DE112020002929T5 - Steuerung der schalttrajektorie in spin-orbit-drehmoment-einheiten - Google Patents

Steuerung der schalttrajektorie in spin-orbit-drehmoment-einheiten Download PDF

Info

Publication number
DE112020002929T5
DE112020002929T5 DE112020002929.8T DE112020002929T DE112020002929T5 DE 112020002929 T5 DE112020002929 T5 DE 112020002929T5 DE 112020002929 T DE112020002929 T DE 112020002929T DE 112020002929 T5 DE112020002929 T5 DE 112020002929T5
Authority
DE
Germany
Prior art keywords
layer
magnetic
unit
sot
mtj
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112020002929.8T
Other languages
German (de)
English (en)
Inventor
Timothy Phung
Chirag Garg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE112020002929T5 publication Critical patent/DE112020002929T5/de
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/18—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using galvano-magnetic devices, e.g. Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
DE112020002929.8T 2019-06-20 2020-06-05 Steuerung der schalttrajektorie in spin-orbit-drehmoment-einheiten Pending DE112020002929T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/447,753 2019-06-20
US16/447,753 US10916282B2 (en) 2019-06-20 2019-06-20 Control of switching trajectory in spin orbit torque devices by micromagnetic configuration
PCT/IB2020/055307 WO2020254905A1 (en) 2019-06-20 2020-06-05 Control of switching trajectory in spin orbit torque devices

Publications (1)

Publication Number Publication Date
DE112020002929T5 true DE112020002929T5 (de) 2022-03-03

Family

ID=74037843

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112020002929.8T Pending DE112020002929T5 (de) 2019-06-20 2020-06-05 Steuerung der schalttrajektorie in spin-orbit-drehmoment-einheiten

Country Status (6)

Country Link
US (1) US10916282B2 (https=)
JP (1) JP7563851B2 (https=)
CN (1) CN113795884A (https=)
DE (1) DE112020002929T5 (https=)
GB (1) GB2598699B (https=)
WO (1) WO2020254905A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019155957A1 (ja) * 2018-02-06 2019-08-15 国立大学法人東北大学 磁気抵抗効果素子、回路装置及び回路ユニット
EP3839955B1 (en) * 2019-12-18 2025-03-26 Imec VZW Dual stack sot
CN113451356B (zh) * 2021-02-10 2022-12-20 北京航空航天大学 磁性随机存储单元、存储器及设备
CN113611793B (zh) * 2021-08-03 2023-10-03 致真存储(北京)科技有限公司 一种磁性随机存储器
EP4177892B1 (en) * 2021-11-03 2024-09-11 Imec VZW A magnetic domain-wall based memory device with a track-crossing architecture

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8295082B2 (en) 2008-08-15 2012-10-23 Qualcomm Incorporated Gate level reconfigurable magnetic logic
US9343658B2 (en) 2013-10-30 2016-05-17 The Regents Of The University Of California Magnetic memory bits with perpendicular magnetization switched by current-induced spin-orbit torques
FR3031622B1 (fr) * 2015-01-14 2018-02-16 Centre National De La Recherche Scientifique Point memoire magnetique
US11257862B2 (en) * 2015-01-30 2022-02-22 Yimin Guo MRAM having spin hall effect writing and method of making the same
US9589619B2 (en) 2015-02-09 2017-03-07 Qualcomm Incorporated Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy
KR101729383B1 (ko) 2015-03-18 2017-04-25 한양대학교 산학협력단 스핀-오비트 토크를 이용한 자성소자
FR3042634B1 (fr) * 2015-10-16 2017-12-15 Centre Nat Rech Scient Point memoire magnetique
US9768229B2 (en) 2015-10-22 2017-09-19 Western Digital Technologies, Inc. Bottom pinned SOT-MRAM bit structure and method of fabrication
US9830966B2 (en) 2015-10-29 2017-11-28 Western Digital Technologies, Inc. Three terminal SOT memory cell with anomalous Hall effect
US10333058B2 (en) * 2016-03-17 2019-06-25 Cornell University Nanosecond-timescale low-error switching of 3-terminal magnetic tunnel junction circuits through dynamic in-plane-field assisted spin-hall effect
JP6374452B2 (ja) * 2016-08-04 2018-08-15 株式会社東芝 磁気メモリ
US10381060B2 (en) 2016-08-25 2019-08-13 Qualcomm Incorporated High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array
KR101825318B1 (ko) 2017-01-03 2018-02-05 고려대학교 산학협력단 스핀필터 구조체를 포함하는 자기 터널 접합 소자
JP2019046976A (ja) 2017-09-01 2019-03-22 Tdk株式会社 スピン流磁化反転素子、磁気メモリ
JP6815297B2 (ja) * 2017-09-15 2021-01-20 株式会社東芝 磁気メモリ
CN107732005B (zh) 2017-10-11 2020-08-18 华中科技大学 一种自旋多数门器件及逻辑电路
US10276784B1 (en) 2017-10-30 2019-04-30 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and associated operating and fabricating method
CN109166962B (zh) * 2018-08-09 2020-10-20 北京航空航天大学 一种互补型磁性存储单元
US11594575B2 (en) * 2018-08-31 2023-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetic tunnel junction structures and related methods
KR102572158B1 (ko) * 2018-09-12 2023-08-30 삼성전자주식회사 자기 기억 소자
US11165012B2 (en) * 2018-10-29 2021-11-02 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetic device and magnetic random access memory
US11605670B2 (en) * 2018-10-30 2023-03-14 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetic tunnel junction structures and related methods
US11917925B2 (en) * 2020-01-23 2024-02-27 Everspin Technologies, Inc. Magnetoresistive devices and methods therefor

Also Published As

Publication number Publication date
GB2598699B (en) 2022-07-06
GB2598699A (en) 2022-03-09
JP2022537980A (ja) 2022-08-31
GB202200048D0 (en) 2022-02-16
US10916282B2 (en) 2021-02-09
CN113795884A (zh) 2021-12-14
JP7563851B2 (ja) 2024-10-08
WO2020254905A1 (en) 2020-12-24
US20200402558A1 (en) 2020-12-24

Similar Documents

Publication Publication Date Title
DE112020002929T5 (de) Steuerung der schalttrajektorie in spin-orbit-drehmoment-einheiten
DE102015121753B4 (de) Magnetsensorbauelement und Verfahren für ein Magnetsensorbauelement mit einer magnetoresistiven Struktur
DE112011103750B4 (de) Nichtflüchtiger Magnettunnelübergang-Transistor
DE69735780T2 (de) Ferromagnetischer Speicher vom fip-flop Typ
DE60309190T2 (de) Magnetelement mit spintransfer und mram-bauelement mit dem magnetelement
DE60223573T2 (de) Magnetische speicheranordnung beschreibbar durch spin-polarisierten strom unter benützung von amorphen ferrimagnetischen legierungen, und schreibverfahren in dieser speicheranordnung
DE112011102674B4 (de) Verfahren und System zum Vorsehen von magnetischen Tunnelkontaktelementen, welche eine biaxiale Anisotropie haben
DE602005004831T2 (de) Magnetische Multibit-Speicherzellenvorrichtung mit wahlfreiem Zugriff
DE102019116096A1 (de) Senkrechte sot-mram-speicherzelle unter verwendung von spin-swapping- induziertem spinstrom
DE102016006651A1 (de) Schaltvorrichtung mit spannungsgesteuerter magnetanisotropie, die einen externen ferromagnetischen vormagnetisierungsfilm verwendet
DE102016014924A1 (de) Spin-Bahn-Drehmoment-Bitentwurf für eine verbesserte Schalteffizienz
DE112018000840T5 (de) Spin-bahn-drehmoment-mram-speicherzelle mit verbesserter thermischer stabilität
DE112011101184B4 (de) Magnetische Direktzugriffsspeichereinheit und Verfahren zum Herstellen einer magnetischen Direktzugriffsspeichereinheit
DE112013006117T5 (de) Senkrechtes Spin-Transfer-Torque-Speicherbauelement (STTM-Bauelement) mit versetzten Zellen und Verfahren zu deren Ausbildung
DE60203677T2 (de) Verfahren zum Ändern der Schaltfeldeigenschaften von magnetischen Tunnelübergängen
DE112012002231T5 (de) Transistoreinheiten mit magnetischem Tunnelübergang
DE102005062769B4 (de) Hybrid-Speicherzelle für durch spinpolarisierten Elektronenstrom induziertes Schalten und Schreib/Leseprozess, der eine derartige Speicherzelle verwendet
DE112018004229T5 (de) Freie verbundschicht für magnetoresistiven direktzugriffsspeicher
DE602004009443T2 (de) Kombination von eigen- und formanisotropie zwecks reduzierter umschaltfeldfluktuationen
DE102006008264A1 (de) MRAM Zelle mit Domänenwandumschaltung und Feldauswahl
WO2001018816A1 (de) Speicherzellenanordnung und verfahren zu deren betrieb
DE10155424B4 (de) Verfahren zur homogenen Magnetisierung eines austauschgekoppelten Schichtsystems einer digitalen magnetischen Speicherzelleneinrichtung
DE102006036299A1 (de) Verfahren zum Schalten magnetischer Momente in einem magnetoresistiven Schreib-Lese-Speicher mit niedrigem Strom
DE102021118833A1 (de) Vorrichtung und verfahren zur erzeugung von magnetischen wirbel-spinstrukturen
DE10308640B4 (de) Magneto-resistives Schichtelement, insbesondere TMR-Zelle

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0043000000

Ipc: H10N0050000000

R016 Response to examination communication