JP7568390B2 - 発光装置 - Google Patents

発光装置 Download PDF

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Publication number
JP7568390B2
JP7568390B2 JP2019171453A JP2019171453A JP7568390B2 JP 7568390 B2 JP7568390 B2 JP 7568390B2 JP 2019171453 A JP2019171453 A JP 2019171453A JP 2019171453 A JP2019171453 A JP 2019171453A JP 7568390 B2 JP7568390 B2 JP 7568390B2
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JP
Japan
Prior art keywords
light
light emitting
transmitting region
emitting device
collimated
Prior art date
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Active
Application number
JP2019171453A
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English (en)
Japanese (ja)
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JP2021048354A (ja
Inventor
章徳 原
利章 山下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2019171453A priority Critical patent/JP7568390B2/ja
Priority to US17/016,202 priority patent/US11444430B2/en
Publication of JP2021048354A publication Critical patent/JP2021048354A/ja
Priority to US17/883,243 priority patent/US11721950B2/en
Priority to US18/333,693 priority patent/US12348001B2/en
Priority to JP2023200313A priority patent/JP7733324B2/ja
Application granted granted Critical
Publication of JP7568390B2 publication Critical patent/JP7568390B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0267—Integrated focusing lens
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0061—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED
    • G02B19/0066—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED in the form of an LED array
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/30—Collimators
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/02—Simple or compound lenses with non-spherical faces
    • G02B3/04—Simple or compound lenses with non-spherical faces with continuous faces that are rotationally symmetrical but deviate from a true sphere, e.g. so called "aspheric" lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0087—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Lenses (AREA)
  • Semiconductor Lasers (AREA)
  • Projection Apparatus (AREA)
  • Transforming Electric Information Into Light Information (AREA)
  • Video Image Reproduction Devices For Color Tv Systems (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Optical Filters (AREA)
JP2019171453A 2019-09-20 2019-09-20 発光装置 Active JP7568390B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2019171453A JP7568390B2 (ja) 2019-09-20 2019-09-20 発光装置
US17/016,202 US11444430B2 (en) 2019-09-20 2020-09-09 Light emission device
US17/883,243 US11721950B2 (en) 2019-09-20 2022-08-08 Light emission device
US18/333,693 US12348001B2 (en) 2019-09-20 2023-06-13 Light emission device
JP2023200313A JP7733324B2 (ja) 2019-09-20 2023-11-28 発光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019171453A JP7568390B2 (ja) 2019-09-20 2019-09-20 発光装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023200313A Division JP7733324B2 (ja) 2019-09-20 2023-11-28 発光装置

Publications (2)

Publication Number Publication Date
JP2021048354A JP2021048354A (ja) 2021-03-25
JP7568390B2 true JP7568390B2 (ja) 2024-10-16

Family

ID=74876658

Family Applications (2)

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JP2019171453A Active JP7568390B2 (ja) 2019-09-20 2019-09-20 発光装置
JP2023200313A Active JP7733324B2 (ja) 2019-09-20 2023-11-28 発光装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023200313A Active JP7733324B2 (ja) 2019-09-20 2023-11-28 発光装置

Country Status (2)

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US (3) US11444430B2 (enExample)
JP (2) JP7568390B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6711333B2 (ja) * 2017-08-16 2020-06-17 日亜化学工業株式会社 発光装置
JP7068560B1 (ja) * 2021-06-14 2022-05-16 三菱電機株式会社 半導体レーザー装置および半導体レーザー装置の製造方法
CN117999437A (zh) * 2021-09-21 2024-05-07 昕诺飞控股有限公司 基于多个光源的均匀性良好的高强度白光源
JP7331902B2 (ja) * 2021-09-22 2023-08-23 カシオ計算機株式会社 光源装置及び投影装置
CN118584738A (zh) * 2023-03-01 2024-09-03 苏州佳世达光电有限公司 光机模组
KR102890691B1 (ko) * 2023-06-08 2025-11-27 주식회사 옵트론텍 발광 장치

Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2014179504A (ja) 2013-03-15 2014-09-25 Stanley Electric Co Ltd 発光装置
JP2016219779A (ja) 2015-05-20 2016-12-22 日亜化学工業株式会社 発光装置
JP2017107776A (ja) 2015-12-10 2017-06-15 パナソニック株式会社 発光装置および照明装置
JP2018120111A (ja) 2017-01-26 2018-08-02 セイコーエプソン株式会社 照明装置及びプロジェクター

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Publication number Priority date Publication date Assignee Title
JP2014179504A (ja) 2013-03-15 2014-09-25 Stanley Electric Co Ltd 発光装置
JP2016219779A (ja) 2015-05-20 2016-12-22 日亜化学工業株式会社 発光装置
JP2017107776A (ja) 2015-12-10 2017-06-15 パナソニック株式会社 発光装置および照明装置
JP2018120111A (ja) 2017-01-26 2018-08-02 セイコーエプソン株式会社 照明装置及びプロジェクター

Also Published As

Publication number Publication date
JP2024037740A (ja) 2024-03-19
JP2021048354A (ja) 2021-03-25
US11721950B2 (en) 2023-08-08
US20220385032A1 (en) 2022-12-01
JP7733324B2 (ja) 2025-09-03
US11444430B2 (en) 2022-09-13
US12348001B2 (en) 2025-07-01
US20210091531A1 (en) 2021-03-25
US20230327399A1 (en) 2023-10-12

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