JP7589231B2 - フィードバック制御およびフィードフォワード制御を用いた、ナノインプリントリソグラフィにおける位置合わせ制御 - Google Patents

フィードバック制御およびフィードフォワード制御を用いた、ナノインプリントリソグラフィにおける位置合わせ制御 Download PDF

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JP7589231B2
JP7589231B2 JP2022510203A JP2022510203A JP7589231B2 JP 7589231 B2 JP7589231 B2 JP 7589231B2 JP 2022510203 A JP2022510203 A JP 2022510203A JP 2022510203 A JP2022510203 A JP 2022510203A JP 7589231 B2 JP7589231 B2 JP 7589231B2
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information
stage
feedforward
control signal
substrate
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Japanese (ja)
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JP2023506342A (ja
JP2023506342A5 (https=
Inventor
ミンジ ロウ,
ビュン-ジン チョイ,
ジェフリー ディー. クライン,
貴裕 吉田
スティーブン ティー. ジェンキンス,
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Canon Inc
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Canon Inc
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7042Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0428Apparatus for mechanical treatment or grinding or cutting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/53Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment using optical controlling means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00Marks applied to devices, e.g. for alignment or identification
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00Marks applied to devices, e.g. for alignment or identification
    • H10W46/301Marks applied to devices, e.g. for alignment or identification for alignment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2022510203A 2019-12-12 2020-10-27 フィードバック制御およびフィードフォワード制御を用いた、ナノインプリントリソグラフィにおける位置合わせ制御 Active JP7589231B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/712,739 2019-12-12
US16/712,739 US11422460B2 (en) 2019-12-12 2019-12-12 Alignment control in nanoimprint lithography using feedback and feedforward control
PCT/US2020/057520 WO2021118698A1 (en) 2019-12-12 2020-10-27 Alignment control in nanoimprint lithography using feedback and feedforward control

Publications (3)

Publication Number Publication Date
JP2023506342A JP2023506342A (ja) 2023-02-16
JP2023506342A5 JP2023506342A5 (https=) 2023-11-06
JP7589231B2 true JP7589231B2 (ja) 2024-11-25

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JP2022510203A Active JP7589231B2 (ja) 2019-12-12 2020-10-27 フィードバック制御およびフィードフォワード制御を用いた、ナノインプリントリソグラフィにおける位置合わせ制御

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Country Link
US (1) US11422460B2 (https=)
JP (1) JP7589231B2 (https=)
KR (1) KR102874085B1 (https=)
CN (1) CN114667485B (https=)
TW (1) TWI794664B (https=)
WO (1) WO2021118698A1 (https=)

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US12195382B2 (en) * 2021-12-01 2025-01-14 Canon Kabushiki Kaisha Superstrate and a method of using the same
CN118610132B (zh) * 2024-08-09 2024-10-29 青岛天仁微纳科技有限责任公司 一种基于晶圆检测数据的生成设备参数调节方法及系统
CN120969152A (zh) * 2025-09-23 2025-11-18 宁波市汉鸣科技股份有限公司 压缩机抽真空同步移动控制方法及装置

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JP2016154207A (ja) 2015-02-12 2016-08-25 キヤノン株式会社 インプリント装置、および物品の製造方法
JP2019110295A (ja) 2017-12-18 2019-07-04 キヤノン株式会社 リアルタイムシステム同定に基づくインプリントリソグラフィにおけるアライメント制御
JP2019140289A (ja) 2018-02-13 2019-08-22 キヤノン株式会社 インプリント装置、および、物品製造方法

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JP2016004440A (ja) 2014-06-17 2016-01-12 キヤノン株式会社 ステージ装置、リソグラフィ装置、物品の製造方法、および決定方法
JP2016154207A (ja) 2015-02-12 2016-08-25 キヤノン株式会社 インプリント装置、および物品の製造方法
JP2019110295A (ja) 2017-12-18 2019-07-04 キヤノン株式会社 リアルタイムシステム同定に基づくインプリントリソグラフィにおけるアライメント制御
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Also Published As

Publication number Publication date
TWI794664B (zh) 2023-03-01
CN114667485A (zh) 2022-06-24
US20210181622A1 (en) 2021-06-17
JP2023506342A (ja) 2023-02-16
US11422460B2 (en) 2022-08-23
KR102874085B1 (ko) 2025-10-22
WO2021118698A1 (en) 2021-06-17
CN114667485B (zh) 2025-08-19
KR20220093169A (ko) 2022-07-05
TW202122936A (zh) 2021-06-16

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