 2022-08-03 2024-02-08
KR20250111513A (ko) * 2024-01-15 2025-07-22 주식회사 에스앤에스텍 위상반전막 패턴이 반사패턴으로 사용되는 리버스 포토마스크 및 이를 제작하기 위한 블랭크마스크
JP7681153B1 (ja) 2024-04-11 2025-05-21 テクセンドフォトマスク株式会社 反射型フォトマスクブランク、反射型フォトマスク及び反射型フォトマスクの製造方法
JP2026013178A (ja) * 2024-07-16 2026-01-28 信越化学工業株式会社 反射型フォトマスクブランク、及び反射型フォトマスクの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6287099U (https=) 1985-11-18 1987-06-03
WO2018159785A1 (ja) 2017-03-02 2018-09-07 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI811369B (zh) 2018-05-25 2023-08-11 日商Ｈｏｙａ股份有限公司 反射型光罩基底、反射型光罩、以及反射型光罩及半導體裝置之製造方法
JP2020034666A (ja) * 2018-08-29 2020-03-05 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP7250511B2 (ja) * 2018-12-27 2023-04-03 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
KR102285098B1 (ko) * 2019-07-12 2021-08-04 주식회사 에스앤에스텍 극자외선용 반사형 블랭크 마스크 및 그 제조방법
KR102946015B1 (ko) * 2019-10-29 2026-03-31 에이지씨 가부시키가이샤 반사형 마스크 블랭크 및 반사형 마스크
KR20220122614A (ko) 2019-12-27 2022-09-02 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크, euv 리소그래피용 반사형 마스크 및 그들의 제조 방법
JP6929983B1 (ja) * 2020-03-10 2021-09-01 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体デバイスの製造方法
KR102898054B1 (ko) * 2020-04-14 2025-12-10 삼성전자주식회사 극자외선 리소그래피용 위상 반전 마스크
JP7640231B2 (ja) 2020-05-14 2025-03-05 テクセンドフォトマスク株式会社 反射型マスクブランク及び反射型マスク

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6287099U (https=) 1985-11-18 1987-06-03
WO2018159785A1 (ja) 2017-03-02 2018-09-07 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法

Also Published As

Publication number Publication date
EP4439174A4 (en) 2025-11-26
TW202336519A (zh) 2023-09-16
EP4439174A1 (en) 2024-10-02
TWI837962B (zh) 2024-04-01
WO2023095769A1 (ja) 2023-06-01
JP7771214B2 (ja) 2025-11-17
JPWO2023095769A1 (https=) 2023-06-01
CN118302719A (zh) 2024-07-05

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