JP7756786B2 - 半導体装置及び半導体装置の製造方法 - Google Patents

半導体装置及び半導体装置の製造方法

Info

Publication number
JP7756786B2
JP7756786B2 JP2024506109A JP2024506109A JP7756786B2 JP 7756786 B2 JP7756786 B2 JP 7756786B2 JP 2024506109 A JP2024506109 A JP 2024506109A JP 2024506109 A JP2024506109 A JP 2024506109A JP 7756786 B2 JP7756786 B2 JP 7756786B2
Authority
JP
Japan
Prior art keywords
semiconductor element
semiconductor device
semiconductor
step portion
bonding material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2024506109A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023171505A1 (https=
JPWO2023171505A5 (https=
Inventor
隆行 山田
康平 薮田
隆一 石井
範之 別芝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of JPWO2023171505A1 publication Critical patent/JPWO2023171505A1/ja
Publication of JPWO2023171505A5 publication Critical patent/JPWO2023171505A5/ja
Application granted granted Critical
Publication of JP7756786B2 publication Critical patent/JP7756786B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/421Shapes or dispositions
    • H10W70/424Cross-sectional shapes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/127Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07331Connecting techniques
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Die Bonding (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
JP2024506109A 2022-03-11 2023-03-01 半導体装置及び半導体装置の製造方法 Active JP7756786B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022038352 2022-03-11
JP2022038352 2022-03-11
PCT/JP2023/007647 WO2023171505A1 (ja) 2022-03-11 2023-03-01 半導体装置及び半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPWO2023171505A1 JPWO2023171505A1 (https=) 2023-09-14
JPWO2023171505A5 JPWO2023171505A5 (https=) 2024-10-15
JP7756786B2 true JP7756786B2 (ja) 2025-10-20

Family

ID=87935277

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024506109A Active JP7756786B2 (ja) 2022-03-11 2023-03-01 半導体装置及び半導体装置の製造方法

Country Status (5)

Country Link
US (1) US20250149413A1 (https=)
JP (1) JP7756786B2 (https=)
CN (1) CN118830068A (https=)
DE (1) DE112023001343T5 (https=)
WO (1) WO2023171505A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2025182086A1 (https=) * 2024-03-01 2025-09-04

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009500841A (ja) 2005-07-08 2009-01-08 エヌエックスピー ビー ヴィ 半導体デバイス
JP2017108192A (ja) 2017-03-24 2017-06-15 三菱電機株式会社 半導体装置
JP2021150548A (ja) 2020-03-23 2021-09-27 富士電機株式会社 半導体製造装置及び半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5112972B2 (ja) * 2008-06-30 2013-01-09 オンセミコンダクター・トレーディング・リミテッド 半導体装置およびその製造方法
JP5745238B2 (ja) * 2010-07-30 2015-07-08 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置およびその製造方法
JP7351134B2 (ja) * 2019-08-08 2023-09-27 富士電機株式会社 半導体装置及び半導体装置の製造方法
JP7494521B2 (ja) 2020-03-30 2024-06-04 富士電機株式会社 半導体装置及び半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009500841A (ja) 2005-07-08 2009-01-08 エヌエックスピー ビー ヴィ 半導体デバイス
JP2017108192A (ja) 2017-03-24 2017-06-15 三菱電機株式会社 半導体装置
JP2021150548A (ja) 2020-03-23 2021-09-27 富士電機株式会社 半導体製造装置及び半導体装置の製造方法

Also Published As

Publication number Publication date
DE112023001343T5 (de) 2024-12-19
US20250149413A1 (en) 2025-05-08
JPWO2023171505A1 (https=) 2023-09-14
WO2023171505A1 (ja) 2023-09-14
CN118830068A (zh) 2024-10-22

Similar Documents

Publication Publication Date Title
US9087924B2 (en) Semiconductor device with resin mold
JP6076675B2 (ja) 半導体装置
CN101752326B (zh) 具有隔离的散热件的半导体芯片封装件及其制造方法
CN101529584B (zh) 半导体元件的安装结构体及半导体元件的安装方法
CN100437954C (zh) 制造半导体器件的方法
JP7413668B2 (ja) 半導体装置及びその製造方法
US12021043B2 (en) Semiconductor device and method for manufacturing semiconductor device
JP5819052B2 (ja) 半導体装置および半導体装置の製造方法
JP7037368B2 (ja) 半導体装置および半導体装置の製造方法
JP7756786B2 (ja) 半導体装置及び半導体装置の製造方法
JP2020145476A (ja) 半導体装置
JP5056105B2 (ja) 半導体装置およびその製造方法
WO2022196278A1 (ja) 半導体装置
JP7460051B2 (ja) 半導体装置
US9396971B2 (en) Semiconductor device and a manufacturing method thereof
JP7351134B2 (ja) 半導体装置及び半導体装置の製造方法
JP2022176744A (ja) 半導体装置および半導体装置の製造方法
CN113903673B (zh) 用于半导体模块装置的基板和用于制造基板的方法
JP4698658B2 (ja) 半導体チップ搭載用の絶縁基板
TWI690954B (zh) 電子模組、引線框以及電子模組的製造方法
WO2024116924A1 (ja) 半導体装置、および、半導体装置の製造方法
CN115763413A (zh) 引线框架一体型基板、半导体装置及它们的制造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240731

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240731

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250909

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20251007

R150 Certificate of patent or registration of utility model

Ref document number: 7756786

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150