1282379 A7 _____ B7 五、發明説明（2 ) (請先閱讀背面之注意事項再填寫本頁) 一般這種結晶缺陷若存在於磊晶層表面時，將使洩漏特性 劣化等，已知對於裝置發生不良影響。於是，本發明人等 ，就形成於這些磊晶之缺陷努力進行調查。其結果，在發 生這種磊晶層缺陷之位置，於其磊晶成長用之基板表面， 確認_I微氺囀〜位^環^草程度之密度存^。m之 2 0 0 m m以下之基板，這種基板表® It 發生於降低拉起速度之低速育成結晶之丄直領域，^次蝕 刻等之選擇蝕刻（例如使用於F P D評價之無攪拌二次蝕 刻）或銅修飾法等所觀察者，所觀察到之缺陷尺寸霡非常 大，其大小最低也有1 0 //m以上，也被叫链||良群/(-一 cluster )。 經濟部智慧財產局員工消費合作社印製 但是，使3 0 0 m m以上之磊晶晶圓發生轉位環之磊 晶成長用之基板，並非從低速育成結晶所製作之§板，顯 然地也道於高速育成在V多領域所育成者，與上述同樣 ,雖然於二次蝕刻等選擇蝕刻（例如使用於F P D評價所 使用之無攪拌二次蝕刻）或銅修飾法觀察到缺陷，但是缺 陷之尺寸係單面3 0 // m左右之蝕刻完（etchoff )量，進 行無攪拌二次蝕刻時成爲5 /i m左右之液滴形狀之鈾刻坑 (etch pit )所觀察到者，最大也不會超過1 〇 // m，曉得 了與存在於2 0 0 m m以下之基板之I多領域相較爲小。 這種缺陷係到直徑2 0 0 m m之基板，也很少被觀察到。 但是，因其密度爲極低，即使施加磊晶成長也幾乎不顯眼 ，完全沒有問題。但是，若直徑變成3 0 0 mm以上時， 顯然地這種缺陷將以更高密度地發生。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐) -5- 1282379 A7 B7 五、發明説明（3 ) 於此，就C Z法（Czochrallskimethod)結晶之拉起條 件與成長（Grown ιη )缺陷領域之關係說明如下。 (請先閲讀背面之注意事項再填寫本頁) 首先，拉起C Z單結晶時，在取入於結晶中之點缺陷 ，有原子空位（Vacancy )與格子間矽（Interstitial- Si ) ，.此兩點缺陷之濃度，係已知由結晶拉起速度V (成長速 度）與結晶中之固液界面附近之溫度坡度G之關係（V / G )所決定。並且，於矽單結晶，取入多原子空位之領域 係被稱爲V多領域，因矽原子之不足存在有空隙（V〇1d ) 型之成長缺陷。另者，取入多格子間矽之領域係被稱爲I 多領域，因存在有多餘矽原子所發生之轉位所引起，存在 有多轉位群等之缺陷。 經濟部智慧財產局員工消費合作社印製 又，在V多領域與I多領域之間，已知存在有原子之 不足或多餘爲少之N領域（Neutral領域），並且，在此N 領域確認有氧化感應疊層缺陷（Oxidation- induced StackingFault ··以下略稱爲〇S F )呈環狀地發生之〇S F 領域（也叫做0 S F環狀領域，環狀〇S F領域）之存在 。第2圖係模式地表示將縱軸視爲結晶拉起速度，將橫軸 視爲從結晶中心之距離時之成長缺陷領域之分布圖。此缺 陷領域之分布形狀，係調整結晶之拉起條件或結晶成長裝 置之爐內構造（熱區：Hot Zone :HZ)等藉控制V/G 即可將其改變。 從第2圖就可淸楚，一般，藉提高結晶之拉起速度， 〇S F領域就向結晶之外周側移動，不久從結晶外周部消 滅，變成全面V多領域之結晶。相反地，降低拉起速度時 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -6- 1282379 A7 ___B7 _ 五、發明説明（4 ) 〇S F領域就向結晶之中心側移動，不久在結晶之中央部 消滅，經過N領域成爲全面I多領域之結晶。 按，摻雜氮時，報告有OSF領域或N領域之寬度或 領域之邊界位置會發生變化（1 9 9 9年春季第4 6之應 用物理學關係聯合講演會預稿集Ν 〇 · 1，P · 4 7 1， 2 9 a Z B - 9飯田他）。因此，於氮摻雜結晶，欲控制 〇S F領域時，參考此氮摻雜結晶育成時之V / G缺陷領 域分布之關係即可〉」按，姐复申隨人_1篮腹申請之日本專 一Z〆-一一’ . .S------------—— 〜利特題JLI—1— 一 2 9 4 5 2 3號所JS載—τ—廪徑爲 ——_一〜〜一一 -- —— 2 0 0 mm以工之X、._?結晶之X多領域....菪是摻雜氮.之結 晶J寺，如上述3 0 0 m m以上之結晶所觀察到確認存在有 _____— . 發生磊晶缺陷之微小轉位環。然而，如於無摻雜氮之C Z 結晶之V多領域之微小轉位環所以會發生許多，係由本發 明人'等滿..初次得到之見解。 【發明之揭示】 於此，本發明係鑑於這樣問題所完成者，其主要目的 係提供一種，在c Z法單結晶育成時，無摻雜氮時，到直 徑2 0 0 m m不會發生微小轉位環，闡明在3 0 0 m m以 上才發生之原因，建立了可抑制結晶缺陷發生之育成方法 ，對此所得到之矽單結晶晶圓進行磊晶成長時，可抑制發 生於嘉晶層之結晶缺陷之製造砂單結晶晶圓之方法及從其 所製造之砂單結晶晶圓及嘉晶晶圓。 爲了解決上述問題，關於本發明之矽單結晶晶圓之製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） - (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 1282379 A7 ________B7_ 五、發明説明（5 ) (請先閱讀背面之注意事項再填寫本頁) 造方法，其特徵爲：使用Czochrallski法育成直徑爲3 0 0 m m以上之矽單結晶時，至少結晶之中心位置爲變成v多 領域，且將1 0 0 0〜9 0 0 °C溫度帶之冷卻速度能夠變 成1 · 2 5 °C /分鐘所拉起之矽單結晶棒製作矽單結晶晶 圓。 成爲這樣，幾乎可抑制以往之氮無摻雜之育成方法， 若直徑變成3 0 Omm以上時呈高密度所發生之轉位環之 發生，晶圓之至少中心位置爲在V多領域，可製造無轉位 環之直徑爲3 0 0 m m以上之矽單結晶晶圓。 此時，就可將此矽單結晶晶圓成爲磊晶晶圓成長用晶 圓。 像這樣，本發明之矽單結晶晶圓，係作爲磊晶成長用 成爲極有效之基板。因此，在該晶圓形成磊晶層時，就可 作爲磊晶缺陷之裝置用以容易而低成本製造不會使洩漏特 性寺劣化之局品質嘉晶晶圓。 經濟部智慧財產局員工消費合作社印製 並且，關於本發明之矽單結晶晶圓，其特徵爲：以 Czochrallski法育成，一種具有V多領域之直徑3 0 0mm 以上之矽單結晶晶圓，而轉位環不存在於晶圓全面。 像這樣，本發明之晶圓，係使用C Z法育成之直徑即 使爲3 0 0 m m以上，也會變成轉位環不存在於晶圓全面 之高品質之矽單結晶晶圓。 此時，可將此矽單結晶晶圓成爲磊晶成長用晶圓。 像這樣，具有V多領域，轉位環爲不存在於晶圓全面 之砂單結晶晶圓，係作爲嘉晶成長用成爲極有效之基板。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -8- [282379 A7 B7 五、發明説明（8 (請先閲讀背面之注意事項再填寫本頁) 時，曉得了可減低微小轉位環。又，此冷卻速度之下限只 要是至少結晶之中心部爲變成V多領域之條件時並非特別 加以限定，但是實用上爲〇 · 4 t： /分鐘左右。 接著，於V多領域幾乎不會發生微小轉位環之以往無 摻雜氮到直徑2 0 0 m m之結晶之一般拉起條件進行調查 時，曉得了 1 0 0 0〜9 0 之溫度帶之通過時間，即 使於最快情形也需要花8 0分鐘左右之時間。因此，於v 多領域作爲不發生微小轉位環之條件，確認了將1 〇 〇 〇 〜9 0 0 °C之溫度帶之冷卻速度成爲約1 · 25°C/分鐘 (100 °C / 80分鐘）以下即可。 於是，育成直徑3 0 0 m m以上之結晶時適用此拉起 條件嘗試了單結晶育成。在單結晶拉起裝置之Η Z上部空 間，設置適當大小之隔熱材，且在結晶育成後不立即捲起 ，設定1 0 0 0〜9 0 0°C之溫度帶之冷卻速度成爲 1 · 2 5 °C /分鐘以下之條件，以其條件育成結晶時，曉 得了完全未發生微小轉位環。 茲就本發明參照圖式詳細說明如下。 經濟部智慧財產局員工消費合作社印製 首先，將本發明所使用以C Z法之單結晶拉起裝置之 槪略構成例從第1圖說明如下。 如第1圖說明，此單結晶拉起裝置3 0 ,係由具有： 拉起室3 1 ,與拉起室3 1中裝設之坩堝3 2，與配置於 坩堝3 2周圍之加熱器3 4 ,與使坩堝3 2迴轉之坩堝保 持軸3 3及其迴轉機構（未圖示），與保持矽種結晶5之 種結晶夾具6，與拉起種結晶夾具6之鋼索7 ,與迴轉或 表紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -11 · 1282379 A7 ___B7_ 五、發明説明（9 ) (請先閱讀背面之注意事項再填寫本頁) 捲繞鋼索7之捲繞機構（未圖示）所構成。坩堝3 2係收 容其側內側矽熔液（熔水）2之側設有石英坩堝，在其外 側設有石墨坩堝。又，在加熱器3 4外側周圍配置有隔熱 材3 5。 又，爲了欲設定關於本發明之製造方法之製造條件， 在結晶之固液界面4外周設環狀之固液界面隔熱材8，在 其上配置上部圍繞隔熱材9。此固液界面隔熱材8，係在 其下端與矽熔液2之熔水面3之間裝設設置小間隙1 0。 依條件有時爲不使用上部圍繞隔熱材9。並且，也可裝設 噴吹冷卻氣，遮住輻射熱以冷卻單結晶之未圖示筒狀冷卻 裝置。另外，最近於拉起室3 1之水平方向外側，設置未 圖示之磁鐵，因對於矽熔液2施加水平方向或垂直方向等 磁場，抑制熔液之對流，力求單結晶之安定成長使用所謂 M C Z法也多。 茲舉出本發明之實施例與比較例將本發明具體地說明 ，但是本發明並非限定於這些者。 經濟部智慧財產局員工消費合作社印製 (實施例1 ) 於第1圖所示之拉起裝置，在直徑3 2英寸（8 0 0 m m )之石英坩堝裝塡原料多結晶矽，將製造直徑3 0 0 m m，方位〈1 〇 〇〉，導電型p型之矽單結晶晶圓所用 之矽單結晶棒1拉起複數支（無摻雜氮）。 在進行實際拉起之前，改變設置於ΗZ上部空間之上 部圍繞隔熱材9位置或大小反復進行拉起實驗，將Η Ζ設 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） -12- 1282379 A7 ______B7_ 五、發明説明（H) 以上之L P D。其結果，任一晶圓在晶圓全面（直徑 3〇〇mm)觀察到1 〇〇個以上之LPD。 (請先閱讀背面之注意事項再填寫本頁) 按，本發明係並非限定於上述實施形態。上述實施形 態係例示者，具有與本發明之申請專利範圍所記載之技術 思想實質上同一之構成，發揮同樣之作用效果者，則任何 者也包含於本發明之技術範圍。 例如，於上述實施形態，使用Czochrallski法（C Z法 )就育成矽單結晶時舉例說明，但是，本發明並非限定於 這些，當然也可適用於對於矽熔液，施加水平磁場，縱磁 場，尖點（cusp )磁場等之所謂M C Z法。 又，本發明係矽單結晶（晶圓）之直徑爲3 0 0 m m 以上，冷卻速度爲既定値以下時，不管單結晶之導電型， 電阻率，氧濃度等都可適用，並且，也可同樣適用於例如 爲了促進氧澱積，摻雜碳之矽單結晶。 圖式之簡單說明 第1圖係依據本發明所使用之C Z法之單結晶拉起裝 經濟部智慧財產局員工消費合作社印製 置之槪略說明圖。 第2圖係於矽單結晶之結晶之徑向位置做爲橫軸，將 結晶拉起速度做爲縱軸時之成長缺陷領域之分布圖（無摻 雜氮結晶）。 第3圖係表示從結晶肩部之長度與轉位環密度關係之 結果圖。 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） -14- 1282379 A7 B7五、發明説明（12) 主要元件對照表 1 矽單結晶棒 2 矽熔液 3 熔水面 4 固液界面 5 種結晶 6 種結晶 7 鋼索 8 固液界面隔熱材 9 上部圍繞隔熱材 3 0 單結晶拉起裝置 3 1 拉起室 3 2 坩堝 33 坩堝保持軸 3 4 加熱器 3 5 隔熱材 (請先閱讀背面之注意事項再填寫本頁) 衣. 訂 ΦΙ. 經濟部智慧財產局員工消費合作社印製 隙區 間熱 0 Z 1 Η 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -15-1282379 A7 _____ B7 V. INSTRUCTIONS (2) (Please read the precautions on the back and fill out this page.) Generally, if such crystal defects are present on the surface of the epitaxial layer, the leakage characteristics will be deteriorated. Bad effects. Then, the inventors of the present invention tried to investigate the defects formed in these epitaxes. As a result, at the position where the epitaxial layer defect occurs, the density of the _I micro 氺啭 位 位 环 环 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Substrate of 200 mm or less of m, the substrate table ® It occurs in the vertical field of low-speed crystallization to reduce the pulling speed, selective etching such as etching, etc. (for example, the non-stirred secondary etching used for FPD evaluation) ) or the copper modification method, etc., the size of the defect observed is very large, and the minimum size is also more than 10 // m, which is also called chain||good group/(-a cluster). Printed by the Intellectual Property Office of the Ministry of Economic Affairs, the Consumers' Cooperatives, but the substrate for epitaxial growth of the indexing ring of 300 mm or more is not a plate made from low-speed crystallization, apparently In the high-speed breeding in the V-multi-field, as in the above, although the defect is observed by selective etching such as secondary etching (for example, the ablation-free secondary etching used for FPD evaluation) or the copper modification method, the size of the defect is observed. It is observed that the amount of etching (etchoff) on a single side of about 30 // m is observed in the etch pit of a droplet shape of about 5 /im without agitation secondary etching, and the maximum is not More than 1 〇 / / m, it is known that the I field of the substrate existing below 200 mm is relatively small. This defect is attached to a substrate with a diameter of 200 mm and is rarely observed. However, since the density is extremely low, even if the epitaxial growth is applied, it is almost inconspicuous, and there is no problem at all. However, if the diameter becomes more than 300 mm, it is apparent that such defects will occur at a higher density. This paper scale applies to China National Standard (CNS) A4 specification (210X297 mm) -5- 1282379 A7 B7 V. Inventive Note (3) Here, the CZ method (Czochrallskimethod) crystal pull-up condition and growth (Grown ιη) The relationship between the defect areas is explained below. (Please read the precautions on the back and fill out this page.) First, when pulling up the CZ single crystal, there is a point defect in the crystal, and there is an atomic vacancy (Interstitial-Si). The concentration of the two-point defect is determined by the relationship (V / G ) between the crystal pulling speed V (growth speed) and the temperature gradient G near the solid-liquid interface in the crystal. Further, in the case of single crystals, the field in which polyatomic vacancies are taken is called V multi-domain, and there is a gap defect (V〇1d) type growth defect due to the shortage of germanium atoms. In addition, the field in which multiple grids are taken is called I multi-domain, which is caused by the existence of transposition of excess helium atoms, and there are defects such as multi-transposition groups. The Ministry of Economic Affairs, the Intellectual Property Office, and the Employees' Cooperatives Co., Ltd. have printed, and there are known N areas (Neutral areas) where there are insufficient or redundant atoms in the V-domain and I-domains, and it is confirmed in this N field. Oxidation-induced stacking defects (Oxidation-induced StackingFault hereinafter referred to as 〇SF) exist in a ring-shaped SF field (also called a 0 SF ring field, a ring 〇 SF field). Fig. 2 is a view schematically showing a distribution of the growth defect area when the vertical axis is regarded as the crystal pulling speed and the horizontal axis is regarded as the distance from the crystal center. The shape of the defect is changed by adjusting the crystallization condition or the furnace structure (hot zone: Hot Zone: HZ) of the crystal growth apparatus by controlling V/G. It can be seen from Fig. 2. Generally, by increasing the pulling speed of crystallization, the 〇S F field moves toward the outer side of the crystal, and soon disappears from the outer periphery of the crystal, and becomes a crystal of a comprehensive V-domain. Conversely, when the pulling speed is lowered, the paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -6- 1282379 A7 ___B7 _ V. Invention description (4) The SF field moves toward the center of the crystal. Soon after the elimination of the central part of the crystallization, the N field became the crystallization of a comprehensive I field. According to the test, when the nitrogen is doped, the width of the OSF field or the N field or the boundary position of the field will be changed. (In the spring of 1959, the 14th lecture on the application of physics will be held in the first lecture. 〇·1 P · 4 7 1, 2 9 a ZB - 9 Iida he). Therefore, in the case of nitrogen-doped crystals, in order to control the field of 〇SF, the relationship of the distribution of V/G defects in the nitrogen-doped crystals can be referred to. Dedicated Z〆-一一' . .S------------——~利特题JLI-1 - 1 2 9 4 5 2 No. 3 JS carrying - τ - 廪 path is - —_一～~一一-- —— 2 0 0 mm work X, ._? Crystallization X multi-field....菪 is a crystal J-doped with nitrogen, such as above 300 mm It was observed that there was a _____-. a small transposition ring in which an epitaxial defect occurred. However, as in the case of a small transposition ring in the V-domain of the undoped nitrogen C Z crystal, many occurrences occur, which are obtained by the present inventors. [Disclosure of the Invention] Accordingly, the present invention has been made in view of such problems, and its main object is to provide a method in which, when c 3 single crystal is grown, when the nitrogen is not doped, the diameter to 200 mm does not occur minutely. The transposition ring clarifies the reason why it occurs above 300 mm, and establishes a breeding method that can suppress the occurrence of crystal defects. When the epitaxial growth of the obtained single crystal wafer is suppressed, it can be inhibited from occurring in the Jiajing layer. A method of manufacturing a sand single crystal wafer with crystal defects and a sand single crystal wafer and a crystal wafer manufactured therefrom. In order to solve the above problems, the paper size of the single crystal wafer of the present invention is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) - (please read the note on the back and then fill in the page) Property Bureau Staff Consumer Cooperative Printed 1282379 A7 ________B7_ V. Invention Description (5) (Please read the note on the back and fill out this page) The method is characterized by: using the Czochrallski method to grow a diameter of more than 300 mm. In the case of single crystal, at least the center position of the crystal is changed to v-domain, and the cooling rate of the temperature band of 1 0 0 0 0 0 0 ° C can be changed to 1 · 25 ° C / min. Fabrication of single crystal wafers. In this way, the conventional nitrogen-free doping method can be suppressed, and when the diameter becomes 300 nm or more, the index ring occurs at a high density, and at least the center position of the wafer is in the V-domain, and can be manufactured. A single crystal wafer with a diameter of 300 mm or more without an index ring. In this case, the single crystal wafer can be used as a wafer for epitaxial wafer growth. As described above, the single crystal wafer of the present invention is an extremely effective substrate for epitaxial growth. Therefore, when the epitaxial layer is formed on the wafer, it can be used as an apparatus for epitaxial defects to easily and inexpensively manufacture a quality wafer which does not deteriorate the leakage characteristic temple. Printed by the Intellectual Property Office of the Ministry of Economic Affairs, the Consumers' Cooperatives, and the single crystal wafer of the present invention is characterized by: Czochrallski method, a single crystal wafer having a diameter of more than 300 mm in a V-domain, and The index ring does not exist on the wafer. As described above, the wafer of the present invention is formed to have a diameter of 300 mm or more by the CZ method, and also becomes a high-quality single crystal wafer in which the index ring does not exist in the entire wafer. In this case, the single crystal wafer can be used as an epitaxial growth wafer. In this way, there are many fields in V, and the index ring is a sand single crystal wafer that does not exist in the entire wafer, and is an extremely effective substrate for Jiajing growth. This paper scale applies to China National Standard (CNS) A4 specification (210X297 mm) -8- [282379 A7 B7 V. Invention description (8 (please read the back note before filling this page), you can know that you can reduce the micro Further, the lower limit of the cooling rate is not particularly limited as long as the center portion of the crystal is at least V-domain, but is practically 〇·4 t: /min. When the general pull-up condition of the conventional non-doped nitrogen to the crystal of diameter 2000 mm is hardly occurred, the passage time of the temperature band of 1 0 0 0~9 0 is known, even at the most It takes about 80 minutes for the fast case. Therefore, it is confirmed that the cooling rate of the temperature band of 1 〇〇〇 to 90 ° C is about 1 as the condition that the micro index ring does not occur in the v field. · 25 ° C / min (100 ° C / 80 minutes) or less. Therefore, when cultivating crystals with a diameter of more than 300 mm, the single crystal growth is attempted using this pull-up condition. Upper space, set the appropriate size The heat insulating material is not rolled up immediately after the crystallization, and the cooling rate of the temperature band of 1 000 to 9000 ° C is set to be 1 · 25 ° C / min or less, and the crystallization is carried out under the conditions. It is understood that the micro-inversion ring has not occurred at all. The present invention will be described in detail below with reference to the drawings. Printed by the Intellectual Property Office of the Ministry of Economic Affairs, the employee consumption cooperative. First, the single crystal pulling device using the CZ method is used in the present invention. A schematic configuration will be described below with reference to Fig. 1. As shown in Fig. 1, the single crystal pulling device 30 has a pull-up chamber 3 1 and a 坩埚 3 2 installed in the pull-up chamber 3 1 . The heater 3 4 disposed around the crucible 3 2 and the crucible holding shaft 3 3 and its turning mechanism (not shown), and the crystallizing jig 6 holding the seed crystal 5, and the pull-up species The cable 7 of the crystallization fixture 6 and the scale of the rotary or table paper are applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -11 · 1282379 A7 ___B7_ V. Description of the invention (9) (Please read the notes on the back and fill in the form This page is composed of a winding mechanism (not shown) for winding the cable 7.坩埚3 2 is a quartz crucible provided on the side of the side inner crucible melt (melted water) 2, and a graphite crucible is provided on the outer side thereof. Further, a heat insulating material 35 is disposed around the outer side of the heater 34. In order to set the manufacturing conditions of the manufacturing method of the present invention, a ring-shaped solid-liquid interface heat insulating material 8 is provided on the outer periphery of the solid-liquid interface 4 of the crystal, and an upper portion surrounding the heat insulating material 9 is disposed thereon. The material 8 is provided with a small gap 10 between the lower end and the molten water surface 3 of the crucible melt 2. Depending on the condition, the upper surrounding heat insulating material 9 is sometimes not used. Further, a cylindrical cooling device (not shown) that blows the cooling gas and blocks the radiant heat to cool the single crystal may be installed. In addition, a magnet (not shown) is provided on the outer side in the horizontal direction of the pull-up chamber 31, and a magnetic field such as a horizontal direction or a vertical direction is applied to the crucible melt 2 to suppress the convection of the melt, and the single crystal is stabilized and grown. There are also many MCZ methods. The present invention will be specifically described by way of examples and comparative examples of the invention, but the invention is not limited thereto. Printed by the Intellectual Property Office of the Ministry of Economic Affairs, the Consumers' Cooperatives (Example 1). The pull-up device shown in Figure 1 is made of a polycrystalline silicon crucible with a diameter of 32 inches (800 mm). 300 mm, azimuth <1 〇〇>, a single crystal rod 1 used for a conductive p-type single crystal wafer pulls up a plurality of branches (no nitrogen). Before the actual pull-up, change the position or size of the upper part of the upper space of the ΗZ around the heat-insulating material 9 and repeat the pull-up experiment. The paper size is applied to the Chinese National Standard (CNS) Α4 specification (210Χ297 mm). -12- 1282379 A7 ______B7_ V. INSTRUCTIONS (H) The above LPD. As a result, more than one LPD was observed on any wafer (3 〇〇 mm in diameter). (Please read the precautions on the back and fill out this page.) The present invention is not limited to the above embodiment. The embodiment described above is substantially the same as the technical idea described in the patent application scope of the present invention, and any of the effects of the present invention is also included in the technical scope of the present invention. For example, in the above embodiment, the Czochrallski method (CZ method) is used to exemplify the growth of the single crystal. However, the present invention is not limited to these, and it is of course also applicable to the application of a horizontal magnetic field, a longitudinal magnetic field, and a tip to the tantalum melt. The so-called MCZ method of a magnetic field such as a cusp. Further, in the present invention, when the diameter of the single crystal (wafer) is 300 mm or more, and the cooling rate is less than or equal to a predetermined value, the conductivity type of the single crystal, the specific resistance, the oxygen concentration, and the like are applicable, and The same applies to, for example, to promote oxygen deposition, a carbon-doped single crystal. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic diagram of a single crystal pull-up of the C Z method used in accordance with the present invention. Fig. 2 is a distribution diagram of the growth defect area (no impurity-doped crystal) when the radial position of the crystal of the single crystal is the horizontal axis and the crystal pulling speed is taken as the vertical axis. Fig. 3 is a graph showing the relationship between the length of the crystal shoulder and the density of the index ring. This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) -14- 1282379 A7 B7 V. Invention description (12) Main components comparison table 1 矽Single crystal rod 2 矽Melt 3 Melting surface 4 Solid Liquid interface 5 kinds of crystals 6 kinds of crystals 7 Steel rope 8 Solid-liquid interface heat insulation material 9 Upper surrounding heat insulation material 3 Single crystal pulling device 3 1 Pulling room 3 2 坩埚33 坩埚Retaining shaft 3 4 Heater 3 5 Insulation Material (please read the note on the back and then fill out this page) Clothing. Order ΦΙ. Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing gap heat 0 Z 1 Η This paper scale applies Chinese National Standard (CNS) A4 specification (210X297 PCT) -15-