JPWO2024127535A1 - - Google Patents
Info
- Publication number
- JPWO2024127535A1 JPWO2024127535A1 JP2024505023A JP2024505023A JPWO2024127535A1 JP WO2024127535 A1 JPWO2024127535 A1 JP WO2024127535A1 JP 2024505023 A JP2024505023 A JP 2024505023A JP 2024505023 A JP2024505023 A JP 2024505023A JP WO2024127535 A1 JPWO2024127535 A1 JP WO2024127535A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0421—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/045949 WO2024127535A1 (ja) | 2022-12-13 | 2022-12-13 | プラズマ処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024127535A1 true JPWO2024127535A1 (https=) | 2024-06-20 |
| JP7715923B2 JP7715923B2 (ja) | 2025-07-30 |
Family
ID=91484512
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024505023A Active JP7715923B2 (ja) | 2022-12-13 | 2022-12-13 | プラズマ処理方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20250299928A1 (https=) |
| JP (1) | JP7715923B2 (https=) |
| KR (1) | KR102931431B1 (https=) |
| CN (1) | CN118489149A (https=) |
| TW (1) | TWI905588B (https=) |
| WO (1) | WO2024127535A1 (https=) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04137532A (ja) * | 1990-04-23 | 1992-05-12 | Toshiba Corp | 表面処理方法及びその装置 |
| JPH05136089A (ja) * | 1991-03-12 | 1993-06-01 | Hitachi Ltd | マイクロ波プラズマエツチング装置及びエツチング方法 |
| JPH08250485A (ja) * | 1995-03-06 | 1996-09-27 | Motorola Inc | シリコンにテーパ状開口を形成する方法 |
| JP2014229751A (ja) * | 2013-05-22 | 2014-12-08 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置および処理方法 |
| JP2019176184A (ja) * | 2015-05-22 | 2019-10-10 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2945034B2 (ja) | 1989-09-06 | 1999-09-06 | 株式会社東芝 | ドライエッチング方法 |
| US6503845B1 (en) | 2001-05-01 | 2003-01-07 | Applied Materials Inc. | Method of etching a tantalum nitride layer in a high density plasma |
| JP6228860B2 (ja) | 2014-02-12 | 2017-11-08 | 株式会社日立ハイテクノロジーズ | 半導体装置の製造方法 |
-
2022
- 2022-12-13 CN CN202280051776.9A patent/CN118489149A/zh active Pending
- 2022-12-13 US US18/691,760 patent/US20250299928A1/en active Pending
- 2022-12-13 KR KR1020247002377A patent/KR102931431B1/ko active Active
- 2022-12-13 WO PCT/JP2022/045949 patent/WO2024127535A1/ja not_active Ceased
- 2022-12-13 JP JP2024505023A patent/JP7715923B2/ja active Active
-
2023
- 2023-12-08 TW TW112147890A patent/TWI905588B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04137532A (ja) * | 1990-04-23 | 1992-05-12 | Toshiba Corp | 表面処理方法及びその装置 |
| JPH05136089A (ja) * | 1991-03-12 | 1993-06-01 | Hitachi Ltd | マイクロ波プラズマエツチング装置及びエツチング方法 |
| JPH08250485A (ja) * | 1995-03-06 | 1996-09-27 | Motorola Inc | シリコンにテーパ状開口を形成する方法 |
| JP2014229751A (ja) * | 2013-05-22 | 2014-12-08 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置および処理方法 |
| JP2019176184A (ja) * | 2015-05-22 | 2019-10-10 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202425129A (zh) | 2024-06-16 |
| CN118489149A (zh) | 2024-08-13 |
| KR20240095152A (ko) | 2024-06-25 |
| JP7715923B2 (ja) | 2025-07-30 |
| US20250299928A1 (en) | 2025-09-25 |
| WO2024127535A1 (ja) | 2024-06-20 |
| KR102931431B1 (ko) | 2026-02-26 |
| TWI905588B (zh) | 2025-11-21 |
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