JP7513219B1 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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JP7513219B1
JP7513219B1 JP2023570418A JP2023570418A JP7513219B1 JP 7513219 B1 JP7513219 B1 JP 7513219B1 JP 2023570418 A JP2023570418 A JP 2023570418A JP 2023570418 A JP2023570418 A JP 2023570418A JP 7513219 B1 JP7513219 B1 JP 7513219B1
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JPWO2025017892A1 (https=
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宣卓 加茂
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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JP2023570418A 2023-07-20 2023-07-20 半導体装置およびその製造方法 Active JP7513219B1 (ja)

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PCT/JP2023/026521 WO2025017892A1 (ja) 2023-07-20 2023-07-20 半導体装置およびその製造方法

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JP7513219B1 true JP7513219B1 (ja) 2024-07-09
JPWO2025017892A1 JPWO2025017892A1 (https=) 2025-01-23
JPWO2025017892A5 JPWO2025017892A5 (https=) 2025-06-24

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000021897A (ja) * 1998-06-29 2000-01-21 Toshiba Corp 電界効果トランジスタおよびその製造方法
JP2013062365A (ja) * 2011-09-13 2013-04-04 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2016058546A (ja) * 2014-09-09 2016-04-21 株式会社東芝 半導体装置
CN111477547A (zh) * 2020-04-26 2020-07-31 广东省半导体产业技术研究院 一种增强型功率器件及其制作方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000021897A (ja) * 1998-06-29 2000-01-21 Toshiba Corp 電界効果トランジスタおよびその製造方法
JP2013062365A (ja) * 2011-09-13 2013-04-04 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2016058546A (ja) * 2014-09-09 2016-04-21 株式会社東芝 半導体装置
CN111477547A (zh) * 2020-04-26 2020-07-31 广东省半导体产业技术研究院 一种增强型功率器件及其制作方法

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CN121533152A (zh) 2026-02-13
JPWO2025017892A1 (https=) 2025-01-23

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