JP2022537980A5 - - Google Patents
Info
- Publication number
- JP2022537980A5 JP2022537980A5 JP2021574817A JP2021574817A JP2022537980A5 JP 2022537980 A5 JP2022537980 A5 JP 2022537980A5 JP 2021574817 A JP2021574817 A JP 2021574817A JP 2021574817 A JP2021574817 A JP 2021574817A JP 2022537980 A5 JP2022537980 A5 JP 2022537980A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- magnetic
- sot
- mtj
- magnetic layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/447,753 | 2019-06-20 | ||
| US16/447,753 US10916282B2 (en) | 2019-06-20 | 2019-06-20 | Control of switching trajectory in spin orbit torque devices by micromagnetic configuration |
| PCT/IB2020/055307 WO2020254905A1 (en) | 2019-06-20 | 2020-06-05 | Control of switching trajectory in spin orbit torque devices |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022537980A JP2022537980A (ja) | 2022-08-31 |
| JP2022537980A5 true JP2022537980A5 (https=) | 2022-11-22 |
| JP7563851B2 JP7563851B2 (ja) | 2024-10-08 |
Family
ID=74037843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021574817A Active JP7563851B2 (ja) | 2019-06-20 | 2020-06-05 | スピン軌道トルク・デバイスにおけるスイッチング軌道の制御方法、デバイス |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10916282B2 (https=) |
| JP (1) | JP7563851B2 (https=) |
| CN (1) | CN113795884A (https=) |
| DE (1) | DE112020002929T5 (https=) |
| GB (1) | GB2598699B (https=) |
| WO (1) | WO2020254905A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019155957A1 (ja) * | 2018-02-06 | 2019-08-15 | 国立大学法人東北大学 | 磁気抵抗効果素子、回路装置及び回路ユニット |
| EP3839955B1 (en) * | 2019-12-18 | 2025-03-26 | Imec VZW | Dual stack sot |
| CN113451356B (zh) * | 2021-02-10 | 2022-12-20 | 北京航空航天大学 | 磁性随机存储单元、存储器及设备 |
| CN113611793B (zh) * | 2021-08-03 | 2023-10-03 | 致真存储(北京)科技有限公司 | 一种磁性随机存储器 |
| EP4177892B1 (en) * | 2021-11-03 | 2024-09-11 | Imec VZW | A magnetic domain-wall based memory device with a track-crossing architecture |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8295082B2 (en) | 2008-08-15 | 2012-10-23 | Qualcomm Incorporated | Gate level reconfigurable magnetic logic |
| US9343658B2 (en) | 2013-10-30 | 2016-05-17 | The Regents Of The University Of California | Magnetic memory bits with perpendicular magnetization switched by current-induced spin-orbit torques |
| FR3031622B1 (fr) * | 2015-01-14 | 2018-02-16 | Centre National De La Recherche Scientifique | Point memoire magnetique |
| US11257862B2 (en) * | 2015-01-30 | 2022-02-22 | Yimin Guo | MRAM having spin hall effect writing and method of making the same |
| US9589619B2 (en) | 2015-02-09 | 2017-03-07 | Qualcomm Incorporated | Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy |
| KR101729383B1 (ko) | 2015-03-18 | 2017-04-25 | 한양대학교 산학협력단 | 스핀-오비트 토크를 이용한 자성소자 |
| FR3042634B1 (fr) * | 2015-10-16 | 2017-12-15 | Centre Nat Rech Scient | Point memoire magnetique |
| US9768229B2 (en) | 2015-10-22 | 2017-09-19 | Western Digital Technologies, Inc. | Bottom pinned SOT-MRAM bit structure and method of fabrication |
| US9830966B2 (en) | 2015-10-29 | 2017-11-28 | Western Digital Technologies, Inc. | Three terminal SOT memory cell with anomalous Hall effect |
| US10333058B2 (en) * | 2016-03-17 | 2019-06-25 | Cornell University | Nanosecond-timescale low-error switching of 3-terminal magnetic tunnel junction circuits through dynamic in-plane-field assisted spin-hall effect |
| JP6374452B2 (ja) * | 2016-08-04 | 2018-08-15 | 株式会社東芝 | 磁気メモリ |
| US10381060B2 (en) | 2016-08-25 | 2019-08-13 | Qualcomm Incorporated | High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array |
| KR101825318B1 (ko) | 2017-01-03 | 2018-02-05 | 고려대학교 산학협력단 | 스핀필터 구조체를 포함하는 자기 터널 접합 소자 |
| JP2019046976A (ja) | 2017-09-01 | 2019-03-22 | Tdk株式会社 | スピン流磁化反転素子、磁気メモリ |
| JP6815297B2 (ja) * | 2017-09-15 | 2021-01-20 | 株式会社東芝 | 磁気メモリ |
| CN107732005B (zh) | 2017-10-11 | 2020-08-18 | 华中科技大学 | 一种自旋多数门器件及逻辑电路 |
| US10276784B1 (en) | 2017-10-30 | 2019-04-30 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and associated operating and fabricating method |
| CN109166962B (zh) * | 2018-08-09 | 2020-10-20 | 北京航空航天大学 | 一种互补型磁性存储单元 |
| US11594575B2 (en) * | 2018-08-31 | 2023-02-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Magnetic tunnel junction structures and related methods |
| KR102572158B1 (ko) * | 2018-09-12 | 2023-08-30 | 삼성전자주식회사 | 자기 기억 소자 |
| US11165012B2 (en) * | 2018-10-29 | 2021-11-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Magnetic device and magnetic random access memory |
| US11605670B2 (en) * | 2018-10-30 | 2023-03-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Magnetic tunnel junction structures and related methods |
| US11917925B2 (en) * | 2020-01-23 | 2024-02-27 | Everspin Technologies, Inc. | Magnetoresistive devices and methods therefor |
-
2019
- 2019-06-20 US US16/447,753 patent/US10916282B2/en active Active
-
2020
- 2020-06-05 CN CN202080034465.2A patent/CN113795884A/zh active Pending
- 2020-06-05 DE DE112020002929.8T patent/DE112020002929T5/de active Pending
- 2020-06-05 GB GB2200048.3A patent/GB2598699B/en active Active
- 2020-06-05 WO PCT/IB2020/055307 patent/WO2020254905A1/en not_active Ceased
- 2020-06-05 JP JP2021574817A patent/JP7563851B2/ja active Active
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