JP7715923B2 - プラズマ処理方法 - Google Patents

プラズマ処理方法

Info

Publication number
JP7715923B2
JP7715923B2 JP2024505023A JP2024505023A JP7715923B2 JP 7715923 B2 JP7715923 B2 JP 7715923B2 JP 2024505023 A JP2024505023 A JP 2024505023A JP 2024505023 A JP2024505023 A JP 2024505023A JP 7715923 B2 JP7715923 B2 JP 7715923B2
Authority
JP
Japan
Prior art keywords
region
plasma processing
processing method
gas
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2024505023A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024127535A1 (https=
Inventor
侑亮 中谷
靖 園田
基裕 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Publication of JPWO2024127535A1 publication Critical patent/JPWO2024127535A1/ja
Application granted granted Critical
Publication of JP7715923B2 publication Critical patent/JP7715923B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2024505023A 2022-12-13 2022-12-13 プラズマ処理方法 Active JP7715923B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/045949 WO2024127535A1 (ja) 2022-12-13 2022-12-13 プラズマ処理方法

Publications (2)

Publication Number Publication Date
JPWO2024127535A1 JPWO2024127535A1 (https=) 2024-06-20
JP7715923B2 true JP7715923B2 (ja) 2025-07-30

Family

ID=91484512

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024505023A Active JP7715923B2 (ja) 2022-12-13 2022-12-13 プラズマ処理方法

Country Status (6)

Country Link
US (1) US20250299928A1 (https=)
JP (1) JP7715923B2 (https=)
KR (1) KR102931431B1 (https=)
CN (1) CN118489149A (https=)
TW (1) TWI905588B (https=)
WO (1) WO2024127535A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014229751A (ja) 2013-05-22 2014-12-08 株式会社日立ハイテクノロジーズ プラズマ処理装置および処理方法
JP2019176184A (ja) 2015-05-22 2019-10-10 株式会社日立ハイテクノロジーズ プラズマ処理装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2945034B2 (ja) 1989-09-06 1999-09-06 株式会社東芝 ドライエッチング方法
JPH04137532A (ja) * 1990-04-23 1992-05-12 Toshiba Corp 表面処理方法及びその装置
JPH05136089A (ja) * 1991-03-12 1993-06-01 Hitachi Ltd マイクロ波プラズマエツチング装置及びエツチング方法
TW297919B (https=) * 1995-03-06 1997-02-11 Motorola Inc
US6503845B1 (en) 2001-05-01 2003-01-07 Applied Materials Inc. Method of etching a tantalum nitride layer in a high density plasma
JP6228860B2 (ja) 2014-02-12 2017-11-08 株式会社日立ハイテクノロジーズ 半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014229751A (ja) 2013-05-22 2014-12-08 株式会社日立ハイテクノロジーズ プラズマ処理装置および処理方法
JP2019176184A (ja) 2015-05-22 2019-10-10 株式会社日立ハイテクノロジーズ プラズマ処理装置

Also Published As

Publication number Publication date
TW202425129A (zh) 2024-06-16
CN118489149A (zh) 2024-08-13
KR20240095152A (ko) 2024-06-25
JPWO2024127535A1 (https=) 2024-06-20
US20250299928A1 (en) 2025-09-25
WO2024127535A1 (ja) 2024-06-20
KR102931431B1 (ko) 2026-02-26
TWI905588B (zh) 2025-11-21

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