CN112509920B - 蚀刻方法、等离子体处理装置和基片处理系统 - Google Patents

蚀刻方法、等离子体处理装置和基片处理系统

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Publication number
CN112509920B
CN112509920B CN202010914258.8A CN202010914258A CN112509920B CN 112509920 B CN112509920 B CN 112509920B CN 202010914258 A CN202010914258 A CN 202010914258A CN 112509920 B CN112509920 B CN 112509920B
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China
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film
organic
substrate
plasma
gas
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CN202010914258.8A
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English (en)
Chinese (zh)
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CN112509920A (zh
Inventor
胜沼隆幸
本田昌伸
中根由太
石川慎也
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
CN202010914258.8A 2019-09-13 2020-09-03 蚀刻方法、等离子体处理装置和基片处理系统 Active CN112509920B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2019-167063 2019-09-13
JP2019167063 2019-09-13
JP2020-121613 2020-07-15
JP2020121613A JP7493400B2 (ja) 2019-09-13 2020-07-15 エッチング方法、プラズマ処理装置、及び基板処理システム

Publications (2)

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CN112509920A CN112509920A (zh) 2021-03-16
CN112509920B true CN112509920B (zh) 2026-01-09

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Country Status (4)

Country Link
US (1) US20230058079A1 (https=)
JP (1) JP7493400B2 (https=)
KR (2) KR102901251B1 (https=)
CN (1) CN112509920B (https=)

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US11538692B2 (en) * 2021-05-21 2022-12-27 Tokyo Electron Limited Cyclic plasma etching of carbon-containing materials
JP7731313B2 (ja) * 2022-04-12 2025-08-29 東京エレクトロン株式会社 半導体装置の製造方法および半導体装置の製造システム
JP2023183485A (ja) * 2022-06-16 2023-12-28 東京エレクトロン株式会社 基板処理装置
JP2025525607A (ja) * 2022-07-22 2025-08-05 ラム リサーチ コーポレーション シミュレートされたボッシュプロセスによる高アスペクト比炭素エッチング
WO2025215890A1 (ja) * 2024-04-09 2025-10-16 東京エレクトロン株式会社 プラズマ処理装置

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CN109417029A (zh) * 2016-07-08 2019-03-01 东京毅力科创株式会社 对被处理体进行处理的方法
CN109494153A (zh) * 2017-09-12 2019-03-19 东京毅力科创株式会社 处理被加工物的方法

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US7169440B2 (en) * 2002-04-16 2007-01-30 Tokyo Electron Limited Method for removing photoresist and etch residues
JPWO2007078011A1 (ja) * 2006-01-06 2009-06-11 日本電気株式会社 多層配線の製造方法と多層配線構造
WO2007132879A1 (ja) * 2006-05-17 2007-11-22 Nec Corporation 半導体装置、半導体装置の製造方法及び半導体製造装置
US20080179290A1 (en) * 2007-01-30 2008-07-31 Collins Kenneth S Temperature-switched process for wafer backside polymer removal and front side photoresist strip
US7781332B2 (en) * 2007-09-19 2010-08-24 International Business Machines Corporation Methods to mitigate plasma damage in organosilicate dielectrics using a protective sidewall spacer
US20090096106A1 (en) * 2007-10-12 2009-04-16 Air Products And Chemicals, Inc. Antireflective coatings
US8277670B2 (en) * 2008-05-13 2012-10-02 Lam Research Corporation Plasma process with photoresist mask pretreatment
JP2010062433A (ja) * 2008-09-05 2010-03-18 Sekisui Chem Co Ltd シリコン含有膜のエッチング方法および装置
US8598016B2 (en) * 2011-06-15 2013-12-03 Applied Materials, Inc. In-situ deposited mask layer for device singulation by laser scribing and plasma etch
JP6185305B2 (ja) 2013-06-28 2017-08-23 東京エレクトロン株式会社 プラズマエッチング方法およびプラズマエッチング装置
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JP6254516B2 (ja) * 2014-12-19 2017-12-27 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP5975128B2 (ja) * 2015-03-02 2016-08-23 東京エレクトロン株式会社 基板処理装置、基板処理方法
CN104779153A (zh) * 2015-05-06 2015-07-15 京东方科技集团股份有限公司 一种干刻蚀方法
JP6447441B2 (ja) * 2015-09-30 2019-01-09 株式会社デンソー 半導体装置の製造方法
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CN109494153A (zh) * 2017-09-12 2019-03-19 东京毅力科创株式会社 处理被加工物的方法

Also Published As

Publication number Publication date
KR20210031827A (ko) 2021-03-23
JP2021048390A (ja) 2021-03-25
KR102901251B1 (ko) 2025-12-16
KR20250154349A (ko) 2025-10-28
JP7493400B2 (ja) 2024-05-31
US20230058079A1 (en) 2023-02-23
CN112509920A (zh) 2021-03-16

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