JP7728516B2 - 画像表示装置の製造方法および画像表示装置 - Google Patents

画像表示装置の製造方法および画像表示装置

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Publication number
JP7728516B2
JP7728516B2 JP2022565334A JP2022565334A JP7728516B2 JP 7728516 B2 JP7728516 B2 JP 7728516B2 JP 2022565334 A JP2022565334 A JP 2022565334A JP 2022565334 A JP2022565334 A JP 2022565334A JP 7728516 B2 JP7728516 B2 JP 7728516B2
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Japan
Prior art keywords
light
layer
image display
display device
insulating film
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Active
Application number
JP2022565334A
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English (en)
Japanese (ja)
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JPWO2022113949A1 (https=
Inventor
肇 秋元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
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Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of JPWO2022113949A1 publication Critical patent/JPWO2022113949A1/ja
Application granted granted Critical
Publication of JP7728516B2 publication Critical patent/JP7728516B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
JP2022565334A 2020-11-25 2021-11-22 画像表示装置の製造方法および画像表示装置 Active JP7728516B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020195353 2020-11-25
JP2020195353 2020-11-25
PCT/JP2021/042841 WO2022113949A1 (ja) 2020-11-25 2021-11-22 画像表示装置の製造方法および画像表示装置

Publications (2)

Publication Number Publication Date
JPWO2022113949A1 JPWO2022113949A1 (https=) 2022-06-02
JP7728516B2 true JP7728516B2 (ja) 2025-08-25

Family

ID=81754585

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022565334A Active JP7728516B2 (ja) 2020-11-25 2021-11-22 画像表示装置の製造方法および画像表示装置

Country Status (5)

Country Link
US (1) US12477886B2 (https=)
JP (1) JP7728516B2 (https=)
CN (1) CN116235305B (https=)
TW (1) TWI898085B (https=)
WO (1) WO2022113949A1 (https=)

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US12074146B2 (en) * 2021-12-03 2024-08-27 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display panel and manufacturing method thereof
WO2024048394A1 (ja) * 2022-09-01 2024-03-07 株式会社ジャパンディスプレイ 積層構造体、積層構造体の製造方法、及び半導体デバイス

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US20180294311A1 (en) 2017-04-06 2018-10-11 Acer Incorporated Display devices and methods of manufacturing the same
JP2018180436A (ja) 2017-04-20 2018-11-15 株式会社半導体エネルギー研究所 表示装置
JP2018205741A (ja) 2017-06-05 2018-12-27 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． ディスプレイ装置、電子機器、発光素子
WO2020226044A1 (ja) 2019-05-08 2020-11-12 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置

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JP4613373B2 (ja) 1999-07-19 2011-01-19 ソニー株式会社 Ｉｉｉ族ナイトライド化合物半導体薄膜の形成方法および半導体素子の製造方法
JP2002141492A (ja) 2000-10-31 2002-05-17 Canon Inc 発光ダイオードディスプレイパネル及びその製造方法
JP4319078B2 (ja) * 2004-03-26 2009-08-26 シャープ株式会社 半導体装置の製造方法
JP2008021745A (ja) 2006-07-11 2008-01-31 Showa Denko Kk Ｉｉｉ族窒化物化合物半導体積層構造体およびその成長方法
US8941141B2 (en) * 2006-10-17 2015-01-27 Epistar Corporation Light-emitting device
JP5935643B2 (ja) * 2012-10-10 2016-06-15 サンケン電気株式会社 半導体発光装置
JP6612119B2 (ja) * 2015-02-16 2019-11-27 株式会社東芝 半導体発光装置
WO2017150502A1 (ja) * 2016-03-04 2017-09-08 シャープ株式会社 薄膜トランジスタ基板及び表示パネル
EP3913680B1 (fr) 2016-05-13 2025-07-23 Commissariat à l'Energie Atomique et aux Energies Alternatives Procédé de fabrication d'un dispositif optoélectronique comportant une pluralité de diodes au nitrure de gallium
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KR102651097B1 (ko) * 2016-10-28 2024-03-22 엘지디스플레이 주식회사 발광 다이오드 디스플레이 장치
KR102490188B1 (ko) * 2016-11-09 2023-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 표시 모듈, 전자 기기, 및 표시 장치의 제작 방법
US10877181B2 (en) 2016-11-11 2020-12-29 AGC Inc. Substrate with low-reflection property and manufacturing method thereof
JP6773528B2 (ja) * 2016-11-15 2020-10-21 株式会社ジャパンディスプレイ 感圧センサ及び感圧センサ付表示装置
KR102734610B1 (ko) * 2016-12-30 2024-11-25 엘지디스플레이 주식회사 액정 표시 장치
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KR102503168B1 (ko) * 2018-02-08 2023-02-27 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
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CN110277421B (zh) * 2018-03-16 2021-10-29 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
JP7289294B2 (ja) * 2018-05-18 2023-06-09 株式会社半導体エネルギー研究所 表示装置、表示モジュール、電子機器、及び、表示装置の作製方法
WO2020188851A1 (ja) * 2019-03-15 2020-09-24 三菱電機株式会社 Ｌｅｄディスプレイ
CN113994485B (zh) * 2019-05-10 2026-03-24 日亚化学工业株式会社 图像显示装置的制造方法以及图像显示装置
CN110459557B (zh) 2019-08-16 2022-06-24 京东方科技集团股份有限公司 芯片晶圆及其制备方法、Micro-LED显示器
WO2021065918A1 (ja) * 2019-10-01 2021-04-08 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
EP4216290A4 (en) * 2020-09-17 2024-10-23 Nichia Corporation Production method for image display device and image display device
JP7820654B2 (ja) * 2021-03-30 2026-02-26 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置

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Publication number Priority date Publication date Assignee Title
JP2015015321A (ja) 2013-07-03 2015-01-22 高槻電器工業株式会社 半導体発光素子及びその製造方法
US20180294311A1 (en) 2017-04-06 2018-10-11 Acer Incorporated Display devices and methods of manufacturing the same
JP2018180436A (ja) 2017-04-20 2018-11-15 株式会社半導体エネルギー研究所 表示装置
JP2018205741A (ja) 2017-06-05 2018-12-27 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． ディスプレイ装置、電子機器、発光素子
WO2020226044A1 (ja) 2019-05-08 2020-11-12 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置

Also Published As

Publication number Publication date
TW202228280A (zh) 2022-07-16
US20230290808A1 (en) 2023-09-14
JPWO2022113949A1 (https=) 2022-06-02
CN116235305B (zh) 2026-03-06
WO2022113949A1 (ja) 2022-06-02
US12477886B2 (en) 2025-11-18
TWI898085B (zh) 2025-09-21
CN116235305A (zh) 2023-06-06

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