CN104630880A - Czochralski system for forming single crystal bar and technology method of growing single crystal bar - Google Patents
Czochralski system for forming single crystal bar and technology method of growing single crystal bar Download PDFInfo
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- CN104630880A CN104630880A CN201510083137.2A CN201510083137A CN104630880A CN 104630880 A CN104630880 A CN 104630880A CN 201510083137 A CN201510083137 A CN 201510083137A CN 104630880 A CN104630880 A CN 104630880A
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Abstract
The invention provides a czochralski system for forming a single crystal bar and a technology method of growing a single crystal bar. The czochralski system comprises a crucible, a thermal insulation ring and a guide cylinder, wherein the thermal insulation ring is arranged above the crucible; the guide cylinder is arranged above the thermal insulation ring. The czochralski system for forming the single crystal bar is provided with the thermal insulation ring, the thermal insulation ring is close to the crucible, namely is close to the growing interface of the single crystal silicon for effectively restraining the heat dissipation on the surface of the crystal bar, reducing the heat dissipation speed difference of the surface and the centre of the crystal bar, further reducing the crystallization rate difference of the surface and the centre of the single crystal bar, and further reducing and changing the convex-concave degree of the growing interface, the difference value of the specific resistance of the surface and the centre of the single crystal bar is less and the uniformity of the radial direction specific resistance of the single crystal bar can be effectively improved.
Description
Technical field
The present invention relates to czochralski silicon monocrystal field, form the vertical pulling system of single crystal rod in particular to a kind of and adopt the processing method of this vertical pulling system growing single-crystal rod.
Background technology
In pulling of crystals rod process of growth, for controlling its resistivity, need to drop into a small amount of impurity, but due to the different solubility of impurity in the liquid and solid of silicon, wherein impurity concentration is in a liquid greater than its concentration in solids, causes impurity to have the phenomenon of deposition downwards.Silicon liquid conversion is that the time order and function of solid is different, makes the impurity doping concentration of single crystal rod different positions different, and then causes the resistivity of single crystal rod different positions different.
In addition, the most journey spill of growth interface of vertical pulling method manufacture order crystal bar, the heat that this is because in the process of growth of single crystal rod, single crystal rod surface radiating mainly leans on radiant heat, argon gas is taken away and the heat that surface is upwards conducted, make surface radiating fast, crystallization rate is larger; The heat radiation of single crystal rod center main by upward and outward conducting, convection current two aspects of melt, heat do not allow fugitive walk, crystallization rate is less.The size of the radial resistivity of concavo-convex degree direct influence of growth interface, this just causes resistivity to be at grade reduce gradually from outside to inside, and in order to reduce costs, the pulling rate of pulling of crystals rod is all very high, and this more exacerbates the rangeability of resistivity.
The homogeneity method of the radial resistivity of existing improvement changes convection current situation for increasing external magnetic field.The method of above-mentioned increase external magnetic field can increase very large cost, and also has special requirement to crystal pulling technique, and this method is not easily promoted.
Summary of the invention
Main purpose of the present invention is that providing a kind of forms the vertical pulling system of single crystal rod and the processing method of growing single-crystal rod, grows the good single crystal rod problem of resistivity evenness to solve the mode of low cost that can not adopt of the prior art.
To achieve these goals, according to an aspect of the present invention, provide a kind of vertical pulling system forming single crystal rod, above-mentioned vertical pulling system comprises: crucible, insulating ring and guide shell, and above-mentioned insulating ring is arranged on the top of above-mentioned crucible; Above-mentioned guide shell is arranged on the top of above-mentioned insulating ring.
Further, the distance of the top of above-mentioned insulating ring and the bottom of above-mentioned guide shell is 5 ~ 10mm.
Further, the width of above-mentioned insulating ring is 5 ~ 10mm.
Further, the thickness of above-mentioned insulating ring is 5 ~ 10mm.
Further, the internal diameter of above-mentioned insulating ring is 220 ~ 280mm.
Further, above-mentioned insulating ring comprises: insulating ring main body and the reflecting layer be arranged on the inwall of above-mentioned insulating ring main body,
Further, the material of above-mentioned insulating ring main body is graphite.
Further, the material forming above-mentioned reflecting layer is resistant to elevated temperatures reflective substance, and preferred above-mentioned reflective substance is molybdenum or silicon carbide.
According to another aspect of the present invention, provide a kind of processing method of growing single-crystal rod, this processing method adopts above-mentioned vertical pulling system implementation.
Further, above-mentioned processing method fills silicon liquid in the crucible of above-mentioned vertical pulling system, and the liquid level distance of above-mentioned insulating ring and above-mentioned silicon liquid is 10 ~ 20mm.
Further, above-mentioned processing method comprises: step S1, draws above-mentioned N-type czochralski silicon monocrystal with the first brilliant rotary speed and the first draw rate, and above-mentioned first brilliant rotary speed is 10 ~ 15r/min; It is 0.4 ~ 0.8mm/min that above-mentioned first draw rate is drawn; And step S2, draw above-mentioned N-type czochralski silicon monocrystal with the second brilliant rotary speed and the second draw rate, above-mentioned second brilliant rotary speed is 10 ~ 15r/min, and above-mentioned second draw rate is 1.3 ~ 1.5mm/min.
Apply technical scheme of the present invention, in the vertical pulling system of above-mentioned formation single crystal rod, there is insulating ring, and insulating ring and crucible close together, namely the growth interface of distance silicon single crystal is nearer, effectively can suppress the heat radiation on crystal bar surface, reduce the speed difference dispelled the heat with center in single crystal rod surface, thus it is poor with the crystallization rate at center to reduce single crystal rod surface, and then the convex-concave degree of growth interface can be reduced, make single crystal rod center less with the difference of the resistivity on surface, effectively can improve the homogeneity of the radial resistivity of single crystal rod.
Accompanying drawing explanation
The Figure of description forming a application's part is used to provide a further understanding of the present invention, and schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 shows the structural representation of the vertical pulling system that a kind of exemplary embodiment of the application provides;
Fig. 2 shows the horizontal section schematic diagram of the single crystal rod in a kind of preferred embodiment of the application; And
Fig. 3 shows the schematic diagram of the center point P place of the single crystal rod growth interface in a kind of preferred embodiment of the application and the difference of altitude A at marginal point R place.
Embodiment
It is noted that following detailed description is all exemplary, be intended to provide further instruction to the application.Unless otherwise, all technology used herein and scientific terminology have the identical meanings usually understood with the application person of an ordinary skill in the technical field.
It should be noted that used term is only to describe embodiment here, and be not intended to the illustrative embodiments of restricted root according to the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative is also intended to comprise plural form, in addition, it is to be further understood that, " comprise " when using term in this manual and/or " comprising " time, it indicates existing characteristics, step, operation, device, assembly and/or their combination.
For convenience of description, here can usage space relative terms, as " ... on ", " in ... top ", " at ... upper surface ", " above " etc., be used for the spatial relation described as a device shown in the figure or feature and other devices or feature.Should be understood that, space relative terms is intended to comprise the different azimuth in use or operation except the described in the drawings orientation of device.Such as, " in other devices or structure below " or " under other devices or structure " will be positioned as after if the device in accompanying drawing is squeezed, being then described as the device of " above other devices or structure " or " on other devices or structure ".Thus, exemplary term " in ... top " can comprise " in ... top " and " in ... below " two kinds of orientation.This device also can other different modes location (90-degree rotation or be in other orientation), and relatively describe space used here and make respective explanations.
It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.Below with reference to the accompanying drawings and describe the present invention in detail in conjunction with the embodiments.
Above-mentioned as background technology, the method adopting increase external magnetic field to improve radial resistivity in prior art can increase very large process costs, and also has special requirement to crystal pulling technique, and this method is not easily promoted.In order to solve the problem, in a kind of typical embodiment of the application, provide a kind of vertical pulling system forming single crystal rod, as shown in Figure 1, this vertical pulling system comprises: crucible 1, insulating ring 2 and guide shell 3, above-mentioned insulating ring 2 is arranged on the below of above-mentioned guide shell 3, and above-mentioned crucible 1 is arranged on the below of above-mentioned insulating ring 2.
In the vertical pulling system of above-mentioned formation single crystal rod, there is insulating ring 2, and insulating ring 2 and crucible 1 close together, namely the growth interface of distance silicon single crystal is nearer, effectively can suppress the heat radiation on crystal bar surface, reduce the speed difference dispelled the heat with center in single crystal rod surface, thus it is poor with the crystallization rate at center to reduce single crystal rod surface, and then the convex-concave degree of growth interface can be reduced, make single crystal rod center less with the difference of the resistivity on surface, effectively can improve the homogeneity of the radial resistivity of single crystal rod.
In order to make insulating ring play better heat insulation effect, the distance of the top of preferred above-mentioned insulating ring and the bottom of above-mentioned guide shell is 5 ~ 10mm.
In a kind of preferred embodiment of the application, the width of above-mentioned insulating ring is 5 ~ 10mm.Effectively can increase the insulation to single crystal rod surface in this width range, improve growth interface shape, the longitudinal temperature gradient of thermal field system can not be affected again.
In order to the rate of heat release enabling insulating ring effectively suppress single crystal rod surface, improve the work-ing life of itself, the thickness of the preferred above-mentioned insulating ring of the application is 5 ~ 10mm.
In addition, the diameter of preferred above-mentioned insulating ring is 220 ~ 280mm.On the one hand, the diameter of insulating ring should be greater than the diameter of single crystal rod; On the other hand, the diameter of insulating ring should not make too greatly the distance of itself and single crystal rod comparatively large, can not play the rate of heat release effectively suppressing single crystal rod surface, and then can not improve the homogeneity of the radial resistivity of single crystal rod well.
In order to the heat making single crystal rod surface dissipate due to radiation is reflected back toward the surface of single crystal rod, and then make insulating ring more obvious to the restraining effect of single crystal rod surface radiating rate, the preferred above-mentioned insulating ring of the application comprises: insulating ring main body; Reflecting layer, is arranged on the inwall of above-mentioned insulating ring main body.
The material forming the application's insulating ring main body can be selected from the lagging material of this area routine, and such as graphite, carbon-to-carbon, quartz, the material of preferred insulating ring main body is graphite.Graphite can isolate the temperature inside and outside insulating ring better, effectively controls the rate of heat release on single crystal rod surface.
In order to the more how low surface being reflected back toward single crystal rod of heat making insulating ring single crystal rod surface can be dissipated due to radiation, ensure that insulating ring has longer work-ing life simultaneously, the preferred above-mentioned reflective substance of the application is resistant to elevated temperatures reflective substance, and preferred above-mentioned reflective substance is molybdenum or silicon carbide.
In the another kind of typical embodiment of the application, provide a kind of processing method of growing single-crystal rod, above-mentioned processing method adopts above-mentioned vertical pulling system implementation.
The processing method of above-mentioned growing single-crystal rod, adopt above-mentioned vertical pulling system implementation, the heat radiation on single crystal rod surface can be suppressed, thus it is poor with the crystallization rate at center to reduce single crystal rod surface, effectively can improve the homogeneity of the radial resistivity of single crystal rod, make the radial resistivity of the single crystal rod obtained have homogeneity preferably, improve the yield of pulling of crystals rod.
Well known to a person skilled in the art it is the step that the processing method of growing single-crystal rod mainly comprises reinforced, fusing, necking-down Growth, shouldering growth, isodiametric growth and afterbody and grows, above-mentioned reinforced and fusing step all can be carried out in the crucible of vertical pulling system, and necking-down Growth, shouldering growth, isodiametric growth and afterbody grow and carry out at insulating ring and guide shell position.
In order to the difference of the rate of heat release of the rate of heat release and its center that make single crystal rod surface reduces further, improve the homogeneity of the radial resistivity of single crystal rod, the application's selection process method fills silicon liquid in the crucible of above-mentioned vertical pulling system, and the liquid level distance of above-mentioned insulating ring and silicon liquid is 10 ~ 20mm.
In another preferred embodiment of the application, preferred above-mentioned processing method comprises: step S1, draws above-mentioned N-type czochralski silicon monocrystal with the first brilliant rotary speed and the first draw rate, and above-mentioned first brilliant rotary speed is 10 ~ 15r/min; It is 0.4 ~ 0.8mm/min that above-mentioned first draw rate is drawn; And step S2, draw above-mentioned N-type czochralski silicon monocrystal with the second brilliant rotary speed and the second draw rate, above-mentioned second brilliant rotary speed is 10 ~ 15r/min, and above-mentioned second draw rate is 1.3 ~ 1.5mm/min.Wherein, step S1 completes the shouldering growth in the processing method of above-mentioned growing single-crystal rod, and step S2 completes the isodiametric growth in above-mentioned growth technique.
Utilize insulating ring to inhibit the quickening of single crystal rod surface radiating speed in step S1, make the growth interface of single crystal rod keep Raised key axis, inhibit the growth interface of single crystal rod by the transformation of initial Raised key axis to recessed interface; Step S2 adopts high brilliant rotary speed and high draw rate to draw above-mentioned N-type vertical pulling silicon, and Gao Jingzhuan adds the rate of heat release at growth interface place, and Raised key axis draws as the less interface of concavo-convex degree by high pulling rate.
In order to control the pulling process of single crystal rod better, improve the efficiency drawn, the drawing time of the preferred above-mentioned steps S1 of the application is 60 ~ 80min.The drawing time of preferred above-mentioned steps S2 is 20 ~ 23h.
The application another preferred embodiment in, in order to make those skilled in the art understand this programme better, further illustrate beneficial effect of the present invention below with reference to the vertical pulling embodiment of 8 cun of N-type single crystal rod and comparative example.
Embodiment 1
The vertical pulling system that the growth technique process of 8 cun of N-type single crystal rod adopts comprises guide shell, insulating ring, crucible.The distance of the top of insulating ring and the bottom of guide shell is 8mm; The insulation annular body that insulating ring comprises graphite material and the reflecting layer of silicon carbide material being arranged on annular body inwall, the width of insulating ring is 8mm, and thickness is 8mm, and diameter is 250mm, and the thickness in reflecting layer is 0.75mm; Fill silicon liquid in crucible, the liquid level distance of insulating ring and silicon liquid is 15mm.
In growth technique process, first N-type silicon single-crystal 70/2min is drawn with first draw rate of first of 12.5r/min the brilliant rotary speed and 0.6mm/min, its growth interface is inhibit to become spill from convex, then N-type silicon single-crystal 21h is drawn with second draw rate of second of 13r/min the brilliant rotary speed and 1.4mm/min, its form finally forming the growth interface of single crystal rod is in table 2, and the resistivity at the P place, center of the single crystal rod shown in Fig. 2,1/2 radius Q place, R place, edge and the velocity of variation of resistivity are in table 3.
Embodiment 2
The design parameter of vertical pulling system of the growth technique process employing of 8 cun of N-type single crystal rod and the operating parameters of the technological process of growing single-crystal rod are all in table 1, the form of its growth interface is in table 2, and the resistivity at the P place, center of the single crystal rod shown in Fig. 2,1/2 radius Q place, R place, edge and the velocity of variation of resistivity are in table 3.
Embodiment 3
The design parameter of vertical pulling system of the growth technique process employing of 8 cun of N-type single crystal rod and the operating parameters of the technological process of growing single-crystal rod are all in table 1, the form of its growth interface is in table 2, and the resistivity at the P place, center of the single crystal rod shown in Fig. 2,1/2 radius Q place, R place, edge and the velocity of variation of resistivity are in table 3.
Embodiment 4
The design parameter of the vertical pulling system that the growth technique process of 8 cun of N-type single crystal rod adopts and the operating parameters of vertical pulling forming process all in Table in table 1, the form of its growth interface is in table 2, and the resistivity at the P place, center of the single crystal rod shown in Fig. 2,1/2 radius Q place, R place, edge and the velocity of variation of resistivity are in table 3.
Embodiment 5
The design parameter of vertical pulling system of the growth technique process employing of 8 cun of N-type single crystal rod and the operating parameters of the technological process of growing single-crystal rod are all in table 1, the form of its growth interface is in table 2, and the resistivity at the P place, center of the single crystal rod shown in Fig. 2,1/2 radius Q place, R place, edge and the velocity of variation of resistivity are in table 3.
Embodiment 6
The design parameter of vertical pulling system of the growth technique process employing of 8 cun of N-type single crystal rod and the operating parameters of the technological process of growing single-crystal rod are all in table 1, the form of its growth interface is in table 2, and the resistivity at the P place, center of the single crystal rod shown in Fig. 2,1/2 radius Q place, R place, edge and the velocity of variation of resistivity are in table 3.
Embodiment 7
The design parameter of vertical pulling system of the growth technique process employing of 8 cun of N-type single crystal rod and the operating parameters of the technological process of straight growing single-crystal rod are all in table 1, the form of its growth interface is in table 2, and the resistivity at the P place, center of the single crystal rod shown in Fig. 2,1/2 radius Q place, R place, edge and the velocity of variation of resistivity are in table 3.
Embodiment 8
The design parameter of vertical pulling system of the growth technique process employing of 8 cun of N-type single crystal rod and the operating parameters of the technological process of growing single-crystal rod are all in table 1, the form of its growth interface is in table 2, and the resistivity at the P place, center of the single crystal rod shown in Fig. 2,1/2 radius Q place, R place, edge and the velocity of variation of resistivity are in table 3.
Embodiment 9
The design parameter of vertical pulling system of the growth technique process employing of 8 cun of N-type single crystal rod and the operating parameters of the technological process of growing single-crystal rod are all in table 1, the form of its growth interface is in table 2, and the resistivity at the P place, center of the single crystal rod shown in Fig. 2,1/2 radius Q place, R place, edge and the velocity of variation of resistivity are in table 3.
Embodiment 10
The design parameter of vertical pulling system of the growth technique process employing of 8 cun of N-type single crystal rod and the operating parameters of the technological process of growing single-crystal rod are all in table 1, the form of its growth interface is in table 2, and the resistivity at the P place, center of the single crystal rod shown in Fig. 2,1/2 radius Q place, R place, edge and the velocity of variation of resistivity are in table 3.
Embodiment 11
The design parameter of vertical pulling system of the growth technique process employing of 8 cun of N-type single crystal rod and the operating parameters of the technological process of growing single-crystal rod are all in table 1, the form of its growth interface is in table 2, and the resistivity at the P place, center of the single crystal rod shown in Fig. 2,1/2 radius Q place, R place, edge and the velocity of variation of resistivity are in table 3.
Comparative example 1
The vertical pulling system implementation not comprising insulating ring of the growth technique process employing of 8 cun of N-type single crystal rod, the operating parameters of the technological process of growing single-crystal rod is all in table 1, the form of its growth interface is in table 2, and the resistivity at the P place, center of the single crystal rod shown in Fig. 2,1/2 radius Q place, R place, edge and the velocity of variation of resistivity are in table 3.
The center point P place of single crystal rod growth interface as shown in Figure 3 and the difference of altitude A at marginal point R place that draw formation are measured, draws the form of the growth interface of each embodiment and comparative example in table 1, as shown in table 2.
Adopt four probe method test resistance rate, to draw the P place, center of the single crystal rod formed, 1/2 radius Q place, R place, edge resistivity test, test result in table 3, according to test result and formula (ρ
q-ρ
p)/ρ
pcalculate the change in resistance rate of single crystal rod in each example, the results are shown in Table 3.
From embodiment and the comparative example of table 2 and table 3, when there is insulating ring between the crucible and guide shell of vertical pulling system, the concavo-convex degree that the growth interface of the single crystal rod that vertical pulling is formed is is less, improve the homogeneity of the radial resistivity of single crystal rod, the absolute value of its change in resistance rate is less than 8.29%.
From embodiment and the comparative example of table 2 and table 3, distance when the bottom of insulating ring top and guide shell is 5 ~ 10mm, the liquid level distance of insulating ring and silicon liquid is 10 ~ 20mm, the thickness of insulating ring is 5 ~ 10mm, width 5 ~ the 10mm of insulating ring, the internal diameter of insulating ring is 220 ~ 280mm, with first of 10 ~ 15r/min the brilliant rotary speed and 0.4 ~ 0.8mm/min first draw rate czochralski silicon monocrystal, 60 ~ 80min, then czochralski silicon monocrystal list is continued with the brilliant rotary speed of 10 ~ 15r/min second and 1.3 ~ 1.5mm/min second draw rate, make the concavo-convex degree of the growth interface of the final single crystal rod formed less, the absolute value of difference of altitude A is less than 22, effectively improve the homogeneity of the radial resistivity of single crystal rod, the radial resistivity of the single crystal rod obtained is made to have homogeneity preferably, improve the yield of device.
Table 1
Table 2
| A(mm) | |
| Embodiment 1 | -2 |
| Embodiment 2 | -10 |
| Embodiment 3 | -8 |
| Embodiment 4 | -12 |
| Embodiment 5 | -22 |
| Embodiment 6 | -7 |
| Embodiment 7 | -8 |
| Embodiment 8 | -9 |
| Embodiment 9 | -8 |
| Embodiment 10 | -10 |
| Embodiment 11 | 5 |
| Comparative example 1 | -25 |
Table 3
| ρ P | ρ Q | ρ R | The velocity of variation of resistivity | |
| Embodiment 1 | 3.67 | 3.85 | 4.63 | 4.90％ |
| Embodiment 2 | 3.65 | 3.92 | 4.77 | 6.89％ |
| Embodiment 3 | 3.67 | 3.9 | 4.5 | 5.90％ |
| Embodiment 4 | 3.54 | 3.84 | 4.3 | 7.81％ |
| Embodiment 5 | 3.21 | 3.5 | 4.1 | 8.29％ |
| Embodiment 6 | 3.87 | 4.08 | 4.56 | 5.15％ |
| Embodiment 7 | 3.91 | 4.17 | 4.82 | 6.65％ |
| Embodiment 8 | 3.15 | 3.39 | 4.02 | 7.62％ |
| Embodiment 9 | 3.22 | 3.46 | 4.11 | 7.45％ |
| Embodiment 10 | 3.53 | 3.74 | 4.26 | 5.59％ |
| Embodiment 11 | 3.62 | 3.38 | 3.25 | -7.10％ |
| Comparative example 1 | 3.81 | 4.22 | 4.51 | 10.76％ |
As can be seen from the above description, the above embodiments of the present invention achieve following technique effect:
1) insulating ring in the vertical pulling system of, the formation single crystal rod of the application can suppress the heat radiation on crystal bar surface, reduce the speed difference dispelled the heat with center in single crystal rod surface, thus it is poor with the crystallization rate at center to reduce single crystal rod surface, and then the convex-concave degree of growth interface can be reduced, make single crystal rod center less with the difference of the resistivity on surface, effectively can improve the homogeneity of the radial resistivity of single crystal rod.
2), the processing method of the growing single-crystal rod of the application adopts above-mentioned vertical pulling system implementation, the heat radiation on single crystal rod surface can be suppressed, thus it is poor with the crystallization rate at center to reduce single crystal rod surface, effectively can improve the homogeneity of the radial resistivity of single crystal rod, make the radial resistivity of the single crystal rod obtained have homogeneity preferably, improve the yield of pulling of crystals rod.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (11)
1. form a vertical pulling system for single crystal rod, it is characterized in that, described vertical pulling system comprises:
Crucible;
Insulating ring, is arranged on the top of described crucible; And
Guide shell, is arranged on the top of described insulating ring.
2. vertical pulling system according to claim 1, is characterized in that, the distance of the top of described insulating ring and the bottom of described guide shell is 5 ~ 10mm.
3. vertical pulling system according to claim 1, is characterized in that, the width of described insulating ring is 5 ~ 10mm.
4. vertical pulling system according to claim 1, is characterized in that, the thickness of described insulating ring is 5 ~ 10mm.
5. vertical pulling system according to claim 1, is characterized in that, the internal diameter of described insulating ring is 220 ~ 280mm.
6. vertical pulling system according to claim 1, is characterized in that, described insulating ring comprises:
Insulating ring main body; And
Reflecting layer, is arranged on the inwall of described insulating ring main body.
7. vertical pulling system according to claim 6, is characterized in that, the material of described insulating ring main body is graphite.
8. vertical pulling system according to claim 6, is characterized in that, the material forming described reflecting layer is resistant to elevated temperatures reflective substance, and preferred described reflective substance is molybdenum or silicon carbide.
9. a processing method for growing single-crystal rod, is characterized in that, described processing method adopts the vertical pulling system implementation according to any one of claim 1 to 8.
10. processing method according to claim 9, is characterized in that, described processing method fills silicon liquid in the crucible of described vertical pulling system, and the liquid level distance of described insulating ring and described silicon liquid is 10 ~ 20mm.
11. processing methodes according to claim 9, is characterized in that, described processing method comprises:
Step S1, draws described N-type czochralski silicon monocrystal with the first brilliant rotary speed and the first draw rate, and described first brilliant rotary speed is 10 ~ 15r/min; It is 0.4 ~ 0.8mm/min that described first draw rate is drawn; And
Step S2, draws described N-type czochralski silicon monocrystal with the second brilliant rotary speed and the second draw rate, and described second brilliant rotary speed is 10 ~ 15r/min, and described second draw rate is 1.3 ~ 1.5mm/min.
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