JP7612889B2 - ウエハ処理方法 - Google Patents

ウエハ処理方法 Download PDF

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Publication number
JP7612889B2
JP7612889B2 JP2023553340A JP2023553340A JP7612889B2 JP 7612889 B2 JP7612889 B2 JP 7612889B2 JP 2023553340 A JP2023553340 A JP 2023553340A JP 2023553340 A JP2023553340 A JP 2023553340A JP 7612889 B2 JP7612889 B2 JP 7612889B2
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Japan
Prior art keywords
wafer
sample stage
plasma
processing
gas
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Active
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JP2023553340A
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English (en)
Japanese (ja)
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JPWO2024029000A5 (https=
JPWO2024029000A1 (https=
Inventor
望 吉岡
一暢 大隈
謙一 桑原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
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Hitachi High Tech Corp
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Publication of JPWO2024029000A5 publication Critical patent/JPWO2024029000A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2023553340A 2022-08-03 2022-08-03 ウエハ処理方法 Active JP7612889B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/029761 WO2024029000A1 (ja) 2022-08-03 2022-08-03 ウエハ処理方法

Publications (3)

Publication Number Publication Date
JPWO2024029000A1 JPWO2024029000A1 (https=) 2024-02-08
JPWO2024029000A5 JPWO2024029000A5 (https=) 2024-07-09
JP7612889B2 true JP7612889B2 (ja) 2025-01-14

Family

ID=89848757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023553340A Active JP7612889B2 (ja) 2022-08-03 2022-08-03 ウエハ処理方法

Country Status (6)

Country Link
US (1) US20250038033A1 (https=)
JP (1) JP7612889B2 (https=)
KR (1) KR102859137B1 (https=)
CN (1) CN117836912A (https=)
TW (1) TWI875108B (https=)
WO (1) WO2024029000A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222799A (ja) 2001-01-25 2002-08-09 Tokyo Electron Ltd プラズマ処理装置およびそのクリーニング方法および静電チャックの除電方法
JP2017216346A (ja) 2016-05-31 2017-12-07 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
JP2022024265A (ja) 2020-07-13 2022-02-09 東京エレクトロン株式会社 基板離脱方法及びプラズマ処理装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002217166A (ja) 2001-01-19 2002-08-02 Toshiba Corp ガス処理装置のクリーニング方法
JP6708358B2 (ja) * 2016-08-03 2020-06-10 株式会社日立ハイテク プラズマ処理装置及び試料の離脱方法
JP7462383B2 (ja) 2019-04-15 2024-04-05 東京エレクトロン株式会社 クリーニング方法及びプラズマ処理装置
JP7340953B2 (ja) * 2019-04-26 2023-09-08 東京エレクトロン株式会社 除電方法、基板処理方法及び基板処理装置
US20250218745A1 (en) * 2022-05-20 2025-07-03 Nextin, Inc. Static electrcity control device for semiconductor processing system

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222799A (ja) 2001-01-25 2002-08-09 Tokyo Electron Ltd プラズマ処理装置およびそのクリーニング方法および静電チャックの除電方法
JP2017216346A (ja) 2016-05-31 2017-12-07 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
JP2022024265A (ja) 2020-07-13 2022-02-09 東京エレクトロン株式会社 基板離脱方法及びプラズマ処理装置

Also Published As

Publication number Publication date
TW202407802A (zh) 2024-02-16
WO2024029000A1 (ja) 2024-02-08
KR102859137B1 (ko) 2025-09-12
US20250038033A1 (en) 2025-01-30
CN117836912A (zh) 2024-04-05
KR20240019752A (ko) 2024-02-14
JPWO2024029000A1 (https=) 2024-02-08
TWI875108B (zh) 2025-03-01

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