JP7530888B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7530888B2
JP7530888B2 JP2021518220A JP2021518220A JP7530888B2 JP 7530888 B2 JP7530888 B2 JP 7530888B2 JP 2021518220 A JP2021518220 A JP 2021518220A JP 2021518220 A JP2021518220 A JP 2021518220A JP 7530888 B2 JP7530888 B2 JP 7530888B2
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oxide
transistor
insulator
conductor
oxygen
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Japanese (ja)
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JPWO2020225641A5 (enExample
JPWO2020225641A1 (enExample
Inventor
寛司 國武
和晃 大嶋
一樹 津田
知昭 熱海
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JPWO2020225641A1 publication Critical patent/JPWO2020225641A1/ja
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Priority to JP2024121902A priority Critical patent/JP7746479B2/ja
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Priority to JP2025153783A priority patent/JP2026001010A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
    • H03K3/03—Astable circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/427—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer having different thicknesses of the semiconductor bodies in different TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2021518220A 2019-05-08 2020-04-27 半導体装置 Active JP7530888B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024121902A JP7746479B2 (ja) 2019-05-08 2024-07-29 半導体装置
JP2025153783A JP2026001010A (ja) 2019-05-08 2025-09-17 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019088132 2019-05-08
JP2019088132 2019-05-08
PCT/IB2020/053916 WO2020225641A1 (ja) 2019-05-08 2020-04-27 半導体装置

Related Child Applications (1)

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JP2024121902A Division JP7746479B2 (ja) 2019-05-08 2024-07-29 半導体装置

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JPWO2020225641A1 JPWO2020225641A1 (enExample) 2020-11-12
JPWO2020225641A5 JPWO2020225641A5 (enExample) 2023-05-01
JP7530888B2 true JP7530888B2 (ja) 2024-08-08

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JP2021518220A Active JP7530888B2 (ja) 2019-05-08 2020-04-27 半導体装置
JP2024121902A Active JP7746479B2 (ja) 2019-05-08 2024-07-29 半導体装置
JP2025153783A Pending JP2026001010A (ja) 2019-05-08 2025-09-17 半導体装置

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JP2025153783A Pending JP2026001010A (ja) 2019-05-08 2025-09-17 半導体装置

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US (2) US20220208794A1 (enExample)
JP (3) JP7530888B2 (enExample)
KR (1) KR20220006071A (enExample)
CN (1) CN113767479A (enExample)
WO (1) WO2020225641A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7352058B2 (ja) * 2017-11-01 2023-09-28 セントラル硝子株式会社 炭化ケイ素単結晶の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015079949A (ja) 2013-09-13 2015-04-23 株式会社半導体エネルギー研究所 トランジスタ、クロックドインバータ回路、順序回路、および順序回路を備えた半導体装置
JP2016019235A (ja) 2014-07-10 2016-02-01 株式会社半導体理工学研究センター 増幅回路、ｃｍｏｓインバータ増幅回路、比較回路、δςアナログデジタル変換器、及び半導体装置
JP2016032297A (ja) 2014-07-25 2016-03-07 株式会社半導体エネルギー研究所 発振回路、および、それを有する半導体装置
US20180246160A1 (en) 2017-02-24 2018-08-30 Semiconductor Manufacturing International (Shanghai) Corporation Detection method and detection device of process corner of mos transistor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4985643A (en) * 1988-06-24 1991-01-15 National Semiconductor Corporation Speed enhancement technique for CMOS circuits
WO2011103558A1 (en) 2010-02-22 2011-08-25 Nantero, Inc. Logic elements comprising carbon nanotube field effect transistor (cntfet) devices and methods of making same
US20130207102A1 (en) 2012-02-15 2013-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8988152B2 (en) 2012-02-29 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10038402B2 (en) 2015-10-30 2018-07-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP2018101884A (ja) 2016-12-20 2018-06-28 株式会社半導体エネルギー研究所 映像再生装置、その動作方法および電子機器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015079949A (ja) 2013-09-13 2015-04-23 株式会社半導体エネルギー研究所 トランジスタ、クロックドインバータ回路、順序回路、および順序回路を備えた半導体装置
JP2016019235A (ja) 2014-07-10 2016-02-01 株式会社半導体理工学研究センター 増幅回路、ｃｍｏｓインバータ増幅回路、比較回路、δςアナログデジタル変換器、及び半導体装置
JP2016032297A (ja) 2014-07-25 2016-03-07 株式会社半導体エネルギー研究所 発振回路、および、それを有する半導体装置
US20180246160A1 (en) 2017-02-24 2018-08-30 Semiconductor Manufacturing International (Shanghai) Corporation Detection method and detection device of process corner of mos transistor

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JP2026001010A (ja) 2026-01-06
US20220208794A1 (en) 2022-06-30
JP7746479B2 (ja) 2025-09-30
WO2020225641A1 (ja) 2020-11-12
US20250261448A1 (en) 2025-08-14
JP2024149532A (ja) 2024-10-18
JPWO2020225641A1 (enExample) 2020-11-12
KR20220006071A (ko) 2022-01-14
CN113767479A (zh) 2021-12-07

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