JPWO2020225641A1 - - Google Patents
Info
- Publication number
- JPWO2020225641A1 JPWO2020225641A1 JP2021518220A JP2021518220A JPWO2020225641A1 JP WO2020225641 A1 JPWO2020225641 A1 JP WO2020225641A1 JP 2021518220 A JP2021518220 A JP 2021518220A JP 2021518220 A JP2021518220 A JP 2021518220A JP WO2020225641 A1 JPWO2020225641 A1 JP WO2020225641A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
- H03K3/03—Astable circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/427—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer having different thicknesses of the semiconductor bodies in different TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
Landscapes
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024121902A JP7746479B2 (ja) | 2019-05-08 | 2024-07-29 | 半導体装置 |
| JP2025153783A JP2026001010A (ja) | 2019-05-08 | 2025-09-17 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019088132 | 2019-05-08 | ||
| JP2019088132 | 2019-05-08 | ||
| PCT/IB2020/053916 WO2020225641A1 (ja) | 2019-05-08 | 2020-04-27 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024121902A Division JP7746479B2 (ja) | 2019-05-08 | 2024-07-29 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020225641A1 true JPWO2020225641A1 (enExample) | 2020-11-12 |
| JPWO2020225641A5 JPWO2020225641A5 (enExample) | 2023-05-01 |
| JP7530888B2 JP7530888B2 (ja) | 2024-08-08 |
Family
ID=73051034
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021518220A Active JP7530888B2 (ja) | 2019-05-08 | 2020-04-27 | 半導体装置 |
| JP2024121902A Active JP7746479B2 (ja) | 2019-05-08 | 2024-07-29 | 半導体装置 |
| JP2025153783A Pending JP2026001010A (ja) | 2019-05-08 | 2025-09-17 | 半導体装置 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024121902A Active JP7746479B2 (ja) | 2019-05-08 | 2024-07-29 | 半導体装置 |
| JP2025153783A Pending JP2026001010A (ja) | 2019-05-08 | 2025-09-17 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US20220208794A1 (enExample) |
| JP (3) | JP7530888B2 (enExample) |
| KR (1) | KR20220006071A (enExample) |
| CN (1) | CN113767479A (enExample) |
| WO (1) | WO2020225641A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7352058B2 (ja) * | 2017-11-01 | 2023-09-28 | セントラル硝子株式会社 | 炭化ケイ素単結晶の製造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015079949A (ja) * | 2013-09-13 | 2015-04-23 | 株式会社半導体エネルギー研究所 | トランジスタ、クロックドインバータ回路、順序回路、および順序回路を備えた半導体装置 |
| JP2016019235A (ja) * | 2014-07-10 | 2016-02-01 | 株式会社半導体理工学研究センター | 増幅回路、ｃｍｏｓインバータ増幅回路、比較回路、δςアナログデジタル変換器、及び半導体装置 |
| JP2016032297A (ja) * | 2014-07-25 | 2016-03-07 | 株式会社半導体エネルギー研究所 | 発振回路、および、それを有する半導体装置 |
| US20180246160A1 (en) * | 2017-02-24 | 2018-08-30 | Semiconductor Manufacturing International (Shanghai) Corporation | Detection method and detection device of process corner of mos transistor |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4985643A (en) * | 1988-06-24 | 1991-01-15 | National Semiconductor Corporation | Speed enhancement technique for CMOS circuits |
| WO2011103558A1 (en) | 2010-02-22 | 2011-08-25 | Nantero, Inc. | Logic elements comprising carbon nanotube field effect transistor (cntfet) devices and methods of making same |
| US20130207102A1 (en) | 2012-02-15 | 2013-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8988152B2 (en) | 2012-02-29 | 2015-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US10038402B2 (en) | 2015-10-30 | 2018-07-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| JP2018101884A (ja) | 2016-12-20 | 2018-06-28 | 株式会社半導体エネルギー研究所 | 映像再生装置、その動作方法および電子機器 |
-
2020
- 2020-04-27 US US17/606,533 patent/US20220208794A1/en not_active Abandoned
- 2020-04-27 JP JP2021518220A patent/JP7530888B2/ja active Active
- 2020-04-27 CN CN202080032977.5A patent/CN113767479A/zh active Pending
- 2020-04-27 KR KR1020217037201A patent/KR20220006071A/ko active Pending
- 2020-04-27 WO PCT/IB2020/053916 patent/WO2020225641A1/ja not_active Ceased
-
2024
- 2024-07-29 JP JP2024121902A patent/JP7746479B2/ja active Active
-
2025
- 2025-04-03 US US19/169,056 patent/US20250261448A1/en active Pending
- 2025-09-17 JP JP2025153783A patent/JP2026001010A/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015079949A (ja) * | 2013-09-13 | 2015-04-23 | 株式会社半導体エネルギー研究所 | トランジスタ、クロックドインバータ回路、順序回路、および順序回路を備えた半導体装置 |
| JP2016019235A (ja) * | 2014-07-10 | 2016-02-01 | 株式会社半導体理工学研究センター | 増幅回路、ｃｍｏｓインバータ増幅回路、比較回路、δςアナログデジタル変換器、及び半導体装置 |
| JP2016032297A (ja) * | 2014-07-25 | 2016-03-07 | 株式会社半導体エネルギー研究所 | 発振回路、および、それを有する半導体装置 |
| US20180246160A1 (en) * | 2017-02-24 | 2018-08-30 | Semiconductor Manufacturing International (Shanghai) Corporation | Detection method and detection device of process corner of mos transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2026001010A (ja) | 2026-01-06 |
| US20220208794A1 (en) | 2022-06-30 |
| JP7746479B2 (ja) | 2025-09-30 |
| WO2020225641A1 (ja) | 2020-11-12 |
| JP7530888B2 (ja) | 2024-08-08 |
| US20250261448A1 (en) | 2025-08-14 |
| JP2024149532A (ja) | 2024-10-18 |
| KR20220006071A (ko) | 2022-01-14 |
| CN113767479A (zh) | 2021-12-07 |
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