JPWO2023204017A1 - - Google Patents

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Publication number
JPWO2023204017A1
JPWO2023204017A1 JP2024516174A JP2024516174A JPWO2023204017A1 JP WO2023204017 A1 JPWO2023204017 A1 JP WO2023204017A1 JP 2024516174 A JP2024516174 A JP 2024516174A JP 2024516174 A JP2024516174 A JP 2024516174A JP WO2023204017 A1 JPWO2023204017 A1 JP WO2023204017A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2024516174A
Other languages
Japanese (ja)
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JP7749815B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023204017A1 publication Critical patent/JPWO2023204017A1/ja
Application granted granted Critical
Publication of JP7749815B2 publication Critical patent/JP7749815B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/54—Cleaning of wafer edges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
JP2024516174A 2022-04-18 2023-04-04 基板処理装置、および基板処理方法 Active JP7749815B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022068333 2022-04-18
JP2022068333 2022-04-18
PCT/JP2023/013963 WO2023204017A1 (ja) 2022-04-18 2023-04-04 基板処理装置、および基板処理方法

Publications (2)

Publication Number Publication Date
JPWO2023204017A1 true JPWO2023204017A1 (https=) 2023-10-26
JP7749815B2 JP7749815B2 (ja) 2025-10-06

Family

ID=88419829

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024516174A Active JP7749815B2 (ja) 2022-04-18 2023-04-04 基板処理装置、および基板処理方法

Country Status (6)

Country Link
US (1) US20250253166A1 (https=)
JP (1) JP7749815B2 (https=)
KR (1) KR20250006088A (https=)
CN (1) CN118985039A (https=)
TW (1) TW202422734A (https=)
WO (1) WO2023204017A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269178A (ja) * 1999-03-15 2000-09-29 Nec Corp エッチング除去方法および装置と洗浄方法および装置
JP2001319910A (ja) * 2000-05-08 2001-11-16 Tokyo Electron Ltd 液処理装置
JP2014063910A (ja) * 2012-09-21 2014-04-10 Tokyo Electron Ltd 液処理方法、液処理装置及び液処理用記録媒体
JP2016139743A (ja) * 2015-01-28 2016-08-04 東京エレクトロン株式会社 ウエットエッチング方法、基板液処理装置および記憶媒体
JP2019212804A (ja) * 2018-06-06 2019-12-12 東京エレクトロン株式会社 塗布膜形成装置及び塗布膜形成装置の調整方法
JP2021141087A (ja) * 2020-02-28 2021-09-16 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0878378A (ja) * 1994-09-08 1996-03-22 Toshiba Corp 半導体基板の表面処理方法
JP6541605B2 (ja) 2016-03-30 2019-07-10 東京エレクトロン株式会社 基板処理装置、及び基板処理装置の撮像方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269178A (ja) * 1999-03-15 2000-09-29 Nec Corp エッチング除去方法および装置と洗浄方法および装置
JP2001319910A (ja) * 2000-05-08 2001-11-16 Tokyo Electron Ltd 液処理装置
JP2014063910A (ja) * 2012-09-21 2014-04-10 Tokyo Electron Ltd 液処理方法、液処理装置及び液処理用記録媒体
JP2016139743A (ja) * 2015-01-28 2016-08-04 東京エレクトロン株式会社 ウエットエッチング方法、基板液処理装置および記憶媒体
JP2019212804A (ja) * 2018-06-06 2019-12-12 東京エレクトロン株式会社 塗布膜形成装置及び塗布膜形成装置の調整方法
JP2021141087A (ja) * 2020-02-28 2021-09-16 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Also Published As

Publication number Publication date
KR20250006088A (ko) 2025-01-10
JP7749815B2 (ja) 2025-10-06
US20250253166A1 (en) 2025-08-07
CN118985039A (zh) 2024-11-19
TW202422734A (zh) 2024-06-01
WO2023204017A1 (ja) 2023-10-26

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