JP7651578B2 - 発光素子およびそれを有するｌｅｄディスプレイ装置 - Google Patents

発光素子およびそれを有するｌｅｄディスプレイ装置 Download PDF

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Publication number
JP7651578B2
JP7651578B2 JP2022540346A JP2022540346A JP7651578B2 JP 7651578 B2 JP7651578 B2 JP 7651578B2 JP 2022540346 A JP2022540346 A JP 2022540346A JP 2022540346 A JP2022540346 A JP 2022540346A JP 7651578 B2 JP7651578 B2 JP 7651578B2
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light
light emitting
emitting stack
emitting
type semiconductor
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JPWO2021133140A5 (https=
JP2023510170A (ja
JP2023510170A5 (https=
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ジョン・ミン・ジャン
スン・ヒュン・イ
チャン・ヨン・キム
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Seoul Viosys Co Ltd
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Seoul Viosys Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/832—Electrodes
    • H10H29/8321—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/962—Stacked configurations of light-emitting semiconductor components or devices, the components or devices emitting at different wavelengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/832—Electrodes
    • H10H29/8322—Electrodes characterised by their materials

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Illuminated Signs And Luminous Advertising (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2022540346A 2019-12-28 2020-12-28 発光素子およびそれを有するｌｅｄディスプレイ装置 Active JP7651578B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201962954406P 2019-12-28 2019-12-28
US62/954,406 2019-12-28
US202063000044P 2020-03-26 2020-03-26
US63/000,044 2020-03-26
US17/133,623 US11688840B2 (en) 2019-12-28 2020-12-23 Light emitting device and led display apparatus having the same
US17/133,623 2020-12-23
PCT/KR2020/019198 WO2021133140A1 (ko) 2019-12-28 2020-12-28 발광 소자 및 그것을 갖는 led 디스플레이 장치

Publications (4)

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JP2023510170A JP2023510170A (ja) 2023-03-13
JPWO2021133140A5 JPWO2021133140A5 (https=) 2024-01-12
JP2023510170A5 JP2023510170A5 (https=) 2024-01-12
JP7651578B2 true JP7651578B2 (ja) 2025-03-26

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US (2) US11688840B2 (https=)
EP (1) EP4084097A4 (https=)
JP (1) JP7651578B2 (https=)
KR (1) KR20220123640A (https=)
CN (2) CN213878132U (https=)
CA (1) CA3166227A1 (https=)
WO (1) WO2021133140A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11688840B2 (en) * 2019-12-28 2023-06-27 Seoul Viosys Co., Ltd. Light emitting device and led display apparatus having the same
US11476299B2 (en) * 2020-08-31 2022-10-18 Hong Kong Beida Jade Bird Display Limited Double color micro LED display panel
JP7806539B2 (ja) * 2022-02-16 2026-01-27 沖電気工業株式会社 発光装置
CN115000273A (zh) * 2022-05-25 2022-09-02 东莞市立德达光电科技有限公司 一种led封装结构及方法
WO2023229194A1 (ko) * 2022-05-27 2023-11-30 삼성전자주식회사 마이크로 발광 다이오드를 포함하는 디스플레이 모듈
CN121038458B (zh) * 2025-10-21 2026-03-06 上海显耀显示科技股份有限公司 一种微型led显示芯片

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JP2008258459A (ja) 2007-04-06 2008-10-23 Toshiba Corp 発光装置及びその製造方法
JP2011100892A (ja) 2009-11-06 2011-05-19 Sumitomo Electric Ind Ltd 電子機器、複合型電子機器、検出装置、受光素子アレイ、および、これらの製造方法
JP2011159672A (ja) 2010-01-29 2011-08-18 Oki Data Corp 半導体発光装置および画像表示装置
JP2013098514A (ja) 2011-11-07 2013-05-20 Seiko Epson Corp 半導体装置の製造方法及び半導体装置、電子機器
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US20170288093A1 (en) 2016-04-04 2017-10-05 Samsung Electronics Co., Ltd. Led light source module and display device
US20170358716A1 (en) 2016-06-14 2017-12-14 Samsung Electronics Co., Ltd. Light emitting device package and method of manufacturing the same
JP2019509636A (ja) 2016-03-09 2019-04-04 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス部品およびオプトエレクトロニクス部品を製造するための方法
US20190165207A1 (en) 2017-11-27 2019-05-30 Seoul Viosys Co., Ltd. Led unit for display and display apparatus having the same
US20190164944A1 (en) 2017-11-27 2019-05-30 Seoul Viosys Co., Ltd. Led unit for display and display apparatus having the same
WO2019126728A1 (en) 2017-12-22 2019-06-27 Lumileds Llc Iii-nitride multi-wavelength light emitting diodes
CN110246953A (zh) 2019-07-26 2019-09-17 厦门乾照半导体科技有限公司 一种Micro-LED芯片、显示设备及Micro-LED芯片的制作方法
JP2019534565A (ja) 2016-10-24 2019-11-28 グロ アーベーＧｌｏ Ａｂ 窒化インジウムガリウム赤色発光ダイオード、および、その製造方法

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JP2002016312A (ja) 2000-06-27 2002-01-18 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法
JP2004300570A (ja) 2003-03-18 2004-10-28 Ngk Spark Plug Co Ltd 配線基板
JP2007095844A (ja) 2005-09-27 2007-04-12 Oki Data Corp 半導体発光複合装置
JP2007227820A (ja) 2006-02-27 2007-09-06 Stanley Electric Co Ltd 半導体装置及びその製造方法
JP2008258459A (ja) 2007-04-06 2008-10-23 Toshiba Corp 発光装置及びその製造方法
JP2011100892A (ja) 2009-11-06 2011-05-19 Sumitomo Electric Ind Ltd 電子機器、複合型電子機器、検出装置、受光素子アレイ、および、これらの製造方法
JP2011159672A (ja) 2010-01-29 2011-08-18 Oki Data Corp 半導体発光装置および画像表示装置
JP2013098514A (ja) 2011-11-07 2013-05-20 Seiko Epson Corp 半導体装置の製造方法及び半導体装置、電子機器
JP2015038910A (ja) 2012-07-13 2015-02-26 イビデン株式会社 配線板及びその製造方法
US20140209955A1 (en) 2013-01-29 2014-07-31 Samsung Electronics Co., Ltd. Semiconductor light-emitting device
JP2015138870A (ja) 2014-01-22 2015-07-30 豊田合成株式会社 発光素子、発光装置およびその製造方法
US20170117257A1 (en) 2015-10-26 2017-04-27 Lg Electronics Inc. Display device using semiconductor light emitting device and method for manufacturing the same
JP2019509636A (ja) 2016-03-09 2019-04-04 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス部品およびオプトエレクトロニクス部品を製造するための方法
US20170288093A1 (en) 2016-04-04 2017-10-05 Samsung Electronics Co., Ltd. Led light source module and display device
US20170358716A1 (en) 2016-06-14 2017-12-14 Samsung Electronics Co., Ltd. Light emitting device package and method of manufacturing the same
JP2019534565A (ja) 2016-10-24 2019-11-28 グロ アーベーＧｌｏ Ａｂ 窒化インジウムガリウム赤色発光ダイオード、および、その製造方法
US20190165207A1 (en) 2017-11-27 2019-05-30 Seoul Viosys Co., Ltd. Led unit for display and display apparatus having the same
US20190164944A1 (en) 2017-11-27 2019-05-30 Seoul Viosys Co., Ltd. Led unit for display and display apparatus having the same
WO2019126728A1 (en) 2017-12-22 2019-06-27 Lumileds Llc Iii-nitride multi-wavelength light emitting diodes
CN110246953A (zh) 2019-07-26 2019-09-17 厦门乾照半导体科技有限公司 一种Micro-LED芯片、显示设备及Micro-LED芯片的制作方法

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Publication number Publication date
WO2021133140A1 (ko) 2021-07-01
US20230282797A1 (en) 2023-09-07
EP4084097A4 (en) 2024-01-24
KR20220123640A (ko) 2022-09-08
US11688840B2 (en) 2023-06-27
CN114902434A (zh) 2022-08-12
CA3166227A1 (en) 2021-07-01
US20210202815A1 (en) 2021-07-01
JP2023510170A (ja) 2023-03-13
CN213878132U (zh) 2021-08-03
EP4084097A1 (en) 2022-11-02

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