JP7597581B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7597581B2
JP7597581B2 JP2020561969A JP2020561969A JP7597581B2 JP 7597581 B2 JP7597581 B2 JP 7597581B2 JP 2020561969 A JP2020561969 A JP 2020561969A JP 2020561969 A JP2020561969 A JP 2020561969A JP 7597581 B2 JP7597581 B2 JP 7597581B2
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Japan
Prior art keywords
oxide
conductor
insulator
transistor
silicon substrate
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JP2020561969A
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English (en)
Japanese (ja)
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JPWO2020136470A5 (https=
JPWO2020136470A1 (https=
Inventor
陽夫 鈴木
厚 宮口
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JPWO2020136470A1 publication Critical patent/JPWO2020136470A1/ja
Publication of JPWO2020136470A5 publication Critical patent/JPWO2020136470A5/ja
Priority to JP2024206931A priority Critical patent/JP7748531B2/ja
Application granted granted Critical
Publication of JP7597581B2 publication Critical patent/JP7597581B2/ja
Priority to JP2025155886A priority patent/JP2025181913A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/15—Containers comprising an insulating or insulated base
    • H10W76/157—Containers comprising an insulating or insulated base having interconnections parallel to the insulating or insulated base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/43—Layouts of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/076—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40—Fillings or auxiliary members in containers, e.g. centering rings
    • H10W76/42—Fillings
    • H10W76/47—Solid or gel fillings

Landscapes

  • Thin Film Transistor (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Electroluminescent Light Sources (AREA)
JP2020561969A 2018-12-27 2019-11-20 半導体装置 Active JP7597581B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024206931A JP7748531B2 (ja) 2018-12-27 2024-11-28 半導体装置
JP2025155886A JP2025181913A (ja) 2018-12-27 2025-09-19 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018243859 2018-12-27
JP2018243859 2018-12-27
PCT/IB2019/059960 WO2020136470A1 (ja) 2018-12-27 2019-11-20 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024206931A Division JP7748531B2 (ja) 2018-12-27 2024-11-28 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2020136470A1 JPWO2020136470A1 (https=) 2020-07-02
JPWO2020136470A5 JPWO2020136470A5 (https=) 2022-11-10
JP7597581B2 true JP7597581B2 (ja) 2024-12-10

Family

ID=71127579

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2020561969A Active JP7597581B2 (ja) 2018-12-27 2019-11-20 半導体装置
JP2024206931A Active JP7748531B2 (ja) 2018-12-27 2024-11-28 半導体装置
JP2025155886A Pending JP2025181913A (ja) 2018-12-27 2025-09-19 半導体装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2024206931A Active JP7748531B2 (ja) 2018-12-27 2024-11-28 半導体装置
JP2025155886A Pending JP2025181913A (ja) 2018-12-27 2025-09-19 半導体装置

Country Status (3)

Country Link
US (2) US12205892B2 (https=)
JP (3) JP7597581B2 (https=)
WO (1) WO2020136470A1 (https=)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006319338A (ja) 2005-05-11 2006-11-24 Magnachip Semiconductor Ltd 半導体チップ及び半導体チップパッケージ
US20110057254A1 (en) 2009-09-10 2011-03-10 Niko Semiconductor Co., Ltd. Metal-oxide-semiconductor chip and fabrication method thereof
JP2011103458A (ja) 2009-10-16 2011-05-26 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2013089613A (ja) 2011-10-13 2013-05-13 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2016006855A (ja) 2014-05-30 2016-01-14 株式会社半導体エネルギー研究所 半導体装置とその作製方法、電子機器
JP2016162913A (ja) 2015-03-03 2016-09-05 三菱電機株式会社 半導体モジュールおよびその製造方法
WO2017125795A1 (ja) 2016-01-22 2017-07-27 株式会社半導体エネルギー研究所 トランジスタ、撮像装置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2776149B2 (ja) * 1992-06-15 1998-07-16 日本電気株式会社 半導体集積回路
JP3111948B2 (ja) * 1997-10-31 2000-11-27 日本電気株式会社 半導体集積回路
US6121659A (en) 1998-03-27 2000-09-19 International Business Machines Corporation Buried patterned conductor planes for semiconductor-on-insulator integrated circuit
KR20130061678A (ko) 2010-04-16 2013-06-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전원 회로
US9929276B2 (en) 2012-08-10 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6325229B2 (ja) 2012-10-17 2018-05-16 株式会社半導体エネルギー研究所 酸化物膜の作製方法
US9385058B1 (en) 2012-12-29 2016-07-05 Monolithic 3D Inc. Semiconductor device and structure
JP6020731B2 (ja) 2013-08-29 2016-11-02 三菱電機株式会社 半導体モジュール、半導体装置、及び自動車
JP6249829B2 (ja) * 2014-03-10 2017-12-20 三菱電機株式会社 半導体装置およびその製造方法
KR102367921B1 (ko) 2014-03-14 2022-02-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 회로 시스템
US9674470B2 (en) 2014-04-11 2017-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for driving semiconductor device, and method for driving electronic device
US9685560B2 (en) 2015-03-02 2017-06-20 Semiconductor Energy Laboratory Co., Ltd. Transistor, method for manufacturing transistor, semiconductor device, and electronic device
US20170098599A1 (en) * 2015-10-01 2017-04-06 United Microelectronics Corp. Oxide semiconductor device and manufacturing method thereof
JP6811084B2 (ja) 2015-12-18 2021-01-13 株式会社半導体エネルギー研究所 半導体装置
US9917207B2 (en) 2015-12-25 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10020336B2 (en) 2015-12-28 2018-07-10 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device using three dimentional (3D) integration
JP6845692B2 (ja) 2016-01-15 2021-03-24 株式会社半導体エネルギー研究所 半導体装置
JP7020783B2 (ja) 2016-02-03 2022-02-16 株式会社半導体エネルギー研究所 撮像装置
US10333004B2 (en) 2016-03-18 2019-06-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, module and electronic device
WO2018051208A1 (en) 2016-09-14 2018-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
KR102579972B1 (ko) 2017-09-05 2023-09-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP7328146B2 (ja) 2017-09-06 2023-08-16 株式会社半導体エネルギー研究所 記憶装置及び電子機器
KR102871324B1 (ko) 2018-06-08 2025-10-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US11031506B2 (en) 2018-08-31 2021-06-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor using oxide semiconductor

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006319338A (ja) 2005-05-11 2006-11-24 Magnachip Semiconductor Ltd 半導体チップ及び半導体チップパッケージ
US20110057254A1 (en) 2009-09-10 2011-03-10 Niko Semiconductor Co., Ltd. Metal-oxide-semiconductor chip and fabrication method thereof
JP2011103458A (ja) 2009-10-16 2011-05-26 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2013089613A (ja) 2011-10-13 2013-05-13 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2016006855A (ja) 2014-05-30 2016-01-14 株式会社半導体エネルギー研究所 半導体装置とその作製方法、電子機器
JP2016162913A (ja) 2015-03-03 2016-09-05 三菱電機株式会社 半導体モジュールおよびその製造方法
WO2017125795A1 (ja) 2016-01-22 2017-07-27 株式会社半導体エネルギー研究所 トランジスタ、撮像装置

Also Published As

Publication number Publication date
US12205892B2 (en) 2025-01-21
JP2025181913A (ja) 2025-12-11
US20250132251A1 (en) 2025-04-24
WO2020136470A1 (ja) 2020-07-02
JP2025023060A (ja) 2025-02-14
JPWO2020136470A1 (https=) 2020-07-02
JP7748531B2 (ja) 2025-10-02
US20220020683A1 (en) 2022-01-20

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