JPWO2020136470A5 - - Google Patents
Download PDFInfo
- Publication number
- JPWO2020136470A5 JPWO2020136470A5 JP2020561969A JP2020561969A JPWO2020136470A5 JP WO2020136470 A5 JPWO2020136470 A5 JP WO2020136470A5 JP 2020561969 A JP2020561969 A JP 2020561969A JP 2020561969 A JP2020561969 A JP 2020561969A JP WO2020136470 A5 JPWO2020136470 A5 JP WO2020136470A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon substrate
- transistor
- conductor
- extraction electrode
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 15
- 229910052710 silicon Inorganic materials 0.000 claims 15
- 239000010703 silicon Substances 0.000 claims 15
- 239000000758 substrate Substances 0.000 claims 15
- 239000004020 conductor Substances 0.000 claims 6
- 238000000605 extraction Methods 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 6
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 239000011347 resin Substances 0.000 claims 2
- 229920005989 resin Polymers 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024206931A JP7748531B2 (ja) | 2018-12-27 | 2024-11-28 | 半導体装置 |
| JP2025155886A JP2025181913A (ja) | 2018-12-27 | 2025-09-19 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018243859 | 2018-12-27 | ||
| JP2018243859 | 2018-12-27 | ||
| PCT/IB2019/059960 WO2020136470A1 (ja) | 2018-12-27 | 2019-11-20 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024206931A Division JP7748531B2 (ja) | 2018-12-27 | 2024-11-28 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020136470A1 JPWO2020136470A1 (https=) | 2020-07-02 |
| JPWO2020136470A5 true JPWO2020136470A5 (https=) | 2022-11-10 |
| JP7597581B2 JP7597581B2 (ja) | 2024-12-10 |
Family
ID=71127579
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020561969A Active JP7597581B2 (ja) | 2018-12-27 | 2019-11-20 | 半導体装置 |
| JP2024206931A Active JP7748531B2 (ja) | 2018-12-27 | 2024-11-28 | 半導体装置 |
| JP2025155886A Pending JP2025181913A (ja) | 2018-12-27 | 2025-09-19 | 半導体装置 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024206931A Active JP7748531B2 (ja) | 2018-12-27 | 2024-11-28 | 半導体装置 |
| JP2025155886A Pending JP2025181913A (ja) | 2018-12-27 | 2025-09-19 | 半導体装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US12205892B2 (https=) |
| JP (3) | JP7597581B2 (https=) |
| WO (1) | WO2020136470A1 (https=) |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2776149B2 (ja) * | 1992-06-15 | 1998-07-16 | 日本電気株式会社 | 半導体集積回路 |
| JP3111948B2 (ja) * | 1997-10-31 | 2000-11-27 | 日本電気株式会社 | 半導体集積回路 |
| US6121659A (en) | 1998-03-27 | 2000-09-19 | International Business Machines Corporation | Buried patterned conductor planes for semiconductor-on-insulator integrated circuit |
| KR100644028B1 (ko) | 2005-05-11 | 2006-11-10 | 매그나칩 반도체 유한회사 | 반도체 칩 및 반도체 칩 패키지 |
| US8169019B2 (en) * | 2009-09-10 | 2012-05-01 | Niko Semiconductor Co., Ltd. | Metal-oxide-semiconductor chip and fabrication method thereof |
| KR101772639B1 (ko) | 2009-10-16 | 2017-08-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR20130061678A (ko) | 2010-04-16 | 2013-06-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전원 회로 |
| JP5912394B2 (ja) | 2011-10-13 | 2016-04-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9929276B2 (en) | 2012-08-10 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP6325229B2 (ja) | 2012-10-17 | 2018-05-16 | 株式会社半導体エネルギー研究所 | 酸化物膜の作製方法 |
| US9385058B1 (en) | 2012-12-29 | 2016-07-05 | Monolithic 3D Inc. | Semiconductor device and structure |
| JP6020731B2 (ja) | 2013-08-29 | 2016-11-02 | 三菱電機株式会社 | 半導体モジュール、半導体装置、及び自動車 |
| JP6249829B2 (ja) * | 2014-03-10 | 2017-12-20 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| KR102367921B1 (ko) | 2014-03-14 | 2022-02-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 회로 시스템 |
| US9674470B2 (en) | 2014-04-11 | 2017-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for driving semiconductor device, and method for driving electronic device |
| KR102582740B1 (ko) * | 2014-05-30 | 2023-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 이의 제조 방법, 및 전자 장치 |
| US9685560B2 (en) | 2015-03-02 | 2017-06-20 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, method for manufacturing transistor, semiconductor device, and electronic device |
| JP6208164B2 (ja) * | 2015-03-03 | 2017-10-04 | 三菱電機株式会社 | 半導体モジュールおよびその製造方法 |
| US20170098599A1 (en) * | 2015-10-01 | 2017-04-06 | United Microelectronics Corp. | Oxide semiconductor device and manufacturing method thereof |
| JP6811084B2 (ja) | 2015-12-18 | 2021-01-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9917207B2 (en) | 2015-12-25 | 2018-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US10020336B2 (en) | 2015-12-28 | 2018-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device using three dimentional (3D) integration |
| JP6845692B2 (ja) | 2016-01-15 | 2021-03-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2017125795A1 (ja) * | 2016-01-22 | 2017-07-27 | 株式会社半導体エネルギー研究所 | トランジスタ、撮像装置 |
| JP7020783B2 (ja) | 2016-02-03 | 2022-02-16 | 株式会社半導体エネルギー研究所 | 撮像装置 |
| US10333004B2 (en) | 2016-03-18 | 2019-06-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, semiconductor wafer, module and electronic device |
| WO2018051208A1 (en) | 2016-09-14 | 2018-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
| KR102579972B1 (ko) | 2017-09-05 | 2023-09-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| JP7328146B2 (ja) | 2017-09-06 | 2023-08-16 | 株式会社半導体エネルギー研究所 | 記憶装置及び電子機器 |
| KR102871324B1 (ko) | 2018-06-08 | 2025-10-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| US11031506B2 (en) | 2018-08-31 | 2021-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including transistor using oxide semiconductor |
-
2019
- 2019-11-20 US US17/297,863 patent/US12205892B2/en active Active
- 2019-11-20 WO PCT/IB2019/059960 patent/WO2020136470A1/ja not_active Ceased
- 2019-11-20 JP JP2020561969A patent/JP7597581B2/ja active Active
-
2024
- 2024-11-28 JP JP2024206931A patent/JP7748531B2/ja active Active
- 2024-12-20 US US18/989,697 patent/US20250132251A1/en active Pending
-
2025
- 2025-09-19 JP JP2025155886A patent/JP2025181913A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2022002321A5 (https=) | ||
| JP2020194966A5 (https=) | ||
| JP2023181469A5 (https=) | ||
| JP2019008298A5 (https=) | ||
| JP2021168394A5 (ja) | 表示装置 | |
| JP2022051730A5 (https=) | ||
| JP2011054949A5 (ja) | 半導体装置 | |
| JP2020167423A5 (https=) | ||
| JP2020526938A5 (ja) | Ｎａｎｄメモリデバイスおよびｎａｎｄメモリデバイスを形成するための方法 | |
| JP2013514632A5 (https=) | ||
| JPWO2021094878A5 (https=) | ||
| JP2020120116A5 (ja) | 半導体装置 | |
| JP2018085508A5 (ja) | 半導体装置 | |
| JP2017041635A5 (https=) | ||
| JP2018190976A5 (ja) | 半導体装置 | |
| JP2019009308A5 (https=) | ||
| JP2013004636A5 (https=) | ||
| JP2014215485A5 (https=) | ||
| JP2011211187A5 (ja) | 半導体装置 | |
| JP2011009352A5 (ja) | 半導体装置 | |
| JPWO2019135137A5 (ja) | 半導体装置 | |
| JP2014033200A5 (https=) | ||
| JP2026034497A5 (https=) | ||
| JP2017120904A5 (ja) | 半導体装置 | |
| JP2003007843A5 (https=) |