JP7503053B2 - インゴットの品質を向上するためのシリコン融液中のドーパント濃度制御 - Google Patents

インゴットの品質を向上するためのシリコン融液中のドーパント濃度制御 Download PDF

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JP7503053B2
JP7503053B2 JP2021519714A JP2021519714A JP7503053B2 JP 7503053 B2 JP7503053 B2 JP 7503053B2 JP 2021519714 A JP2021519714 A JP 2021519714A JP 2021519714 A JP2021519714 A JP 2021519714A JP 7503053 B2 JP7503053 B2 JP 7503053B2
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single crystal
silicon ingot
crystal silicon
melt
ingot
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JP2022504609A5 (enExample
JP2022504609A (ja
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マリア・ポッリーニ
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GlobalWafers Co Ltd
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GlobalWafers Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
JP2021519714A 2018-10-12 2019-09-09 インゴットの品質を向上するためのシリコン融液中のドーパント濃度制御 Active JP7503053B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862744672P 2018-10-12 2018-10-12
US62/744,672 2018-10-12
PCT/US2019/050140 WO2020076448A1 (en) 2018-10-12 2019-09-09 Dopant concentration control in silicon melt to enhance the ingot quality

Publications (3)

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JP2022504609A JP2022504609A (ja) 2022-01-13
JP2022504609A5 JP2022504609A5 (enExample) 2022-09-09
JP7503053B2 true JP7503053B2 (ja) 2024-06-19

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US (1) US11085128B2 (enExample)
EP (1) EP3864197B1 (enExample)
JP (1) JP7503053B2 (enExample)
KR (1) KR102514915B1 (enExample)
CN (1) CN113272479B (enExample)
SG (1) SG11202103547UA (enExample)
TW (2) TWI796517B (enExample)
WO (1) WO2020076448A1 (enExample)

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KR102748192B1 (ko) * 2023-02-07 2024-12-31 에스케이실트론 주식회사 실리콘 단결정 잉곳 및 그 성장 방법
FI4495297T3 (fi) 2023-07-18 2026-03-23 Siltronic Ag Menetelmä piistä seostetun yksikiteisen kiteen kasvattamiseksi
US20250293073A1 (en) 2024-03-18 2025-09-18 Globalwafers Co., Ltd. Reclaimable donor substrates for use in preparing multiple silicon-on-insulator structures

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JP2003532613A (ja) 2000-05-11 2003-11-05 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド チョクラルスキー法により成長させたシリコン結晶において低抵抗率を得る多段階ヒ素ドーピング法
JP2008266093A (ja) 2007-04-24 2008-11-06 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶の製造方法および装置並びにシリコン単結晶インゴット

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WO2003021011A1 (en) * 2001-08-29 2003-03-13 Memc Electronic Materials, Inc. Process for eliminating neck dislocations during czochralski crystal growth
US7132091B2 (en) * 2001-09-28 2006-11-07 Memc Electronic Materials, Inc. Single crystal silicon ingot having a high arsenic concentration
KR100764394B1 (ko) * 2002-11-12 2007-10-05 엠이엠씨 일렉트로닉 머티리얼즈, 인크. 도가니 회전을 이용하여 온도 구배를 제어하는 단결정 실리콘의 제조 방법
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JP2022504609A (ja) 2022-01-13
KR102514915B1 (ko) 2023-03-27
KR20210072771A (ko) 2021-06-17
WO2020076448A1 (en) 2020-04-16
EP3864197A1 (en) 2021-08-18
TW202328513A (zh) 2023-07-16
TW202014566A (zh) 2020-04-16
TWI796517B (zh) 2023-03-21
US20200115818A1 (en) 2020-04-16
CN113272479B (zh) 2024-11-08
TWI831613B (zh) 2024-02-01
US11085128B2 (en) 2021-08-10
EP3864197B1 (en) 2022-08-03
SG11202103547UA (en) 2021-05-28
CN113272479A (zh) 2021-08-17

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