TWI796517B - 單晶矽鑄碇及其製造方法 - Google Patents
單晶矽鑄碇及其製造方法 Download PDFInfo
- Publication number
- TWI796517B TWI796517B TW108133242A TW108133242A TWI796517B TW I796517 B TWI796517 B TW I796517B TW 108133242 A TW108133242 A TW 108133242A TW 108133242 A TW108133242 A TW 108133242A TW I796517 B TWI796517 B TW I796517B
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- silicon ingot
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- silicon
- ingot
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 78
- 238000004519 manufacturing process Methods 0.000 title description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 83
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 83
- 239000010703 silicon Substances 0.000 claims abstract description 83
- 238000000034 method Methods 0.000 claims abstract description 59
- 239000002019 doping agent Substances 0.000 claims abstract description 55
- 239000013078 crystal Substances 0.000 claims description 60
- 230000007547 defect Effects 0.000 claims description 12
- 229910052785 arsenic Inorganic materials 0.000 claims description 11
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims 2
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 2
- 230000008030 elimination Effects 0.000 abstract description 6
- 238000003379 elimination reaction Methods 0.000 abstract description 6
- 210000003739 neck Anatomy 0.000 description 63
- 239000000155 melt Substances 0.000 description 41
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 27
- 229910052760 oxygen Inorganic materials 0.000 description 27
- 239000001301 oxygen Substances 0.000 description 27
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 20
- 229920005591 polysilicon Polymers 0.000 description 19
- 238000010348 incorporation Methods 0.000 description 9
- 238000001704 evaporation Methods 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 8
- 230000004907 flux Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000007787 solid Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012768 molten material Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004781 supercooling Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
- H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862744672P | 2018-10-12 | 2018-10-12 | |
| US62/744,672 | 2018-10-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202014566A TW202014566A (zh) | 2020-04-16 |
| TWI796517B true TWI796517B (zh) | 2023-03-21 |
Family
ID=68051926
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108133242A TWI796517B (zh) | 2018-10-12 | 2019-09-16 | 單晶矽鑄碇及其製造方法 |
| TW112105422A TWI831613B (zh) | 2018-10-12 | 2019-09-16 | 製造單晶矽鑄碇之方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW112105422A TWI831613B (zh) | 2018-10-12 | 2019-09-16 | 製造單晶矽鑄碇之方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11085128B2 (enExample) |
| EP (1) | EP3864197B1 (enExample) |
| JP (1) | JP7503053B2 (enExample) |
| KR (1) | KR102514915B1 (enExample) |
| CN (1) | CN113272479B (enExample) |
| SG (1) | SG11202103547UA (enExample) |
| TW (2) | TWI796517B (enExample) |
| WO (1) | WO2020076448A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102748192B1 (ko) * | 2023-02-07 | 2024-12-31 | 에스케이실트론 주식회사 | 실리콘 단결정 잉곳 및 그 성장 방법 |
| FI4495297T3 (fi) | 2023-07-18 | 2026-03-23 | Siltronic Ag | Menetelmä piistä seostetun yksikiteisen kiteen kasvattamiseksi |
| US20250293073A1 (en) | 2024-03-18 | 2025-09-18 | Globalwafers Co., Ltd. | Reclaimable donor substrates for use in preparing multiple silicon-on-insulator structures |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100089309A1 (en) * | 2007-05-23 | 2010-04-15 | Shin-Etsu Handotai Co., Ltd. | Method for pulling silicon single crystal |
| US20120301386A1 (en) * | 2011-04-14 | 2012-11-29 | GT Advanced CZ, LLC | Silicon ingot having uniform multiple dopants and method and apparatus for producing same |
| CN105992840A (zh) * | 2013-11-22 | 2016-10-05 | 信越半导体株式会社 | 单晶硅的制造方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| DE3049376A1 (de) | 1980-12-29 | 1982-07-29 | Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen | Verfahren zur herstellung vertikaler pn-uebergaenge beim ziehen von siliciumscheiben aus einer siliciumschmelze |
| US6312517B1 (en) * | 2000-05-11 | 2001-11-06 | Memc Electronic Materials, Inc. | Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method |
| WO2003021011A1 (en) * | 2001-08-29 | 2003-03-13 | Memc Electronic Materials, Inc. | Process for eliminating neck dislocations during czochralski crystal growth |
| US7132091B2 (en) * | 2001-09-28 | 2006-11-07 | Memc Electronic Materials, Inc. | Single crystal silicon ingot having a high arsenic concentration |
| KR100764394B1 (ko) * | 2002-11-12 | 2007-10-05 | 엠이엠씨 일렉트로닉 머티리얼즈, 인크. | 도가니 회전을 이용하여 온도 구배를 제어하는 단결정 실리콘의 제조 방법 |
| US7635414B2 (en) | 2003-11-03 | 2009-12-22 | Solaicx, Inc. | System for continuous growing of monocrystalline silicon |
| JP2008088045A (ja) * | 2006-09-05 | 2008-04-17 | Sumco Corp | シリコン単結晶の製造方法およびシリコンウェーハの製造方法 |
| JP5176101B2 (ja) * | 2007-04-24 | 2013-04-03 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | シリコン単結晶の製造方法および装置並びにシリコン単結晶インゴット |
| FR2929960B1 (fr) | 2008-04-11 | 2011-05-13 | Apollon Solar | Procede de fabrication de silicium cristallin de qualite photovoltaique par ajout d'impuretes dopantes |
| US9074298B2 (en) * | 2008-08-18 | 2015-07-07 | Sumco Techxiv Corporation | Processes for production of silicon ingot, silicon wafer and epitaxial wafer, and silicon ingot |
| US8535439B2 (en) * | 2009-01-14 | 2013-09-17 | Sumco Techxiv Corporation | Manufacturing method for silicon single crystal |
| JP2010202414A (ja) * | 2009-02-27 | 2010-09-16 | Sumco Corp | シリコン単結晶の育成方法及びシリコンウェーハの製造方法 |
| JP5399212B2 (ja) * | 2009-11-16 | 2014-01-29 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | シリコン単結晶の製造方法 |
| CN103249875B (zh) | 2010-09-03 | 2016-10-12 | Gtatip控股有限责任公司 | 镓、铟、或铝掺杂单晶硅 |
| US8512470B2 (en) * | 2011-04-08 | 2013-08-20 | China Crystal Technologies Co. Ltd | System and methods for growing high-resistance single crystals |
| CN102260900B (zh) | 2011-07-14 | 2013-11-27 | 西安华晶电子技术股份有限公司 | 提高单晶硅纵向电阻率一致性的装置及其处理工艺 |
| KR101330408B1 (ko) * | 2011-08-12 | 2013-11-15 | 주식회사 엘지실트론 | 잉곳 성장 장치 및 잉곳 제조 방법 |
| JP5470349B2 (ja) | 2011-10-17 | 2014-04-16 | ジルトロニック アクチエンゲゼルシャフト | ｐ型シリコン単結晶およびその製造方法 |
| CN102560646B (zh) * | 2012-03-20 | 2015-05-20 | 浙江大学 | 一种掺杂电阻率均匀的n型铸造硅单晶及其制备方法 |
| JP5831436B2 (ja) * | 2012-12-11 | 2015-12-09 | 信越半導体株式会社 | シリコン単結晶の製造方法 |
| US10060045B2 (en) | 2012-12-31 | 2018-08-28 | Corner Star Limited | Fabrication of indium-doped silicon by the czochralski method |
| JP6222013B2 (ja) | 2014-08-29 | 2017-11-01 | 信越半導体株式会社 | 抵抗率制御方法 |
| JP5892232B1 (ja) * | 2014-12-24 | 2016-03-23 | 株式会社Sumco | 単結晶の製造方法およびシリコンウェーハの製造方法 |
| KR101680215B1 (ko) * | 2015-01-07 | 2016-11-28 | 주식회사 엘지실트론 | 실리콘 단결정 잉곳 제조 방법 및 그 제조방법에 의해 제조된 실리콘 단결정 잉곳 |
| US20180291524A1 (en) * | 2015-05-01 | 2018-10-11 | Corner Star Limited | Methods for producing single crystal ingots doped with volatile dopants |
| WO2016179022A1 (en) * | 2015-05-01 | 2016-11-10 | Sunedison, Inc. | Methods for producing single crystal ingots doped with volatile dopants |
| JP6987057B2 (ja) * | 2015-12-04 | 2021-12-22 | グローバルウェーハズ カンパニー リミテッドGlobalWafers Co., Ltd. | 低酸素含有シリコンを生産するシステム及び方法 |
| DE102015226399A1 (de) * | 2015-12-22 | 2017-06-22 | Siltronic Ag | Siliciumscheibe mit homogener radialer Sauerstoffvariation |
| CN105887194A (zh) | 2016-05-30 | 2016-08-24 | 上海超硅半导体有限公司 | 一种n型单晶硅的生长方法 |
-
2019
- 2019-09-09 WO PCT/US2019/050140 patent/WO2020076448A1/en not_active Ceased
- 2019-09-09 SG SG11202103547UA patent/SG11202103547UA/en unknown
- 2019-09-09 KR KR1020217010356A patent/KR102514915B1/ko active Active
- 2019-09-09 EP EP19773619.2A patent/EP3864197B1/en active Active
- 2019-09-09 CN CN201980066785.3A patent/CN113272479B/zh active Active
- 2019-09-09 JP JP2021519714A patent/JP7503053B2/ja active Active
- 2019-09-10 US US16/565,695 patent/US11085128B2/en active Active
- 2019-09-16 TW TW108133242A patent/TWI796517B/zh active
- 2019-09-16 TW TW112105422A patent/TWI831613B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100089309A1 (en) * | 2007-05-23 | 2010-04-15 | Shin-Etsu Handotai Co., Ltd. | Method for pulling silicon single crystal |
| US20120301386A1 (en) * | 2011-04-14 | 2012-11-29 | GT Advanced CZ, LLC | Silicon ingot having uniform multiple dopants and method and apparatus for producing same |
| CN105992840A (zh) * | 2013-11-22 | 2016-10-05 | 信越半导体株式会社 | 单晶硅的制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2022504609A (ja) | 2022-01-13 |
| KR102514915B1 (ko) | 2023-03-27 |
| KR20210072771A (ko) | 2021-06-17 |
| WO2020076448A1 (en) | 2020-04-16 |
| EP3864197A1 (en) | 2021-08-18 |
| TW202328513A (zh) | 2023-07-16 |
| TW202014566A (zh) | 2020-04-16 |
| JP7503053B2 (ja) | 2024-06-19 |
| US20200115818A1 (en) | 2020-04-16 |
| CN113272479B (zh) | 2024-11-08 |
| TWI831613B (zh) | 2024-02-01 |
| US11085128B2 (en) | 2021-08-10 |
| EP3864197B1 (en) | 2022-08-03 |
| SG11202103547UA (en) | 2021-05-28 |
| CN113272479A (zh) | 2021-08-17 |
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