JP2009224760A - 電界効果トランジスタ - Google Patents
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- 230000005669 field effect Effects 0.000 title claims abstract description 13
- 238000002161 passivation Methods 0.000 claims abstract description 128
- 239000004065 semiconductor Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 150000004767 nitrides Chemical class 0.000 claims abstract description 15
- 239000003989 dielectric material Substances 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 2
- 238000005240 physical vapour deposition Methods 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 3
- 238000012545 processing Methods 0.000 abstract description 5
- 238000010893 electron trap Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 160
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000000137 annealing Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000002028 premature Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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Abstract
【解決手段】電子トラップ及びゲート電流の漏れを減少させる窒化物系FETデバイス10である。該デバイスは、デバイスの加工に起因するトラップを減少させるため比較的厚い不動態化層20と、ゲート電流の漏れを減少させるためゲート端子38の下方の薄い不動態化層16、18とを含む。デバイスは、基板12上に堆積させた半導体デバイス層14を含む。複数の不動態化層が半導体デバイス層14上に堆積され、少なくとも2つの層はエッチストップを提供し得るよう異なる誘電性材料にて出来ている。層の間の境界面をエッチストップとして使用することにより1つ又はより多くの不動態化層18、20を除去し、ゲート端子38と半導体デバイス層14間の距離を正確に制御することができるようにし、この距離はデバイスの性能を向上させ且つゲート電流の漏れを減少させるよう極めて短くすることができる。
【選択図】図3
Description
12 基板
14 半導体デバイス層
16 第一の不動態化層
18 第二の不動態化層
20 第三の不動態化層
24 ソース端子
26 ドレーン端子
28 金属層
30 金属層
32 不動態化層
36 デバイス
38 ゲート端子
40 FETデバイス
42 FETデバイス
46 誘電層
48 誘電層
Claims (22)
- 電界効果トランジスタデバイスにおいて、
基板と、
基板上に堆積された複数の半導体デバイスと、
半導体デバイス層上に堆積された複数の誘電性不動態化層と、
半導体デバイス層上に堆積されたソース端子と、
半導体デバイス層上に堆積されたドレーン端子と、
少なくとも1つの不動態化層上に堆積されたゲート端子と、を備え、少なくとも2つの不動態化層は、異なる誘電性材料にて出来ており、ソース端子とゲート端子との間、及びドレーン端子とゲート端子との間の不動態化層の厚さは、不動態化層はゲート端子の側部に設けられるよう、ゲート端子と半導体デバイス層との間の1つ又はより多くの不動態化層の厚さよりも厚い、電界効果トランジスタデバイス。 - 請求項1に記載のデバイスにおいて、
複数の不動態化層は、3つの不動態化層であり、
デバイス層に最も近い2つの不動態化層の組合せ体の厚さは、2つの不動態化層上の頂部不動態化層よりも薄い、デバイス。 - 請求項2に記載のデバイスにおいて、
ゲート端子は、デバイス層に最も近い不動態化層上にのみ堆積される、デバイス。 - 請求項2に記載のデバイスにおいて、
ゲート端子は、デバイス層に最も近い2つの不動態化層の双方の上に堆積される、デバイス。 - 請求項1に記載のデバイスにおいて、
ゲート端子とデバイス層との間の1つ又はより多くの不動態化層の厚さは、5−150Åの範囲にある、デバイス。 - 請求項1に記載のデバイスにおいて、
少なくとも1つの不動態化層は、窒化ケイ素であり、
少なくとも1つの不動態化層は、窒化アルミニウムである、デバイス。 - 請求項1に記載のデバイスにおいて、
窒化物系デバイスである、デバイス。 - 請求項7に記載のデバイスにおいて、
基板は、サファイア、SiC、Si、AIN及びGaN基板から成る群から選ばれる、デバイス。 - 請求項1に記載のデバイスにおいて、
HEMTデバイス、MESFETデバイス、MOSFETデバイス、MISFETデバイス及びMODFETデバイスから成る群から選ばれる、デバイス。 - 請求項1に記載のデバイスにおいて、
半導体デバイス層及び不動態化層は、分子線エピタキシ法、化学気相成長法、物理気相成長法、原子層成長法から成る群から選ばれた過程により基板上に堆積される、デバイス。 - 請求項1に記載のデバイスにおいて、
半導体デバイス層及び不動態化層は、同一の過程により堆積される、デバイス。 - 請求項1に記載のデバイスにおいて、
不動態化層は、半導体デバイス層が空気に曝される前に、堆積される、デバイス。 - 請求項1に記載のデバイスにおいて、
半導体デバイス層及び不動態化層は、異なる過程により堆積される、デバイス。 - 請求項1に記載のデバイスにおいて、
ソース端子及びドレーン端子は、半導体デバイス層上に直接、堆積される、デバイス。 - 窒化物系電界効果トランジスタデバイスにおいて、
基板と、
基板上に堆積された複数の半導体デバイスと、
半導体デバイス層上に堆積された3つの誘電性不動態化層であって、不動態化層の中間のものは、その他の2つの不動態化層と異なる材料にて出来ている、前記3つの誘電性不動態化層と、
半導体デバイス層上に堆積されたソース端子と、
半導体デバイス層上に堆積されたドレーン端子と、
半導体デバイス層に最も近い不動態化層の1つにのみ堆積されたゲート端子であって、これにより中間及び頂部不動態化層が該ゲート端子の側部に設けられるようにする前記ゲート端子と、を備える、窒化物系電界効果トランジスタデバイス。 - 請求項15に記載のデバイスにおいて、
ゲート端子とデバイス層との間の不動態化層の厚さは、5−150Åの範囲にある、デバイス。 - 請求項15に記載のデバイスにおいて、
少なくとも1つの不動態化層は、窒化ケイ素であり、
少なくとも1つの不動態化層は、窒化アルミニウムである、デバイス。 - 請求項15に記載のデバイスにおいて、
ソース端子及びドレーン端子は、半導体デバイス層上に直接、堆積される、デバイス。 - 窒化物系電界効果トランジスタデバイスにおいて、
基板と、
基板上に堆積された複数の半導体デバイスと、
半導体デバイス層上に堆積された3つの誘電性不動態化層であって、不動態化層の1つの中間のものは、その他の2つの不動態化層と異なる材料にて出来ている、前記3つの誘電性不動態化層と、
半導体デバイス層上に堆積されたソース端子と、
半導体デバイス層上に堆積されたドレーン端子と、
半導体デバイス層に最も近い不動態化層の2つに堆積されたゲート端子であって、頂部不動態化層が該ゲート端子の側部に設けられるようにする前記ゲート端子と、を備える、窒化物系電界効果トランジスタデバイス。 - 請求項19に記載のデバイスにおいて、
ゲート端子とデバイス層との間の2つの不動態化層の厚さは、5−150Åの範囲にある、デバイス。 - 請求項19に記載のデバイスにおいて、
少なくとも1つの不動態化層は、窒化ケイ素であり、
少なくとも1つの不動態化層は、窒化アルミニウムである、デバイス。 - 請求項19に記載のデバイスにおいて、
ソース端子及びドレーン端子は、半導体デバイス層上に直接、堆積される、デバイス。
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US11/952,527 | 2007-12-07 | ||
US11/952,527 US8431962B2 (en) | 2007-12-07 | 2007-12-07 | Composite passivation process for nitride FET |
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Cited By (2)
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JP2013012735A (ja) * | 2011-06-20 | 2013-01-17 | Imec | Hemt装置を製造するcmosコンパチブルな方法とそのhemt装置 |
JPWO2012026396A1 (ja) * | 2010-08-25 | 2013-10-28 | 日本碍子株式会社 | 半導体素子用エピタキシャル基板、半導体素子、半導体素子用エピタキシャル基板の作製方法、および半導体素子の作製方法 |
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US8390000B2 (en) * | 2009-08-28 | 2013-03-05 | Transphorm Inc. | Semiconductor devices with field plates |
US8946771B2 (en) * | 2011-11-09 | 2015-02-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gallium nitride semiconductor devices and method making thereof |
US20130146943A1 (en) * | 2011-12-12 | 2013-06-13 | John P. EDWARDS | In situ grown gate dielectric and field plate dielectric |
KR20150092172A (ko) | 2012-11-16 | 2015-08-12 | 메사추세츠 인스티튜트 오브 테크놀로지 | 반도체 구조물, 및 리세스 형성 에칭 수법 |
US9093285B2 (en) * | 2013-03-22 | 2015-07-28 | United Microelectronics Corp. | Semiconductor structure and process thereof |
CN107230700A (zh) * | 2016-03-25 | 2017-10-03 | 北京大学 | 氮化镓晶体管和氮化镓晶体管的制造方法 |
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