JP7548219B2 - 化合物半導体層積層体及びその形成方法、並びに、発光デバイス - Google Patents

化合物半導体層積層体及びその形成方法、並びに、発光デバイス Download PDF

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JP7548219B2
JP7548219B2 JP2021514859A JP2021514859A JP7548219B2 JP 7548219 B2 JP7548219 B2 JP 7548219B2 JP 2021514859 A JP2021514859 A JP 2021514859A JP 2021514859 A JP2021514859 A JP 2021514859A JP 7548219 B2 JP7548219 B2 JP 7548219B2
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layer
compound semiconductor
semiconductor layer
substrate
top surface
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邦彦 田才
博 中島
秀和 川西
克典 簗嶋
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Sony Corp
Sony Group Corp
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
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    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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    • H01S5/00—Semiconductor lasers
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    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
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    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
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    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
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    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
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    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
JP2021514859A 2019-04-19 2020-03-31 化合物半導体層積層体及びその形成方法、並びに、発光デバイス Active JP7548219B2 (ja)

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JP2019079978 2019-04-19
PCT/JP2020/014796 WO2020213388A1 (ja) 2019-04-19 2020-03-31 化合物半導体層積層体及びその形成方法、並びに、発光デバイス

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003158295A (ja) 2001-11-22 2003-05-30 Showa Denko Kk ＧａＮ系半導体薄膜、その製造方法、半導体発光素子
JP2013074278A (ja) 2011-09-29 2013-04-22 Panasonic Corp 窒化物半導体基板及びその製造方法、並びにそれを用いた窒化物半導体発光素子

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3847000B2 (ja) * 1997-11-26 2006-11-15 日亜化学工業株式会社 窒化物半導体基板上に活性層を備えた窒化物半導体層を有する窒化物半導体素子及びその成長方法
US6939730B2 (en) * 2001-04-24 2005-09-06 Sony Corporation Nitride semiconductor, semiconductor device, and method of manufacturing the same
JP3548735B2 (ja) * 2001-06-29 2004-07-28 士郎 酒井 窒化ガリウム系化合物半導体の製造方法
JP4229005B2 (ja) * 2003-06-26 2009-02-25 住友電気工業株式会社 ＧａＮ基板及びその製造方法、並びに窒化物半導体素子
JP5060055B2 (ja) * 2006-02-09 2012-10-31 浜松ホトニクス株式会社 窒化化合物半導体基板及び半導体デバイス

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003158295A (ja) 2001-11-22 2003-05-30 Showa Denko Kk ＧａＮ系半導体薄膜、その製造方法、半導体発光素子
JP2013074278A (ja) 2011-09-29 2013-04-22 Panasonic Corp 窒化物半導体基板及びその製造方法、並びにそれを用いた窒化物半導体発光素子

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US20220190555A1 (en) 2022-06-16
EP3958333B1 (en) 2025-01-29
EP3958333A1 (en) 2022-02-23
EP3958333A4 (en) 2022-06-08
WO2020213388A1 (ja) 2020-10-22

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