JP7727792B2 - プラズマ処理システム及びエッジリングの交換方法 - Google Patents

プラズマ処理システム及びエッジリングの交換方法

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Publication number
JP7727792B2
JP7727792B2 JP2024081043A JP2024081043A JP7727792B2 JP 7727792 B2 JP7727792 B2 JP 7727792B2 JP 2024081043 A JP2024081043 A JP 2024081043A JP 2024081043 A JP2024081043 A JP 2024081043A JP 7727792 B2 JP7727792 B2 JP 7727792B2
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JP
Japan
Prior art keywords
ring
edge ring
plasma processing
electrostatic chuck
processing system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2024081043A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024105634A (ja
JP2024105634A5 (https=
Inventor
伸 松浦
健一 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2020178354A external-priority patent/JP7550603B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JP2024105634A publication Critical patent/JP2024105634A/ja
Publication of JP2024105634A5 publication Critical patent/JP2024105634A5/ja
Application granted granted Critical
Publication of JP7727792B2 publication Critical patent/JP7727792B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32807—Construction (includes replacing parts of the apparatus)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
JP2024081043A 2020-03-03 2024-05-17 プラズマ処理システム及びエッジリングの交換方法 Active JP7727792B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020035948 2020-03-03
JP2020035948 2020-03-03
JP2020178354A JP7550603B2 (ja) 2020-03-03 2020-10-23 プラズマ処理システム及びエッジリングの交換方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2020178354A Division JP7550603B2 (ja) 2020-03-03 2020-10-23 プラズマ処理システム及びエッジリングの交換方法

Publications (3)

Publication Number Publication Date
JP2024105634A JP2024105634A (ja) 2024-08-06
JP2024105634A5 JP2024105634A5 (https=) 2024-10-08
JP7727792B2 true JP7727792B2 (ja) 2025-08-21

Family

ID=77467842

Family Applications (1)

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JP2024081043A Active JP7727792B2 (ja) 2020-03-03 2024-05-17 プラズマ処理システム及びエッジリングの交換方法

Country Status (4)

Country Link
US (2) US11901163B2 (https=)
JP (1) JP7727792B2 (https=)
CN (2) CN113345786B (https=)
TW (2) TWI871434B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7134104B2 (ja) * 2019-01-09 2022-09-09 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置の載置台
TWI871434B (zh) * 2020-03-03 2025-02-01 日商東京威力科創股份有限公司 電漿處理系統及邊緣環的更換方法
TW202531381A (zh) * 2020-03-03 2025-08-01 日商東京威力科創股份有限公司 基板支持台、電漿處理系統及環狀構件之安裝方法
CN115440558A (zh) * 2021-06-03 2022-12-06 长鑫存储技术有限公司 半导体蚀刻设备
WO2023021372A1 (en) * 2021-08-16 2023-02-23 AddOn Optics Ltd. Apparatus and methods for applying vacuum-plasma treatment
US20250361614A1 (en) * 2024-05-21 2025-11-27 Applied Materials, Inc. Increased life substrate support assembly

Citations (7)

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WO2013108750A1 (ja) 2012-01-17 2013-07-25 東京エレクトロン株式会社 基板載置台及びプラズマ処理装置
US20160211166A1 (en) 2015-01-16 2016-07-21 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
JP2018160666A (ja) 2017-03-22 2018-10-11 東京エレクトロン株式会社 基板処理装置
JP2019505088A (ja) 2016-01-26 2019-02-21 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ウェハエッジリングの持ち上げに関する解決
JP2019114790A (ja) 2017-12-21 2019-07-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 移動可能及び取り外し可能なプロセスキット
WO2020036613A1 (en) 2018-08-13 2020-02-20 Lam Research Corporation Replaceable and/or collapsible edge ring assemblies for plasma sheath tuning incorporating edge ring positioning and centering features
CN111081519A (zh) 2018-10-18 2020-04-28 细美事有限公司 基板处理装置

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JP2001230239A (ja) * 2000-02-15 2001-08-24 Tokyo Electron Ltd 処理装置及び処理方法
JP4104111B2 (ja) * 2002-01-29 2008-06-18 東京エレクトロン株式会社 被処理体の載置台及び被処理体の吸着方法
JP4687534B2 (ja) 2005-09-30 2011-05-25 東京エレクトロン株式会社 基板の載置機構及び基板処理装置
JP5650935B2 (ja) * 2009-08-07 2015-01-07 東京エレクトロン株式会社 基板処理装置及び位置決め方法並びにフォーカスリング配置方法
JP5584517B2 (ja) * 2010-05-12 2014-09-03 東京エレクトロン株式会社 プラズマ処理装置及び半導体装置の製造方法
JP6003011B2 (ja) * 2011-03-31 2016-10-05 東京エレクトロン株式会社 基板処理装置
JP5948026B2 (ja) * 2011-08-17 2016-07-06 東京エレクトロン株式会社 半導体製造装置及び処理方法
JP6285620B2 (ja) 2011-08-26 2018-02-28 新光電気工業株式会社 静電チャック及び半導体・液晶製造装置
JP2016046451A (ja) * 2014-08-26 2016-04-04 株式会社アルバック 基板処理装置及び基板処理方法
US20170263478A1 (en) * 2015-01-16 2017-09-14 Lam Research Corporation Detection System for Tunable/Replaceable Edge Coupling Ring
US9881820B2 (en) * 2015-10-22 2018-01-30 Lam Research Corporation Front opening ring pod
US10062599B2 (en) * 2015-10-22 2018-08-28 Lam Research Corporation Automated replacement of consumable parts using interfacing chambers
CN108369922B (zh) * 2016-01-26 2023-03-21 应用材料公司 晶片边缘环升降解决方案
JP6812264B2 (ja) * 2017-02-16 2021-01-13 東京エレクトロン株式会社 真空処理装置、及びメンテナンス装置
JP7110020B2 (ja) 2018-07-24 2022-08-01 キオクシア株式会社 基板支持装置およびプラズマ処理装置
US20220328290A1 (en) * 2019-08-14 2022-10-13 Lam Research Coporation Moveable edge rings for substrate processing systems
JP2021040011A (ja) * 2019-09-02 2021-03-11 キオクシア株式会社 プラズマ処理装置
TWI871434B (zh) * 2020-03-03 2025-02-01 日商東京威力科創股份有限公司 電漿處理系統及邊緣環的更換方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013108750A1 (ja) 2012-01-17 2013-07-25 東京エレクトロン株式会社 基板載置台及びプラズマ処理装置
US20160211166A1 (en) 2015-01-16 2016-07-21 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
JP2019505088A (ja) 2016-01-26 2019-02-21 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ウェハエッジリングの持ち上げに関する解決
JP2018160666A (ja) 2017-03-22 2018-10-11 東京エレクトロン株式会社 基板処理装置
JP2019114790A (ja) 2017-12-21 2019-07-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 移動可能及び取り外し可能なプロセスキット
WO2020036613A1 (en) 2018-08-13 2020-02-20 Lam Research Corporation Replaceable and/or collapsible edge ring assemblies for plasma sheath tuning incorporating edge ring positioning and centering features
CN111081519A (zh) 2018-10-18 2020-04-28 细美事有限公司 基板处理装置

Also Published As

Publication number Publication date
CN113345786B (zh) 2025-10-03
JP2024105634A (ja) 2024-08-06
TWI871434B (zh) 2025-02-01
US12394605B2 (en) 2025-08-19
CN121260718A (zh) 2026-01-02
US20210280395A1 (en) 2021-09-09
TW202137325A (zh) 2021-10-01
TW202516684A (zh) 2025-04-16
US20240136158A1 (en) 2024-04-25
US11901163B2 (en) 2024-02-13
US20240234102A9 (en) 2024-07-11
CN113345786A (zh) 2021-09-03

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