JP7563851B2 - スピン軌道トルク・デバイスにおけるスイッチング軌道の制御方法、デバイス - Google Patents

スピン軌道トルク・デバイスにおけるスイッチング軌道の制御方法、デバイス Download PDF

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JP7563851B2
JP7563851B2 JP2021574817A JP2021574817A JP7563851B2 JP 7563851 B2 JP7563851 B2 JP 7563851B2 JP 2021574817 A JP2021574817 A JP 2021574817A JP 2021574817 A JP2021574817 A JP 2021574817A JP 7563851 B2 JP7563851 B2 JP 7563851B2
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magnetic
sot
magnetization
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JP2022537980A (ja
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プン、ティモシー
ガルグ、チラグ
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International Business Machines Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/18—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using galvano-magnetic devices, e.g. Hall-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
JP2021574817A 2019-06-20 2020-06-05 スピン軌道トルク・デバイスにおけるスイッチング軌道の制御方法、デバイス Active JP7563851B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/447,753 2019-06-20
US16/447,753 US10916282B2 (en) 2019-06-20 2019-06-20 Control of switching trajectory in spin orbit torque devices by micromagnetic configuration
PCT/IB2020/055307 WO2020254905A1 (en) 2019-06-20 2020-06-05 Control of switching trajectory in spin orbit torque devices

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JP2022537980A JP2022537980A (ja) 2022-08-31
JP2022537980A5 JP2022537980A5 (https=) 2022-11-22
JP7563851B2 true JP7563851B2 (ja) 2024-10-08

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US (1) US10916282B2 (https=)
JP (1) JP7563851B2 (https=)
CN (1) CN113795884A (https=)
DE (1) DE112020002929T5 (https=)
GB (1) GB2598699B (https=)
WO (1) WO2020254905A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019155957A1 (ja) * 2018-02-06 2019-08-15 国立大学法人東北大学 磁気抵抗効果素子、回路装置及び回路ユニット
EP3839955B1 (en) * 2019-12-18 2025-03-26 Imec VZW Dual stack sot
CN113451356B (zh) * 2021-02-10 2022-12-20 北京航空航天大学 磁性随机存储单元、存储器及设备
CN113611793B (zh) * 2021-08-03 2023-10-03 致真存储(北京)科技有限公司 一种磁性随机存储器
EP4177892B1 (en) * 2021-11-03 2024-09-11 Imec VZW A magnetic domain-wall based memory device with a track-crossing architecture

Citations (5)

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JP2012500446A (ja) 2008-08-15 2012-01-05 クゥアルコム・インコーポレイテッド ゲートレベル再構成可能な磁気論理
JP2017112358A (ja) 2015-10-22 2017-06-22 エイチジーエスティーネザーランドビーブイ 下部固定ｓｏｔ−ｍｒａｍビット構造及び製造の方法
CN107732005A (zh) 2017-10-11 2018-02-23 华中科技大学 一种扩展磁性隧道结、自旋多数门器件及逻辑电路
JP2019046976A (ja) 2017-09-01 2019-03-22 Tdk株式会社 スピン流磁化反転素子、磁気メモリ
JP2019054154A (ja) 2017-09-15 2019-04-04 株式会社東芝 磁気メモリ

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FR3031622B1 (fr) * 2015-01-14 2018-02-16 Centre National De La Recherche Scientifique Point memoire magnetique
US11257862B2 (en) * 2015-01-30 2022-02-22 Yimin Guo MRAM having spin hall effect writing and method of making the same
US9589619B2 (en) 2015-02-09 2017-03-07 Qualcomm Incorporated Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy
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FR3042634B1 (fr) * 2015-10-16 2017-12-15 Centre Nat Rech Scient Point memoire magnetique
US9830966B2 (en) 2015-10-29 2017-11-28 Western Digital Technologies, Inc. Three terminal SOT memory cell with anomalous Hall effect
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GB2598699B (en) 2022-07-06
GB2598699A (en) 2022-03-09
JP2022537980A (ja) 2022-08-31
GB202200048D0 (en) 2022-02-16
US10916282B2 (en) 2021-02-09
DE112020002929T5 (de) 2022-03-03
CN113795884A (zh) 2021-12-14
WO2020254905A1 (en) 2020-12-24
US20200402558A1 (en) 2020-12-24

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