JP7749815B2 - 基板処理装置、および基板処理方法 - Google Patents

基板処理装置、および基板処理方法

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Publication number
JP7749815B2
JP7749815B2 JP2024516174A JP2024516174A JP7749815B2 JP 7749815 B2 JP7749815 B2 JP 7749815B2 JP 2024516174 A JP2024516174 A JP 2024516174A JP 2024516174 A JP2024516174 A JP 2024516174A JP 7749815 B2 JP7749815 B2 JP 7749815B2
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JP
Japan
Prior art keywords
substrate
processing liquid
film
nozzle
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2024516174A
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English (en)
Japanese (ja)
Other versions
JPWO2023204017A1 (https=
Inventor
好友 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JPWO2023204017A1 publication Critical patent/JPWO2023204017A1/ja
Application granted granted Critical
Publication of JP7749815B2 publication Critical patent/JP7749815B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/54—Cleaning of wafer edges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
JP2024516174A 2022-04-18 2023-04-04 基板処理装置、および基板処理方法 Active JP7749815B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022068333 2022-04-18
JP2022068333 2022-04-18
PCT/JP2023/013963 WO2023204017A1 (ja) 2022-04-18 2023-04-04 基板処理装置、および基板処理方法

Publications (2)

Publication Number Publication Date
JPWO2023204017A1 JPWO2023204017A1 (https=) 2023-10-26
JP7749815B2 true JP7749815B2 (ja) 2025-10-06

Family

ID=88419829

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024516174A Active JP7749815B2 (ja) 2022-04-18 2023-04-04 基板処理装置、および基板処理方法

Country Status (6)

Country Link
US (1) US20250253166A1 (https=)
JP (1) JP7749815B2 (https=)
KR (1) KR20250006088A (https=)
CN (1) CN118985039A (https=)
TW (1) TW202422734A (https=)
WO (1) WO2023204017A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269178A (ja) 1999-03-15 2000-09-29 Nec Corp エッチング除去方法および装置と洗浄方法および装置
JP2001319910A (ja) 2000-05-08 2001-11-16 Tokyo Electron Ltd 液処理装置
JP2014063910A (ja) 2012-09-21 2014-04-10 Tokyo Electron Ltd 液処理方法、液処理装置及び液処理用記録媒体
JP2016139743A (ja) 2015-01-28 2016-08-04 東京エレクトロン株式会社 ウエットエッチング方法、基板液処理装置および記憶媒体
JP2019212804A (ja) 2018-06-06 2019-12-12 東京エレクトロン株式会社 塗布膜形成装置及び塗布膜形成装置の調整方法
JP2021141087A (ja) 2020-02-28 2021-09-16 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0878378A (ja) * 1994-09-08 1996-03-22 Toshiba Corp 半導体基板の表面処理方法
JP6541605B2 (ja) 2016-03-30 2019-07-10 東京エレクトロン株式会社 基板処理装置、及び基板処理装置の撮像方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269178A (ja) 1999-03-15 2000-09-29 Nec Corp エッチング除去方法および装置と洗浄方法および装置
JP2001319910A (ja) 2000-05-08 2001-11-16 Tokyo Electron Ltd 液処理装置
JP2014063910A (ja) 2012-09-21 2014-04-10 Tokyo Electron Ltd 液処理方法、液処理装置及び液処理用記録媒体
JP2016139743A (ja) 2015-01-28 2016-08-04 東京エレクトロン株式会社 ウエットエッチング方法、基板液処理装置および記憶媒体
JP2019212804A (ja) 2018-06-06 2019-12-12 東京エレクトロン株式会社 塗布膜形成装置及び塗布膜形成装置の調整方法
JP2021141087A (ja) 2020-02-28 2021-09-16 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Also Published As

Publication number Publication date
KR20250006088A (ko) 2025-01-10
US20250253166A1 (en) 2025-08-07
CN118985039A (zh) 2024-11-19
TW202422734A (zh) 2024-06-01
JPWO2023204017A1 (https=) 2023-10-26
WO2023204017A1 (ja) 2023-10-26

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