CN121533152A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法

Info

Publication number
CN121533152A
CN121533152A CN202380100335.8A CN202380100335A CN121533152A CN 121533152 A CN121533152 A CN 121533152A CN 202380100335 A CN202380100335 A CN 202380100335A CN 121533152 A CN121533152 A CN 121533152A
Authority
CN
China
Prior art keywords
layer
opening
semiconductor device
channel layer
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380100335.8A
Other languages
English (en)
Chinese (zh)
Inventor
加茂宣卓
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN121533152A publication Critical patent/CN121533152A/zh
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
CN202380100335.8A 2023-07-20 2023-07-20 半导体装置及其制造方法 Pending CN121533152A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/026521 WO2025017892A1 (ja) 2023-07-20 2023-07-20 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
CN121533152A true CN121533152A (zh) 2026-02-13

Family

ID=91802831

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380100335.8A Pending CN121533152A (zh) 2023-07-20 2023-07-20 半导体装置及其制造方法

Country Status (3)

Country Link
JP (1) JP7513219B1 (https=)
CN (1) CN121533152A (https=)
WO (1) WO2025017892A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000021897A (ja) * 1998-06-29 2000-01-21 Toshiba Corp 電界効果トランジスタおよびその製造方法
JP5739774B2 (ja) * 2011-09-13 2015-06-24 トランスフォーム・ジャパン株式会社 化合物半導体装置及びその製造方法
JP2016058546A (ja) * 2014-09-09 2016-04-21 株式会社東芝 半導体装置
CN111477547A (zh) * 2020-04-26 2020-07-31 广东省半导体产业技术研究院 一种增强型功率器件及其制作方法

Also Published As

Publication number Publication date
WO2025017892A1 (ja) 2025-01-23
JPWO2025017892A1 (https=) 2025-01-23
JP7513219B1 (ja) 2024-07-09

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