KR102931431B1 - 플라스마 처리 방법 - Google Patents

플라스마 처리 방법

Info

Publication number
KR102931431B1
KR102931431B1 KR1020247002377A KR20247002377A KR102931431B1 KR 102931431 B1 KR102931431 B1 KR 102931431B1 KR 1020247002377 A KR1020247002377 A KR 1020247002377A KR 20247002377 A KR20247002377 A KR 20247002377A KR 102931431 B1 KR102931431 B1 KR 102931431B1
Authority
KR
South Korea
Prior art keywords
region
gas
etching
shielding plate
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020247002377A
Other languages
English (en)
Korean (ko)
Other versions
KR20240095152A (ko
Inventor
유스케 나카타니
야스시 소노다
모토히로 다나카
Original Assignee
주식회사 히타치하이테크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 히타치하이테크 filed Critical 주식회사 히타치하이테크
Publication of KR20240095152A publication Critical patent/KR20240095152A/ko
Application granted granted Critical
Publication of KR102931431B1 publication Critical patent/KR102931431B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020247002377A 2022-12-13 2022-12-13 플라스마 처리 방법 Active KR102931431B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/045949 WO2024127535A1 (ja) 2022-12-13 2022-12-13 プラズマ処理方法

Publications (2)

Publication Number Publication Date
KR20240095152A KR20240095152A (ko) 2024-06-25
KR102931431B1 true KR102931431B1 (ko) 2026-02-26

Family

ID=91484512

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247002377A Active KR102931431B1 (ko) 2022-12-13 2022-12-13 플라스마 처리 방법

Country Status (6)

Country Link
US (1) US20250299928A1 (https=)
JP (1) JP7715923B2 (https=)
KR (1) KR102931431B1 (https=)
CN (1) CN118489149A (https=)
TW (1) TWI905588B (https=)
WO (1) WO2024127535A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020195416A1 (en) 2001-05-01 2002-12-26 Applied Materials, Inc. Method of etching a tantalum nitride layer in a high density plasma
JP2014229751A (ja) * 2013-05-22 2014-12-08 株式会社日立ハイテクノロジーズ プラズマ処理装置および処理方法
JP2019176184A (ja) * 2015-05-22 2019-10-10 株式会社日立ハイテクノロジーズ プラズマ処理装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2945034B2 (ja) 1989-09-06 1999-09-06 株式会社東芝 ドライエッチング方法
JPH04137532A (ja) * 1990-04-23 1992-05-12 Toshiba Corp 表面処理方法及びその装置
JPH05136089A (ja) * 1991-03-12 1993-06-01 Hitachi Ltd マイクロ波プラズマエツチング装置及びエツチング方法
TW297919B (https=) * 1995-03-06 1997-02-11 Motorola Inc
JP6228860B2 (ja) 2014-02-12 2017-11-08 株式会社日立ハイテクノロジーズ 半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020195416A1 (en) 2001-05-01 2002-12-26 Applied Materials, Inc. Method of etching a tantalum nitride layer in a high density plasma
JP2014229751A (ja) * 2013-05-22 2014-12-08 株式会社日立ハイテクノロジーズ プラズマ処理装置および処理方法
JP2019176184A (ja) * 2015-05-22 2019-10-10 株式会社日立ハイテクノロジーズ プラズマ処理装置

Also Published As

Publication number Publication date
TW202425129A (zh) 2024-06-16
CN118489149A (zh) 2024-08-13
KR20240095152A (ko) 2024-06-25
JPWO2024127535A1 (https=) 2024-06-20
JP7715923B2 (ja) 2025-07-30
US20250299928A1 (en) 2025-09-25
WO2024127535A1 (ja) 2024-06-20
TWI905588B (zh) 2025-11-21

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