JPWO2025017892A1 - - Google Patents

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Publication number
JPWO2025017892A1
JPWO2025017892A1 JP2023570418A JP2023570418A JPWO2025017892A1 JP WO2025017892 A1 JPWO2025017892 A1 JP WO2025017892A1 JP 2023570418 A JP2023570418 A JP 2023570418A JP 2023570418 A JP2023570418 A JP 2023570418A JP WO2025017892 A1 JPWO2025017892 A1 JP WO2025017892A1
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JP
Japan
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JP2023570418A
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Japanese (ja)
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JPWO2025017892A5 (https=
JP7513219B1 (ja
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Publication of JPWO2025017892A1 publication Critical patent/JPWO2025017892A1/ja
Publication of JPWO2025017892A5 publication Critical patent/JPWO2025017892A5/ja
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  • Junction Field-Effect Transistors (AREA)
JP2023570418A 2023-07-20 2023-07-20 半導体装置およびその製造方法 Active JP7513219B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/026521 WO2025017892A1 (ja) 2023-07-20 2023-07-20 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP7513219B1 JP7513219B1 (ja) 2024-07-09
JPWO2025017892A1 true JPWO2025017892A1 (https=) 2025-01-23
JPWO2025017892A5 JPWO2025017892A5 (https=) 2025-06-24

Family

ID=91802831

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023570418A Active JP7513219B1 (ja) 2023-07-20 2023-07-20 半導体装置およびその製造方法

Country Status (3)

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JP (1) JP7513219B1 (https=)
CN (1) CN121533152A (https=)
WO (1) WO2025017892A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000021897A (ja) * 1998-06-29 2000-01-21 Toshiba Corp 電界効果トランジスタおよびその製造方法
JP5739774B2 (ja) * 2011-09-13 2015-06-24 トランスフォーム・ジャパン株式会社 化合物半導体装置及びその製造方法
JP2016058546A (ja) * 2014-09-09 2016-04-21 株式会社東芝 半導体装置
CN111477547A (zh) * 2020-04-26 2020-07-31 广东省半导体产业技术研究院 一种增强型功率器件及其制作方法

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Publication number Publication date
WO2025017892A1 (ja) 2025-01-23
CN121533152A (zh) 2026-02-13
JP7513219B1 (ja) 2024-07-09

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