JPWO2021261253A1 - - Google Patents

Info

Publication number
JPWO2021261253A1
JPWO2021261253A1 JP2022531721A JP2022531721A JPWO2021261253A1 JP WO2021261253 A1 JPWO2021261253 A1 JP WO2021261253A1 JP 2022531721 A JP2022531721 A JP 2022531721A JP 2022531721 A JP2022531721 A JP 2022531721A JP WO2021261253 A1 JPWO2021261253 A1 JP WO2021261253A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022531721A
Other languages
Japanese (ja)
Other versions
JPWO2021261253A5 (https=
JP7713449B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021261253A1 publication Critical patent/JPWO2021261253A1/ja
Publication of JPWO2021261253A5 publication Critical patent/JPWO2021261253A5/ja
Application granted granted Critical
Publication of JP7713449B2 publication Critical patent/JP7713449B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H01S5/0216—Bonding to the substrate using an intermediate compound, e.g. a glue or solder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02375—Positioning of the laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0268—Integrated waveguide grating router, e.g. emission of a multi-wavelength laser array is combined by a "dragon router"
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/60—Securing means for detachable heating or cooling arrangements, e.g. clamps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02315—Support members, e.g. bases or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2022531721A 2020-06-22 2021-06-09 半導体レーザ装置 Active JP7713449B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020106789 2020-06-22
JP2020106789 2020-06-22
PCT/JP2021/021953 WO2021261253A1 (ja) 2020-06-22 2021-06-09 半導体レーザ装置および半導体レーザ装置の製造方法

Publications (3)

Publication Number Publication Date
JPWO2021261253A1 true JPWO2021261253A1 (https=) 2021-12-30
JPWO2021261253A5 JPWO2021261253A5 (https=) 2023-03-06
JP7713449B2 JP7713449B2 (ja) 2025-07-25

Family

ID=79281112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022531721A Active JP7713449B2 (ja) 2020-06-22 2021-06-09 半導体レーザ装置

Country Status (4)

Country Link
US (1) US20230104829A1 (https=)
JP (1) JP7713449B2 (https=)
CN (1) CN115917894B (https=)
WO (1) WO2021261253A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020132133A1 (de) * 2020-12-03 2022-06-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes laserbauteil und verfahren zur herstellung eines strahlungsemittierenden laserbauteils
JP2023143314A (ja) * 2022-03-25 2023-10-06 ヌヴォトンテクノロジージャパン株式会社 半導体発光装置、基台、半田付き基台、及び、半導体発光装置の製造方法
WO2025182613A1 (ja) * 2024-02-26 2025-09-04 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ装置、及び半導体レーザ装置の製造方法
WO2025182611A1 (ja) * 2024-02-26 2025-09-04 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ装置、及び半導体レーザ装置の製造方法
WO2025205525A1 (ja) * 2024-03-26 2025-10-02 ヌヴォトンテクノロジージャパン株式会社 サブマウント、半導体レーザ装置及び半導体レーザ装置の製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003347650A (ja) * 2002-05-29 2003-12-05 Rohm Co Ltd 半導体発光装置
US20120068364A1 (en) * 2010-09-21 2012-03-22 Manfred Mengel Device and Method for Manufacturing a Device
JP2012119637A (ja) * 2010-12-03 2012-06-21 Sumitomo Electric Device Innovations Inc 光半導体装置の製造方法
JP2017059620A (ja) * 2015-09-15 2017-03-23 ウシオ電機株式会社 半導体レーザ素子、および半導体レーザ装置の製造方法
JP2018164068A (ja) * 2017-03-27 2018-10-18 ウシオオプトセミコンダクター株式会社 半導体レーザ装置
WO2018203466A1 (ja) * 2017-05-01 2018-11-08 パナソニックＩｐマネジメント株式会社 窒化物系発光装置
WO2019163276A1 (ja) * 2018-02-26 2019-08-29 パナソニック株式会社 半導体発光装置
WO2020031589A1 (ja) * 2018-08-09 2020-02-13 ローム株式会社 半導体レーザ装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4529372B2 (ja) * 2003-04-23 2010-08-25 日亜化学工業株式会社 半導体レーザ素子
JP2009231820A (ja) * 2008-02-29 2009-10-08 Sanyo Electric Co Ltd 半導体レーザ素子およびその製造方法
JP2011018761A (ja) * 2009-07-08 2011-01-27 Sanyo Electric Co Ltd 半導体レーザ装置、半導体レーザ装置の製造方法及び光ピックアップ並びに光学装置
US10608404B2 (en) * 2017-02-14 2020-03-31 Cisco Technology, Inc. Bonded laser with solder-free laser active stripe in facing relationship with submount
WO2019026474A1 (ja) * 2017-08-04 2019-02-07 パナソニックＩｐマネジメント株式会社 サブマウント、半導体レーザ装置及び熱アシストハードディスク装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003347650A (ja) * 2002-05-29 2003-12-05 Rohm Co Ltd 半導体発光装置
US20120068364A1 (en) * 2010-09-21 2012-03-22 Manfred Mengel Device and Method for Manufacturing a Device
JP2012119637A (ja) * 2010-12-03 2012-06-21 Sumitomo Electric Device Innovations Inc 光半導体装置の製造方法
JP2017059620A (ja) * 2015-09-15 2017-03-23 ウシオ電機株式会社 半導体レーザ素子、および半導体レーザ装置の製造方法
JP2018164068A (ja) * 2017-03-27 2018-10-18 ウシオオプトセミコンダクター株式会社 半導体レーザ装置
WO2018203466A1 (ja) * 2017-05-01 2018-11-08 パナソニックＩｐマネジメント株式会社 窒化物系発光装置
WO2019163276A1 (ja) * 2018-02-26 2019-08-29 パナソニック株式会社 半導体発光装置
WO2020031589A1 (ja) * 2018-08-09 2020-02-13 ローム株式会社 半導体レーザ装置

Also Published As

Publication number Publication date
US20230104829A1 (en) 2023-04-06
CN115917894A (zh) 2023-04-04
CN115917894B (zh) 2026-04-17
JP7713449B2 (ja) 2025-07-25
WO2021261253A1 (ja) 2021-12-30

Similar Documents

Publication Publication Date Title
BR112023005462A2 (https=)
BR112023012656A2 (https=)
BR112021014123A2 (https=)
BR112023009656A2 (https=)
BR112022009896A2 (https=)
BR112021017747A2 (https=)
BR112022024743A2 (https=)
BR112022026905A2 (https=)
BR112023011738A2 (https=)
BR112023004146A2 (https=)
BR112023006729A2 (https=)
BR102021018859A2 (https=)
BR102021015500A2 (https=)
BR102021007058A2 (https=)
BR102020022030A2 (https=)
BR112023016292A2 (https=)
BR112023011539A2 (https=)
BR112023011610A2 (https=)
BR112023008976A2 (https=)
BR102021020147A2 (https=)
BR102021018926A2 (https=)
BR102021018167A2 (https=)
BR102021017576A2 (https=)
BR102021016837A2 (https=)
BR102021016551A2 (https=)

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20221216

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240605

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250415

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250616

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250624

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250714

R150 Certificate of patent or registration of utility model

Ref document number: 7713449

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150