CN115917894B - 半导体激光装置以及半导体激光装置的制造方法 - Google Patents

半导体激光装置以及半导体激光装置的制造方法

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Publication number
CN115917894B
CN115917894B CN202180043940.7A CN202180043940A CN115917894B CN 115917894 B CN115917894 B CN 115917894B CN 202180043940 A CN202180043940 A CN 202180043940A CN 115917894 B CN115917894 B CN 115917894B
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China
Prior art keywords
semiconductor laser
laser element
region
outer region
base
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Active
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CN202180043940.7A
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English (en)
Chinese (zh)
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CN115917894A (zh
Inventor
西川透
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Nuvoton Technology Corp Japan
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Nuvoton Technology Corp Japan
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H01S5/0216—Bonding to the substrate using an intermediate compound, e.g. a glue or solder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02315—Support members, e.g. bases or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02375—Positioning of the laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0268—Integrated waveguide grating router, e.g. emission of a multi-wavelength laser array is combined by a "dragon router"
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/60—Securing means for detachable heating or cooling arrangements, e.g. clamps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CN202180043940.7A 2020-06-22 2021-06-09 半导体激光装置以及半导体激光装置的制造方法 Active CN115917894B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020106789 2020-06-22
JP2020-106789 2020-06-22
PCT/JP2021/021953 WO2021261253A1 (ja) 2020-06-22 2021-06-09 半導体レーザ装置および半導体レーザ装置の製造方法

Publications (2)

Publication Number Publication Date
CN115917894A CN115917894A (zh) 2023-04-04
CN115917894B true CN115917894B (zh) 2026-04-17

Family

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Country Status (4)

Country Link
US (1) US20230104829A1 (https=)
JP (1) JP7713449B2 (https=)
CN (1) CN115917894B (https=)
WO (1) WO2021261253A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020132133A1 (de) * 2020-12-03 2022-06-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes laserbauteil und verfahren zur herstellung eines strahlungsemittierenden laserbauteils
JP2023143314A (ja) * 2022-03-25 2023-10-06 ヌヴォトンテクノロジージャパン株式会社 半導体発光装置、基台、半田付き基台、及び、半導体発光装置の製造方法
WO2025182613A1 (ja) * 2024-02-26 2025-09-04 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ装置、及び半導体レーザ装置の製造方法
WO2025182611A1 (ja) * 2024-02-26 2025-09-04 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ装置、及び半導体レーザ装置の製造方法
WO2025205525A1 (ja) * 2024-03-26 2025-10-02 ヌヴォトンテクノロジージャパン株式会社 サブマウント、半導体レーザ装置及び半導体レーザ装置の製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003347650A (ja) * 2002-05-29 2003-12-05 Rohm Co Ltd 半導体発光装置
JP2012119637A (ja) * 2010-12-03 2012-06-21 Sumitomo Electric Device Innovations Inc 光半導体装置の製造方法
JP2017059620A (ja) * 2015-09-15 2017-03-23 ウシオ電機株式会社 半導体レーザ素子、および半導体レーザ装置の製造方法
JP2018164068A (ja) * 2017-03-27 2018-10-18 ウシオオプトセミコンダクター株式会社 半導体レーザ装置
WO2018203466A1 (ja) * 2017-05-01 2018-11-08 パナソニックＩｐマネジメント株式会社 窒化物系発光装置
WO2019163276A1 (ja) * 2018-02-26 2019-08-29 パナソニック株式会社 半導体発光装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4529372B2 (ja) * 2003-04-23 2010-08-25 日亜化学工業株式会社 半導体レーザ素子
JP2009231820A (ja) * 2008-02-29 2009-10-08 Sanyo Electric Co Ltd 半導体レーザ素子およびその製造方法
JP2011018761A (ja) * 2009-07-08 2011-01-27 Sanyo Electric Co Ltd 半導体レーザ装置、半導体レーザ装置の製造方法及び光ピックアップ並びに光学装置
US8633600B2 (en) * 2010-09-21 2014-01-21 Infineon Technologies Ag Device and method for manufacturing a device
US10608404B2 (en) * 2017-02-14 2020-03-31 Cisco Technology, Inc. Bonded laser with solder-free laser active stripe in facing relationship with submount
WO2019026474A1 (ja) * 2017-08-04 2019-02-07 パナソニックＩｐマネジメント株式会社 サブマウント、半導体レーザ装置及び熱アシストハードディスク装置
JP7329519B2 (ja) * 2018-08-09 2023-08-18 ローム株式会社 半導体レーザ装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003347650A (ja) * 2002-05-29 2003-12-05 Rohm Co Ltd 半導体発光装置
JP2012119637A (ja) * 2010-12-03 2012-06-21 Sumitomo Electric Device Innovations Inc 光半導体装置の製造方法
JP2017059620A (ja) * 2015-09-15 2017-03-23 ウシオ電機株式会社 半導体レーザ素子、および半導体レーザ装置の製造方法
JP2018164068A (ja) * 2017-03-27 2018-10-18 ウシオオプトセミコンダクター株式会社 半導体レーザ装置
WO2018203466A1 (ja) * 2017-05-01 2018-11-08 パナソニックＩｐマネジメント株式会社 窒化物系発光装置
WO2019163276A1 (ja) * 2018-02-26 2019-08-29 パナソニック株式会社 半導体発光装置

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Publication number Publication date
US20230104829A1 (en) 2023-04-06
CN115917894A (zh) 2023-04-04
JP7713449B2 (ja) 2025-07-25
JPWO2021261253A1 (https=) 2021-12-30
WO2021261253A1 (ja) 2021-12-30

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