CN206204477U - Block ring, the component for improving monocrystalline silicon radial direction resistivity evenness - Google Patents
Block ring, the component for improving monocrystalline silicon radial direction resistivity evenness Download PDFInfo
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- CN206204477U CN206204477U CN201621102268.7U CN201621102268U CN206204477U CN 206204477 U CN206204477 U CN 206204477U CN 201621102268 U CN201621102268 U CN 201621102268U CN 206204477 U CN206204477 U CN 206204477U
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- block ring
- monocrystalline silicon
- radial direction
- choked flow
- melt
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Abstract
The utility model discloses a kind of block ring, it includes choked flow wall, the choked flow wall is tubular, also include supporting part and suspension part, the choked flow wall hangs on the lower section of the supporting part by the suspension part, the suspension part is flexibility or rigidity, also disclose a kind of component for improving monocrystalline silicon radial direction resistivity evenness, it includes foregoing block ring, also include guide shell and melt reservoirs, the block ring is installed on the lower end of the guide shell, the melt reservoirs are provided with upward opening, the guide shell is used to set protection air-blowing to bath surface, the block ring is stretched into the melt reservoirs.The utility model can improve monocrystalline silicon radial direction resistivity evenness, especially N-type<111>Crystal orientation monocrystalline silicon radial direction resistivity evenness.
Description
Technical field
The utility model is related to a kind of block ring and improves the component of monocrystalline silicon radial direction resistivity evenness.
Background technology
Crystal growth is that the polysilicon block of semiconductor grade silicon is converted into one block of big monocrystalline silicon, the monocrystalline silicon quilt after growth
Referred to as silicon ingot.Now produce for silicon chip prepare the most common technology of silicon single crystal rod be Czochralski (CZ) method, this be by
20 the beginning of the century its utility model person name name.Czochralski (CZ) method growing single-crystal silicons are half for having melted
Conductor level silicon liquid body becomes the solid silicon ingot for having correct crystal orientation and being doped to N-type or p-type.More than 85% monocrystalline silicon is to adopt
Grown out with CZ methods.
One block of monocrystalline silicon with required crystal orientation comes growing silicon ingot, silicon single crystal rod the answering just as seed crystal of growth as seed crystal
Product.Silicon and the single crystal seed contact of fusing and precise control contact surface, so as to accurately replicate seed crystal structure.The silicon of fusing is placed on
In silica crucible, also a small amount of dopant makes its generation N-type or P-type silicon.Silicon in crucible uses resistance by crystal pulling stove heat
Heating or radio frequency (RF) heating coil.When silicon is heated, it becomes liquid, is called melt；Seed crystal silicon touches vertical pulling device
And start the new crystal structure of growth.Seed crystal is placed on bath surface and the lentamente pull-up in rotary course.As seed crystal is straight
Melt is left during drawing, the liquid on melt can be improved because of surface tension.Interface on seed crystal distributes heat simultaneously downwards
Solidified towards the direction of melt.As seed crystal is rotating from melt lira, the monocrystalline for having same crystal orientation with seed crystal just grows
Come.Different silicon ingot growth results depends on direction of rotation of the seed crystal relative to crucible and speed.
The purpose of vertical pulling method is accurate duplication seed crystal structure while realizing uniform doping concentration, obtains suitable silicon ingot straight
Footpath simultaneously limits impurity and is incorporated into silicon.Two major parameters for influenceing vertical pulling method are rate of extension and Crystal Rotation speed.
It has been briefly discussed above the CZ method preparation process of monocrystalline silicon.But there is Segregation in preparation process, this can cause
Silicon single crystal rod axial direction impurities concentration distribution is uneven.The uniformity of monocrystalline silicon piece radial direction resistivity and impurity in crystal growing process
Effective segregation coefficient is relevant, effective segregation coefficient keffCan be given by Burton-Prim-Schlicter relational expressions：
Wherein, k0It is the equilibrium segregation coefficient of impurity, D is the diffusion coefficient of impurity, and f is monocrystalline silicon growing speed, according to
The result of liquid flow model under infinitely great rotating circular disk, the thickness of solute boundary layer is δ=1.6D1/3υ1/6ω-1/2(υ is silicon melt
Kinematic viscosity coefficient, ω is Crystal Rotation speed).Meanwhile, pulling of silicon single crystal in growth course, by melt thermal convection current
Influence so that monocrystalline silicon edge has thinner solute boundary layer than center, and it is smaller effective to cause edge to have than center
Segregation coefficient keff, so as to increase the inhomogeneities of monocrystalline silicon piece radial direction impurity concentration and resistivity.Below in conjunction with brief description of the drawings.
It is boundary layer 12 because silicon rod 1 has the growth interface of bending with reference to Fig. 1, this can cause to be cut out from silicon rod 1 again
The radial direction impurities concentration distribution of monocrystalline silicon piece 13 it is uneven, and then influence the uniformity of radial direction resistivity.Particularly with N-type<111>
Crystal orientation monocrystalline silicon, because impurity segregation coefficient is small, and is subject to<111>The factor influence such as direction of growth orientation and facet effect,
Resistivity radial uniformity can be worse.
With reference to Fig. 2, silicon rod 1 is rotated by growth in melt 11, and silicon rod 1 with angular speed ω.The immersion of the lower end of silicon rod 11 is molten
The silicon for having part forming crystal in body 11 forms boundary layer 12, and melt 11 is heated and pours into surface and cool down, and forms arrow
The thermal convection current in direction, impact is produced to boundary layer 12.
In order to reduce the non-uniformity in radial position of monocrystalline silicon piece Impurity Distribution, existing way is typically to increase Crystal Rotation speed
Rate ω, carrys out the thickness of thinning solute boundary layer, and relatively thin solute boundary layer lesser extent will be influenceed by thermal convection current.Together
When, increase thermal convection current of the Crystal Rotation speed to melt has reverse inhibition in itself, weakens its shadow to solute boundary layer
Ring.
But, if improving Crystal Rotation speed during monocrystalline silicon growing, long crystal furnace machinery knot on the one hand can be triggered
The unstability of structure, causes crystal to rock；On the other hand, too fast crystal rotation is easily caused monocrystalline silicon torsional deformation.Both
The reduction of monocrystalline silicon yield rate will be caused.
Utility model content
The purpose of this utility model is to overcome deficiency of the prior art, there is provided one kind can improve monocrystalline silicon radially electricity
Resistance rate uniformity, especially N-type<111>The block ring of crystal orientation monocrystalline silicon radial direction resistivity evenness.
To realize object above, the utility model is achieved through the following technical solutions：
A kind of block ring, including choked flow wall, the choked flow wall are tubular；Also include supporting part and suspension part, the choked flow
Wall hangs on the lower section of the supporting part by the suspension part；The suspension part is flexibility or rigidity.
According to one embodiment of the present utility model, the suspension part is at least one lateral column, the lateral column two ends difference
Connect the supporting part and the suspension part.
According to one embodiment of the present utility model, the suspension part is the drop handle coaxial with the choked flow wall.
According to one embodiment of the present utility model, the suspension part is at least one lateral column, the lateral column two ends difference
Connect the supporting part and the suspension part；The lateral column is integrally formed with the suspension part, the choked flow wall.
According to one embodiment of the present utility model, the height of the choked flow wall is not less than 10mm.
According to one embodiment of the present utility model, material is high-purity quartz.
According to one embodiment of the present utility model, the upper end of the stack shell is provided with flange, and the flange is to the stack shell
Outside turns down.
The utility model additionally provides a kind of component for improving monocrystalline silicon radial direction resistivity evenness, including as described above
Block ring, also including guide shell and melt reservoirs, the supporting part is installed on the lower end of the guide shell；The melt reservoirs set
There is upward opening, the guide shell is used to set protection air-blowing to bath surface；The block ring stretches into the melt
In container.
According to one embodiment of the present utility model, the melt reservoirs are crucible, and the protection gas is inert gas.
According to one embodiment of the present utility model, the melt reservoirs are silica crucible, and the protection gas is argon gas.
The block ring that the utility model is provided, material is high-purity quartz, is greatly reduced to introducing impurity in melt.Choked flow
In ring insertion melt, impact of the thermal convection current of melt to solute boundary layer is blocked, so as to avoid producing silicon single crystal rod center and side
The solute boundary layer difference in thickness of edge, and improve the impurity concentration and resistivity evenness of radial direction.Lateral opening on block ring
Block ring deadweight can be reduced, be easy to pick and place, and can be used to catch on block ring.The lower edge of block ring lateral opening and the stack shell
The distance between lower edge is not less than 30mm, it is ensured that block ring bottom at least 30mm is continuous tubular and completely separated choked flow
Melt inside and outside ring, blocks thermal convection current, and melt liquid level decline will not cause block ring during pulling monocrystal silicon rod
With melt separation and lose choked flow act on.The block ring provided using the utility model, it is radially miscellaneous to reach improvement silicon single crystal rod
The purpose of matter concentration and resistivity evenness, without increasing Crystal Rotation speed, thus can keep long crystal furnace mechanical structure
Stability, crystal rocks small；Crystal rotation is small, and monocrystalline silicon is difficult torsional deformation.So as to the block ring that the utility model is provided can
Greatly improve the yield rate of monocrystalline silicon.
The component of the improvement monocrystalline silicon radial direction resistivity evenness that the utility model is provided, including above-mentioned block ring, material
It is high-purity quartz, greatly reduces to introducing impurity in melt.In block ring insertion melt, the thermal convection current of melt is blocked to solute
The impact in boundary layer, so as to avoid producing the solute boundary layer difference in thickness of silicon single crystal rod center and peripheral, and improves radial direction
Impurity concentration and resistivity evenness.The component of the improvement monocrystalline radial direction resistivity evenness provided using the utility model, be
The purpose for improving silicon single crystal rod radial direction impurity concentration and resistivity evenness is reached, without increasing Crystal Rotation speed, thus can
To keep the stability of long crystal furnace mechanical structure, crystal rocks small；Crystal rotation is small, and monocrystalline silicon is difficult torsional deformation.So as to this
The component of the improvement monocrystalline radial direction resistivity evenness that utility model is provided is greatly improved the yield rate of monocrystalline silicon.
The block ring provided using the utility model, the component and method for improving monocrystalline silicon radial direction resistivity evenness,
Under following experiment condition, grow 2 respectively and gently mix Ph silicon single crystal rods, crystal orientation is<111>, resistivity 30-60 Ω cm, 40kg throwings
Material, makes 5 inches of crystal bars.
Two monocrystalline silicon that will be grown are sampled every 100mm, and carry out resistivity and uniformity test, arrange dependency number
It is as a result as follows according to rear：
| Position (mm) | 0 | 100 | 200 | 300 | 400 | 500 |
| Monocrystalline silicon one | 10.50% | 7.20% | 8.30% | 13.20% | 12.30% | 15.40% |
| Monocrystalline silicon two | 23.24% | 21.56% | 26.87% | 23.39% | 26.57% | 27.81% |
| Position (mm) | 600 | 700 | 800 | 900 | 1000 | - |
| Monocrystalline silicon one | 14.60% | 13.80% | 11.80% | 14.20% | 11.70 | - |
| Monocrystalline silicon two | 26.97% | 25.66% | 27.23% | 27.41% | 28.37% | - |
As can be seen here, the utility model is provided block ring, the component of improvement monocrystalline radial direction resistivity evenness and method
Silicon single crystal rod radial direction impurity concentration and resistivity evenness can be effectively improved, yield rate is improved；And Crystal Rotation speed is small, rocks
It is corresponding also small.
Brief description of the drawings
Fig. 1 be CZ method drawn monocrystalline silicons during, silicon rod, silicon rod draw when growth interface and monocrystalline is cut by silicon rod
The schematic diagram of silicon chip；
Fig. 2 shows that the thermal convection current in melt produces the principle impacted to solute boundary layer；
Fig. 3 is guide shell, the structural representation of crucible；
Fig. 4 is a kind of structural representation of block ring of the utility model；
Fig. 5 is the structural representation of another block ring of the utility model；
Fig. 6 is the structural representation that block ring and guide shell in Fig. 5 are used cooperatively；
The structural representation that Fig. 7 is in Fig. 6 after guide shell structural change, block ring and guide shell are used cooperatively.
Specific embodiment
The utility model is described in detail below in conjunction with the accompanying drawings：
Embodiment one
With reference to Fig. 4, a kind of block ring 2, overall cylindrical, upper and lower ends opening is made by high purity quartz.Need
It is noted that " on ", D score be relativity concept that the orientation according to Fig. 4 is used, it is intended in clearly illustrating the present embodiment
Technical scheme, without constituting the limitation to technical scheme and claim.Stack shell radially offers three lateral openings 22.Side
The quantity of opening can according to actual conditions be set to one, two, three, four or more.Lateral opening 22 is by block ring 2
It is divided into drop handle 21 and the two parts of choked flow wall 24；Stack shell between adjacent side opening 22 constitutes the connection drop handle 21 of lateral column 23 and resistance
Stream wall 24.The height of choked flow wall 24 is 50mm.The height of choked flow wall 24 can be set on demand, not less than 10mm.
On the basis of Fig. 3, block ring 2 is suspended on the lower end of guide shell 3 by drop handle 21.It is made to high-purity quartz
Crucible 4 in input raw silicon, and heat cause raw silicon melt to form melt.Adjust the height of block ring 2 so that choked flow wall
In 24 immersion silicon melts, while ensure melt liquid level in the lower section of the upper end of choked flow wall 24, so that the liquid level of melt is by choked flow wall 24
Cut-off, will not be sprung up from lateral opening 22 to the inner side of block ring 2.
Argon gas is blown into from top to down to the bath surface in crucible 4 as protection gas from guide shell 3.Argon gas passes through side
Flow out opening 22.Guide shell 3 can also shield the hyperthermia radiation of the heater for carrying out self-supporting silicon melt heating in monocrystalline silicon growing.
Melt liquid level on the inside of block ring, using CZ farads of straight silicon single crystal rod.Wherein, crucible 4 and silicon single crystal rod are to phase
Anti- direction rotates.
With the drawing of silicon single crystal rod, crucible 4 is raised upwards so that melt liquid level is highly constant relative to block ring 2.
Embodiment two
Block ring in this example is similar with embodiment one with guide shell, but slightly distinguishes.
With reference to Fig. 5, Fig. 6, on the basis of Fig. 4, the outside of upper end drop handle 21 of block ring 2 is provided with the first flange 25, the
One flange 25 is to the turnover of the outside of block ring 2；The lower end of guide shell 3 be then provided with fold inward, for catch on the first flange 25
Two flanges 31.Block ring 2 hang on the lower end of guide shell 3, with reference to Fig. 6.It should be noted that " on ", D score be according to Fig. 5 and
The relativity concept that orientation shown in Fig. 6 is used, it is intended to the technical scheme in the present embodiment is clearly illustrated, without constituting to technical side
The limitation of case and claim.
This example remaining similar embodiment one, it will not go into details.
Embodiment three
This example is similar with embodiment two, differs only in, and with reference to Fig. 7, some breach is distributed with the second flange 31
32, when breach 32 is easy to instrument to stretch into guide shell inside and catch on the drop handle 21 of block ring 2, take out block ring 2.Remaining similar reality
Example two is applied, it will not go into details.
Example IV
This example is similar with embodiment one, and difference is that drop handle 21 and choked flow wall 24 integratedly connect not by lateral column 23
It is connected together, but choked flow wall 24 is suspended on the lower section of drop handle 21 by using heat-resisting flexible material, so that choked flow wall 24
In immersion melt.Remaining similar embodiment one, it will not go into details.
The block ring that the utility model is provided, material is high-purity quartz, is greatly reduced to introducing impurity in melt.Choked flow
In ring insertion melt, impact of the thermal convection current of melt to solute boundary layer is blocked, so as to avoid producing silicon single crystal rod center and side
The solute boundary layer difference in thickness of edge, and improve the impurity concentration and resistivity evenness of radial direction.Lateral opening on block ring
Block ring deadweight can be reduced, be easy to pick and place, and can be used to catch on block ring.The lower edge of block ring lateral opening and the stack shell
The distance between lower edge is not less than 30mm, it is ensured that block ring bottom at least 30mm is continuous tubular and completely separated choked flow
Melt inside and outside ring, blocks thermal convection current, and melt liquid level decline will not cause block ring during pulling monocrystal silicon rod
With melt separation and lose choked flow act on.The block ring provided using the utility model, it is radially miscellaneous to reach improvement silicon single crystal rod
The purpose of matter concentration and resistivity evenness, without increasing Crystal Rotation speed, thus can keep long crystal furnace mechanical structure
Stability, crystal rocks small；Crystal rotation is small, and monocrystalline silicon is difficult torsional deformation.So as to the block ring that the utility model is provided can
Greatly improve the yield rate of monocrystalline silicon.
The component of the improvement monocrystalline silicon radial direction resistivity evenness that the utility model is provided, including above-mentioned block ring, material
It is high-purity quartz, greatly reduces to introducing impurity in melt.In block ring insertion melt, the thermal convection current of melt is blocked to solute
The impact in boundary layer, so as to avoid producing the solute boundary layer difference in thickness of silicon single crystal rod center and peripheral, and improves radial direction
Impurity concentration and resistivity evenness.The component of the improvement monocrystalline radial direction resistivity evenness provided using the utility model, be
The purpose for improving silicon single crystal rod radial direction impurity concentration and resistivity evenness is reached, without increasing Crystal Rotation speed, thus can
To keep the stability of long crystal furnace mechanical structure, crystal rocks small；Crystal rotation is small, and monocrystalline silicon is difficult torsional deformation.So as to this
The component of the improvement monocrystalline radial direction resistivity evenness that utility model is provided is greatly improved the yield rate of monocrystalline silicon.
The block ring provided using the utility model, the component and method for improving monocrystalline silicon radial direction resistivity evenness,
Under following experiment condition, grow 2 respectively and gently mix Ph silicon single crystal rods, crystal orientation is<111>, resistivity 30-60 Ω cm, 40kg throwings
Material, makes 5 inches of crystal bars.
Two monocrystalline silicon that will be grown are sampled every 100mm, and carry out resistivity and uniformity test, arrange dependency number
It is as a result as follows according to rear：
| Position (mm) | 0 | 100 | 200 | 300 | 400 | 500 |
| Monocrystalline silicon one | 10.50% | 7.20% | 8.30% | 13.20% | 12.30% | 15.40% |
| Monocrystalline silicon two | 23.24% | 21.56% | 26.87% | 23.39% | 26.57% | 27.81% |
| Position (mm) | 600 | 700 | 800 | 900 | 1000 | - |
| Monocrystalline silicon one | 14.60% | 13.80% | 11.80% | 14.20% | 11.70 | - |
| Monocrystalline silicon two | 26.97% | 25.66% | 27.23% | 27.41% | 28.37% | - |
As can be seen here, the utility model is provided block ring, the component of improvement monocrystalline radial direction resistivity evenness and method
Silicon single crystal rod radial direction impurity concentration and resistivity evenness can be effectively improved, yield rate is improved；And Crystal Rotation speed is small, rocks
It is corresponding also small.
Embodiment in the utility model is only used for illustrating the utility model, does not constitute to right
Limitation, other substantial equivalent replacements that those skilled in that art are contemplated that, in the utility model protection domain
It is interior.
Claims (9)
1. a kind of block ring, it is characterised in that including choked flow wall, the choked flow wall is tubular；Also include supporting part and suspension part,
The choked flow wall hangs on the lower section of the supporting part by the suspension part；The suspension part is flexibility or rigidity.
2. block ring according to claim 1, it is characterised in that the suspension part is at least one lateral column, the lateral column
Two ends connect the supporting part and the suspension part respectively.
3. block ring according to claim 1, it is characterised in that the suspension part is carries coaxial with the choked flow wall
Ring.
4. block ring according to claim 3, it is characterised in that the suspension part is at least one lateral column, the lateral column
Two ends connect the supporting part and the suspension part respectively；The lateral column is integrally formed with the suspension part, the choked flow wall.
5. block ring according to claim 1, it is characterised in that the height of the choked flow wall is not less than 10mm.
6. block ring according to claim 1, it is characterised in that material is high-purity quartz.
7. it is a kind of improve monocrystalline silicon radial direction resistivity evenness component, it is characterised in that including any according to claim 1-6
Block ring described in, also including guide shell and melt reservoirs, the supporting part is installed on the lower end of the guide shell；It is described molten
Body container is provided with upward opening, and the guide shell is used to set protection air-blowing to bath surface；The block ring is stretched into
In the melt reservoirs.
8. it is according to claim 7 improve monocrystalline silicon radial direction resistivity evenness component, it is characterised in that the melt
Container is crucible, and the protection gas is inert gas.
9. it is according to claim 8 improve monocrystalline silicon radial direction resistivity evenness component, it is characterised in that the melt
Container is silica crucible, and the protection gas is argon gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621102268.7U CN206204477U (en) | 2016-09-30 | 2016-09-30 | Block ring, the component for improving monocrystalline silicon radial direction resistivity evenness |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621102268.7U CN206204477U (en) | 2016-09-30 | 2016-09-30 | Block ring, the component for improving monocrystalline silicon radial direction resistivity evenness |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206204477U true CN206204477U (en) | 2017-05-31 |
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ID=58762404
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| Application Number | Title | Priority Date | Filing Date |
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| CN201621102268.7U Active CN206204477U (en) | 2016-09-30 | 2016-09-30 | Block ring, the component for improving monocrystalline silicon radial direction resistivity evenness |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106283177A (en) * | 2016-09-30 | 2017-01-04 | 上海合晶硅材料有限公司 | Block ring, the assembly improving monocrystal silicon radially resistivity evenness and method |
| CN110965118A (en) * | 2019-12-25 | 2020-04-07 | 西安奕斯伟硅片技术有限公司 | Guide cylinder device and crystal pulling furnace |
-
2016
- 2016-09-30 CN CN201621102268.7U patent/CN206204477U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106283177A (en) * | 2016-09-30 | 2017-01-04 | 上海合晶硅材料有限公司 | Block ring, the assembly improving monocrystal silicon radially resistivity evenness and method |
| CN110965118A (en) * | 2019-12-25 | 2020-04-07 | 西安奕斯伟硅片技术有限公司 | Guide cylinder device and crystal pulling furnace |
| CN110965118B (en) * | 2019-12-25 | 2022-04-15 | 西安奕斯伟材料科技有限公司 | Guide cylinder device and crystal pulling furnace |
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Address after: 201617 no.558, changta Road, Shihudang Town, Songjiang District, Shanghai Patentee after: Shanghai crystal silicon material Co., Ltd Address before: 201617 No. 500 South noble Road, Shanghai, Songjiang District Patentee before: Shanghai Hejing Silicon Material Co., Ltd. |