JP7713449B2 - 半導体レーザ装置 - Google Patents

半導体レーザ装置

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Publication number
JP7713449B2
JP7713449B2 JP2022531721A JP2022531721A JP7713449B2 JP 7713449 B2 JP7713449 B2 JP 7713449B2 JP 2022531721 A JP2022531721 A JP 2022531721A JP 2022531721 A JP2022531721 A JP 2022531721A JP 7713449 B2 JP7713449 B2 JP 7713449B2
Authority
JP
Japan
Prior art keywords
semiconductor laser
bonding material
laser element
submount
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022531721A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021261253A5 (https=
JPWO2021261253A1 (https=
Inventor
透 西川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuvoton Technology Corp Japan
Original Assignee
Nuvoton Technology Corp Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuvoton Technology Corp Japan filed Critical Nuvoton Technology Corp Japan
Publication of JPWO2021261253A1 publication Critical patent/JPWO2021261253A1/ja
Publication of JPWO2021261253A5 publication Critical patent/JPWO2021261253A5/ja
Application granted granted Critical
Publication of JP7713449B2 publication Critical patent/JP7713449B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H01S5/0216—Bonding to the substrate using an intermediate compound, e.g. a glue or solder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02315—Support members, e.g. bases or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02375—Positioning of the laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0268—Integrated waveguide grating router, e.g. emission of a multi-wavelength laser array is combined by a "dragon router"
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/60—Securing means for detachable heating or cooling arrangements, e.g. clamps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2022531721A 2020-06-22 2021-06-09 半導体レーザ装置 Active JP7713449B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020106789 2020-06-22
JP2020106789 2020-06-22
PCT/JP2021/021953 WO2021261253A1 (ja) 2020-06-22 2021-06-09 半導体レーザ装置および半導体レーザ装置の製造方法

Publications (3)

Publication Number Publication Date
JPWO2021261253A1 JPWO2021261253A1 (https=) 2021-12-30
JPWO2021261253A5 JPWO2021261253A5 (https=) 2023-03-06
JP7713449B2 true JP7713449B2 (ja) 2025-07-25

Family

ID=79281112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022531721A Active JP7713449B2 (ja) 2020-06-22 2021-06-09 半導体レーザ装置

Country Status (4)

Country Link
US (1) US20230104829A1 (https=)
JP (1) JP7713449B2 (https=)
CN (1) CN115917894B (https=)
WO (1) WO2021261253A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020132133A1 (de) * 2020-12-03 2022-06-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes laserbauteil und verfahren zur herstellung eines strahlungsemittierenden laserbauteils
JP2023143314A (ja) * 2022-03-25 2023-10-06 ヌヴォトンテクノロジージャパン株式会社 半導体発光装置、基台、半田付き基台、及び、半導体発光装置の製造方法
WO2025182613A1 (ja) * 2024-02-26 2025-09-04 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ装置、及び半導体レーザ装置の製造方法
WO2025182611A1 (ja) * 2024-02-26 2025-09-04 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ装置、及び半導体レーザ装置の製造方法
WO2025205525A1 (ja) * 2024-03-26 2025-10-02 ヌヴォトンテクノロジージャパン株式会社 サブマウント、半導体レーザ装置及び半導体レーザ装置の製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003347650A (ja) 2002-05-29 2003-12-05 Rohm Co Ltd 半導体発光装置
US20120068364A1 (en) 2010-09-21 2012-03-22 Manfred Mengel Device and Method for Manufacturing a Device
JP2012119637A (ja) 2010-12-03 2012-06-21 Sumitomo Electric Device Innovations Inc 光半導体装置の製造方法
JP2017059620A (ja) 2015-09-15 2017-03-23 ウシオ電機株式会社 半導体レーザ素子、および半導体レーザ装置の製造方法
JP2018164068A (ja) 2017-03-27 2018-10-18 ウシオオプトセミコンダクター株式会社 半導体レーザ装置
WO2018203466A1 (ja) 2017-05-01 2018-11-08 パナソニックＩｐマネジメント株式会社 窒化物系発光装置
WO2019163276A1 (ja) 2018-02-26 2019-08-29 パナソニック株式会社 半導体発光装置
WO2020031589A1 (ja) 2018-08-09 2020-02-13 ローム株式会社 半導体レーザ装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4529372B2 (ja) * 2003-04-23 2010-08-25 日亜化学工業株式会社 半導体レーザ素子
JP2009231820A (ja) * 2008-02-29 2009-10-08 Sanyo Electric Co Ltd 半導体レーザ素子およびその製造方法
JP2011018761A (ja) * 2009-07-08 2011-01-27 Sanyo Electric Co Ltd 半導体レーザ装置、半導体レーザ装置の製造方法及び光ピックアップ並びに光学装置
US10608404B2 (en) * 2017-02-14 2020-03-31 Cisco Technology, Inc. Bonded laser with solder-free laser active stripe in facing relationship with submount
WO2019026474A1 (ja) * 2017-08-04 2019-02-07 パナソニックＩｐマネジメント株式会社 サブマウント、半導体レーザ装置及び熱アシストハードディスク装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003347650A (ja) 2002-05-29 2003-12-05 Rohm Co Ltd 半導体発光装置
US20120068364A1 (en) 2010-09-21 2012-03-22 Manfred Mengel Device and Method for Manufacturing a Device
JP2012119637A (ja) 2010-12-03 2012-06-21 Sumitomo Electric Device Innovations Inc 光半導体装置の製造方法
JP2017059620A (ja) 2015-09-15 2017-03-23 ウシオ電機株式会社 半導体レーザ素子、および半導体レーザ装置の製造方法
JP2018164068A (ja) 2017-03-27 2018-10-18 ウシオオプトセミコンダクター株式会社 半導体レーザ装置
WO2018203466A1 (ja) 2017-05-01 2018-11-08 パナソニックＩｐマネジメント株式会社 窒化物系発光装置
WO2019163276A1 (ja) 2018-02-26 2019-08-29 パナソニック株式会社 半導体発光装置
WO2020031589A1 (ja) 2018-08-09 2020-02-13 ローム株式会社 半導体レーザ装置

Also Published As

Publication number Publication date
US20230104829A1 (en) 2023-04-06
CN115917894A (zh) 2023-04-04
CN115917894B (zh) 2026-04-17
JPWO2021261253A1 (https=) 2021-12-30
WO2021261253A1 (ja) 2021-12-30

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