TW202422734A - 基板處理裝置及基板處理方法 - Google Patents

基板處理裝置及基板處理方法 Download PDF

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Publication number
TW202422734A
TW202422734A TW112113192A TW112113192A TW202422734A TW 202422734 A TW202422734 A TW 202422734A TW 112113192 A TW112113192 A TW 112113192A TW 112113192 A TW112113192 A TW 112113192A TW 202422734 A TW202422734 A TW 202422734A
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TW
Taiwan
Prior art keywords
substrate
processing liquid
film
nozzle
peripheral portion
Prior art date
Application number
TW112113192A
Other languages
English (en)
Chinese (zh)
Inventor
佐藤好友
Original Assignee
日商東京威力科創股份有限公司
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Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202422734A publication Critical patent/TW202422734A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/54—Cleaning of wafer edges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

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  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
TW112113192A 2022-04-18 2023-04-10 基板處理裝置及基板處理方法 TW202422734A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022068333 2022-04-18
JP2022-068333 2022-04-18

Publications (1)

Publication Number Publication Date
TW202422734A true TW202422734A (zh) 2024-06-01

Family

ID=88419829

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112113192A TW202422734A (zh) 2022-04-18 2023-04-10 基板處理裝置及基板處理方法

Country Status (6)

Country Link
US (1) US20250253166A1 (https=)
JP (1) JP7749815B2 (https=)
KR (1) KR20250006088A (https=)
CN (1) CN118985039A (https=)
TW (1) TW202422734A (https=)
WO (1) WO2023204017A1 (https=)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0878378A (ja) * 1994-09-08 1996-03-22 Toshiba Corp 半導体基板の表面処理方法
JP3395696B2 (ja) * 1999-03-15 2003-04-14 日本電気株式会社 ウェハ処理装置およびウェハ処理方法
JP2001319910A (ja) * 2000-05-08 2001-11-16 Tokyo Electron Ltd 液処理装置
JP5985943B2 (ja) * 2012-09-21 2016-09-06 東京エレクトロン株式会社 液処理方法、液処理装置及び液処理用記録媒体
JP6246749B2 (ja) * 2015-01-28 2017-12-13 東京エレクトロン株式会社 ウエットエッチング方法、基板液処理装置および記憶媒体
JP6541605B2 (ja) 2016-03-30 2019-07-10 東京エレクトロン株式会社 基板処理装置、及び基板処理装置の撮像方法
JP7052573B2 (ja) * 2018-06-06 2022-04-12 東京エレクトロン株式会社 塗布膜形成装置及び塗布膜形成装置の調整方法
JP2021141087A (ja) * 2020-02-28 2021-09-16 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Also Published As

Publication number Publication date
KR20250006088A (ko) 2025-01-10
JP7749815B2 (ja) 2025-10-06
US20250253166A1 (en) 2025-08-07
CN118985039A (zh) 2024-11-19
JPWO2023204017A1 (https=) 2023-10-26
WO2023204017A1 (ja) 2023-10-26

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