JP7493400B2 - エッチング方法、プラズマ処理装置、及び基板処理システム - Google Patents

エッチング方法、プラズマ処理装置、及び基板処理システム Download PDF

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JP7493400B2
JP7493400B2 JP2020121613A JP2020121613A JP7493400B2 JP 7493400 B2 JP7493400 B2 JP 7493400B2 JP 2020121613 A JP2020121613 A JP 2020121613A JP 2020121613 A JP2020121613 A JP 2020121613A JP 7493400 B2 JP7493400 B2 JP 7493400B2
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organic film
gas
film
plasma
substrate
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JP2021048390A (ja
JP2021048390A5 (https=
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隆幸 勝沼
昌伸 本田
由太 中根
慎也 石川
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to KR1020200112494A priority Critical patent/KR102901251B1/ko
Priority to CN202010914258.8A priority patent/CN112509920B/zh
Priority to US17/015,088 priority patent/US11476123B2/en
Priority to SG10202008872VA priority patent/SG10202008872VA/en
Publication of JP2021048390A publication Critical patent/JP2021048390A/ja
Priority to US17/952,326 priority patent/US20230058079A1/en
Publication of JP2021048390A5 publication Critical patent/JP2021048390A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2020121613A 2019-09-13 2020-07-15 エッチング方法、プラズマ処理装置、及び基板処理システム Active JP7493400B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020200112494A KR102901251B1 (ko) 2019-09-13 2020-09-03 에칭 방법, 플라즈마 처리 장치 및 기판 처리 시스템
CN202010914258.8A CN112509920B (zh) 2019-09-13 2020-09-03 蚀刻方法、等离子体处理装置和基片处理系统
US17/015,088 US11476123B2 (en) 2019-09-13 2020-09-09 Etching method, plasma processing apparatus, and substrate processing system
SG10202008872VA SG10202008872VA (en) 2019-09-13 2020-09-11 Etching method, plasma processing apparatus, and substrate processing system
US17/952,326 US20230058079A1 (en) 2019-09-13 2022-09-26 Etching method, plasma processing apparatus, and substrate processing system
KR1020250153510A KR20250154349A (ko) 2019-09-13 2025-10-22 에칭 방법, 플라즈마 처리 장치 및 기판 처리 시스템

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Application Number Priority Date Filing Date Title
JP2019167063 2019-09-13
JP2019167063 2019-09-13

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JP2021048390A JP2021048390A (ja) 2021-03-25
JP2021048390A5 JP2021048390A5 (https=) 2023-04-13
JP7493400B2 true JP7493400B2 (ja) 2024-05-31

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US (1) US20230058079A1 (https=)
JP (1) JP7493400B2 (https=)
KR (2) KR102901251B1 (https=)
CN (1) CN112509920B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11538692B2 (en) * 2021-05-21 2022-12-27 Tokyo Electron Limited Cyclic plasma etching of carbon-containing materials
JP7731313B2 (ja) * 2022-04-12 2025-08-29 東京エレクトロン株式会社 半導体装置の製造方法および半導体装置の製造システム
JP2023183485A (ja) * 2022-06-16 2023-12-28 東京エレクトロン株式会社 基板処理装置
JP2025525607A (ja) * 2022-07-22 2025-08-05 ラム リサーチ コーポレーション シミュレートされたボッシュプロセスによる高アスペクト比炭素エッチング
WO2025215890A1 (ja) * 2024-04-09 2025-10-16 東京エレクトロン株式会社 プラズマ処理装置

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WO2007132879A1 (ja) 2006-05-17 2007-11-22 Nec Corporation 半導体装置、半導体装置の製造方法及び半導体製造装置
JP2009117817A (ja) 2007-10-12 2009-05-28 Air Products & Chemicals Inc 反射防止膜
US20090286400A1 (en) 2008-05-13 2009-11-19 Lam Research Corporation Plasma process with photoresist mask pretreatment
JP2010062433A (ja) 2008-09-05 2010-03-18 Sekisui Chem Co Ltd シリコン含有膜のエッチング方法および装置
JP2011066441A (ja) 2002-04-16 2011-03-31 Tokyo Electron Ltd フォトレジストおよびエッチング残渣の除去方法
JP2014523110A (ja) 2011-06-15 2014-09-08 アプライド マテリアルズ インコーポレイテッド レーザスクライビング・プラズマエッチングによるデバイスの個片化用のインサイチュー蒸着マスク層
JP2016119357A (ja) 2014-12-19 2016-06-30 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2017069432A (ja) 2015-09-30 2017-04-06 株式会社デンソー 半導体装置の製造方法
JP2018200925A (ja) 2017-05-25 2018-12-20 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP2019050342A (ja) 2017-09-12 2019-03-28 東京エレクトロン株式会社 被加工物を処理する方法
JP2019114778A (ja) 2017-12-25 2019-07-11 東京エレクトロン株式会社 基板を処理する方法
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JP2011066441A (ja) 2002-04-16 2011-03-31 Tokyo Electron Ltd フォトレジストおよびエッチング残渣の除去方法
WO2007078011A1 (ja) 2006-01-06 2007-07-12 Nec Corporation 多層配線の製造方法と多層配線構造
WO2007132879A1 (ja) 2006-05-17 2007-11-22 Nec Corporation 半導体装置、半導体装置の製造方法及び半導体製造装置
JP2009117817A (ja) 2007-10-12 2009-05-28 Air Products & Chemicals Inc 反射防止膜
US20090286400A1 (en) 2008-05-13 2009-11-19 Lam Research Corporation Plasma process with photoresist mask pretreatment
JP2010062433A (ja) 2008-09-05 2010-03-18 Sekisui Chem Co Ltd シリコン含有膜のエッチング方法および装置
JP2014523110A (ja) 2011-06-15 2014-09-08 アプライド マテリアルズ インコーポレイテッド レーザスクライビング・プラズマエッチングによるデバイスの個片化用のインサイチュー蒸着マスク層
JP2016119357A (ja) 2014-12-19 2016-06-30 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2017069432A (ja) 2015-09-30 2017-04-06 株式会社デンソー 半導体装置の製造方法
JP2018200925A (ja) 2017-05-25 2018-12-20 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP2019050342A (ja) 2017-09-12 2019-03-28 東京エレクトロン株式会社 被加工物を処理する方法
JP2019114778A (ja) 2017-12-25 2019-07-11 東京エレクトロン株式会社 基板を処理する方法
WO2019169102A1 (en) 2018-02-28 2019-09-06 Applied Materials, Inc. Electrostatic chuck with multiple radio frequency meshes to control plasma uniformity

Also Published As

Publication number Publication date
KR20210031827A (ko) 2021-03-23
JP2021048390A (ja) 2021-03-25
KR102901251B1 (ko) 2025-12-16
KR20250154349A (ko) 2025-10-28
US20230058079A1 (en) 2023-02-23
CN112509920A (zh) 2021-03-16
CN112509920B (zh) 2026-01-09

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