JPWO2020225641A5 - - Google Patents
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- Publication number
- JPWO2020225641A5 JPWO2020225641A5 JP2021518220A JP2021518220A JPWO2020225641A5 JP WO2020225641 A5 JPWO2020225641 A5 JP WO2020225641A5 JP 2021518220 A JP2021518220 A JP 2021518220A JP 2021518220 A JP2021518220 A JP 2021518220A JP WO2020225641 A5 JPWO2020225641 A5 JP WO2020225641A5
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- electrically connected
- terminal
- semiconductor device
- stage inverter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 10
- VUFNLQXQSDUXKB-DOFZRALJSA-N 2-[4-[4-[bis(2-chloroethyl)amino]phenyl]butanoyloxy]ethyl (5z,8z,11z,14z)-icosa-5,8,11,14-tetraenoate Chemical group CCCCC\C=C/C\C=C/C\C=C/C\C=C/CCCC(=O)OCCOC(=O)CCCC1=CC=C(N(CCCl)CCCl)C=C1 VUFNLQXQSDUXKB-DOFZRALJSA-N 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024121902A JP7746479B2 (ja) | 2019-05-08 | 2024-07-29 | 半導体装置 |
| JP2025153783A JP2026001010A (ja) | 2019-05-08 | 2025-09-17 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019088132 | 2019-05-08 | ||
| JP2019088132 | 2019-05-08 | ||
| PCT/IB2020/053916 WO2020225641A1 (ja) | 2019-05-08 | 2020-04-27 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024121902A Division JP7746479B2 (ja) | 2019-05-08 | 2024-07-29 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020225641A1 JPWO2020225641A1 (enExample) | 2020-11-12 |
| JPWO2020225641A5 true JPWO2020225641A5 (enExample) | 2023-05-01 |
| JP7530888B2 JP7530888B2 (ja) | 2024-08-08 |
Family
ID=73051034
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021518220A Active JP7530888B2 (ja) | 2019-05-08 | 2020-04-27 | 半導体装置 |
| JP2024121902A Active JP7746479B2 (ja) | 2019-05-08 | 2024-07-29 | 半導体装置 |
| JP2025153783A Pending JP2026001010A (ja) | 2019-05-08 | 2025-09-17 | 半導体装置 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024121902A Active JP7746479B2 (ja) | 2019-05-08 | 2024-07-29 | 半導体装置 |
| JP2025153783A Pending JP2026001010A (ja) | 2019-05-08 | 2025-09-17 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US20220208794A1 (enExample) |
| JP (3) | JP7530888B2 (enExample) |
| KR (1) | KR20220006071A (enExample) |
| CN (1) | CN113767479A (enExample) |
| WO (1) | WO2020225641A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7352058B2 (ja) * | 2017-11-01 | 2023-09-28 | セントラル硝子株式会社 | 炭化ケイ素単結晶の製造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4985643A (en) * | 1988-06-24 | 1991-01-15 | National Semiconductor Corporation | Speed enhancement technique for CMOS circuits |
| WO2011103558A1 (en) | 2010-02-22 | 2011-08-25 | Nantero, Inc. | Logic elements comprising carbon nanotube field effect transistor (cntfet) devices and methods of making same |
| US20130207102A1 (en) | 2012-02-15 | 2013-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8988152B2 (en) | 2012-02-29 | 2015-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9461126B2 (en) * | 2013-09-13 | 2016-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, clocked inverter circuit, sequential circuit, and semiconductor device including sequential circuit |
| JP2016019235A (ja) * | 2014-07-10 | 2016-02-01 | 株式会社半導体理工学研究センター | 増幅回路、ｃｍｏｓインバータ増幅回路、比較回路、δςアナログデジタル変換器、及び半導体装置 |
| KR102352633B1 (ko) * | 2014-07-25 | 2022-01-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발진 회로 및 그것을 포함하는 반도체 장치 |
| US10038402B2 (en) | 2015-10-30 | 2018-07-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| JP2018101884A (ja) | 2016-12-20 | 2018-06-28 | 株式会社半導体エネルギー研究所 | 映像再生装置、その動作方法および電子機器 |
| CN108508340B (zh) * | 2017-02-24 | 2021-02-02 | 中芯国际集成电路制造(上海)有限公司 | 一种mos管的工艺角检测方法 |
-
2020
- 2020-04-27 US US17/606,533 patent/US20220208794A1/en not_active Abandoned
- 2020-04-27 JP JP2021518220A patent/JP7530888B2/ja active Active
- 2020-04-27 CN CN202080032977.5A patent/CN113767479A/zh active Pending
- 2020-04-27 KR KR1020217037201A patent/KR20220006071A/ko active Pending
- 2020-04-27 WO PCT/IB2020/053916 patent/WO2020225641A1/ja not_active Ceased
-
2024
- 2024-07-29 JP JP2024121902A patent/JP7746479B2/ja active Active
-
2025
- 2025-04-03 US US19/169,056 patent/US20250261448A1/en active Pending
- 2025-09-17 JP JP2025153783A patent/JP2026001010A/ja active Pending
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