KR102901251B1 - 에칭 방법, 플라즈마 처리 장치 및 기판 처리 시스템 - Google Patents

에칭 방법, 플라즈마 처리 장치 및 기판 처리 시스템

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Publication number
KR102901251B1
KR102901251B1 KR1020200112494A KR20200112494A KR102901251B1 KR 102901251 B1 KR102901251 B1 KR 102901251B1 KR 1020200112494 A KR1020200112494 A KR 1020200112494A KR 20200112494 A KR20200112494 A KR 20200112494A KR 102901251 B1 KR102901251 B1 KR 102901251B1
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South Korea
Prior art keywords
film
organic
gas
plasma
substrate
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Korean (ko)
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KR20210031827A (ko
Inventor
다카유키 가츠누마
마사노부 혼다
유타 나카네
신야 이시카와
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20210031827A publication Critical patent/KR20210031827A/ko
Priority to KR1020250153510A priority Critical patent/KR20250154349A/ko
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Classifications

    • H01L21/0337—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H01L21/02115—
    • H01L21/0332—
    • H01L21/31138—
    • H01L21/31144—
    • H01L21/67069—
    • H01L21/67167—
    • H01L21/67207—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
KR1020200112494A 2019-09-13 2020-09-03 에칭 방법, 플라즈마 처리 장치 및 기판 처리 시스템 Active KR102901251B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020250153510A KR20250154349A (ko) 2019-09-13 2025-10-22 에칭 방법, 플라즈마 처리 장치 및 기판 처리 시스템

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2019-167063 2019-09-13
JP2019167063 2019-09-13
JPJP-P-2020-121613 2020-07-15
JP2020121613A JP7493400B2 (ja) 2019-09-13 2020-07-15 エッチング方法、プラズマ処理装置、及び基板処理システム

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020250153510A Division KR20250154349A (ko) 2019-09-13 2025-10-22 에칭 방법, 플라즈마 처리 장치 및 기판 처리 시스템

Publications (2)

Publication Number Publication Date
KR20210031827A KR20210031827A (ko) 2021-03-23
KR102901251B1 true KR102901251B1 (ko) 2025-12-16

Family

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KR1020200112494A Active KR102901251B1 (ko) 2019-09-13 2020-09-03 에칭 방법, 플라즈마 처리 장치 및 기판 처리 시스템
KR1020250153510A Pending KR20250154349A (ko) 2019-09-13 2025-10-22 에칭 방법, 플라즈마 처리 장치 및 기판 처리 시스템

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Country Status (4)

Country Link
US (1) US20230058079A1 (https=)
JP (1) JP7493400B2 (https=)
KR (2) KR102901251B1 (https=)
CN (1) CN112509920B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
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US11538692B2 (en) * 2021-05-21 2022-12-27 Tokyo Electron Limited Cyclic plasma etching of carbon-containing materials
JP7731313B2 (ja) * 2022-04-12 2025-08-29 東京エレクトロン株式会社 半導体装置の製造方法および半導体装置の製造システム
JP2023183485A (ja) * 2022-06-16 2023-12-28 東京エレクトロン株式会社 基板処理装置
JP2025525607A (ja) * 2022-07-22 2025-08-05 ラム リサーチ コーポレーション シミュレートされたボッシュプロセスによる高アスペクト比炭素エッチング
WO2025215890A1 (ja) * 2024-04-09 2025-10-16 東京エレクトロン株式会社 プラズマ処理装置

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US20090286400A1 (en) 2008-05-13 2009-11-19 Lam Research Corporation Plasma process with photoresist mask pretreatment
JP2014523110A (ja) * 2011-06-15 2014-09-08 アプライド マテリアルズ インコーポレイテッド レーザスクライビング・プラズマエッチングによるデバイスの個片化用のインサイチュー蒸着マスク層
JP2015109479A (ja) * 2015-03-02 2015-06-11 東京エレクトロン株式会社 エッチング方法、エッチング装置及びリング部材
JP2016119357A (ja) 2014-12-19 2016-06-30 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US20160343580A1 (en) 2014-12-04 2016-11-24 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
JP2017069432A (ja) 2015-09-30 2017-04-06 株式会社デンソー 半導体装置の製造方法
JP2018200925A (ja) * 2017-05-25 2018-12-20 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP2019050342A (ja) * 2017-09-12 2019-03-28 東京エレクトロン株式会社 被加工物を処理する方法
US20190198350A1 (en) 2017-12-25 2019-06-27 Tokyo Electron Limited Method of processing substrate
JP2019114778A (ja) 2017-12-25 2019-07-11 東京エレクトロン株式会社 基板を処理する方法

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Publication number Priority date Publication date Assignee Title
US20090286400A1 (en) 2008-05-13 2009-11-19 Lam Research Corporation Plasma process with photoresist mask pretreatment
JP2014523110A (ja) * 2011-06-15 2014-09-08 アプライド マテリアルズ インコーポレイテッド レーザスクライビング・プラズマエッチングによるデバイスの個片化用のインサイチュー蒸着マスク層
US20160343580A1 (en) 2014-12-04 2016-11-24 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
JP2016119357A (ja) 2014-12-19 2016-06-30 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2015109479A (ja) * 2015-03-02 2015-06-11 東京エレクトロン株式会社 エッチング方法、エッチング装置及びリング部材
JP5975128B2 (ja) 2015-03-02 2016-08-23 東京エレクトロン株式会社 基板処理装置、基板処理方法
JP2017069432A (ja) 2015-09-30 2017-04-06 株式会社デンソー 半導体装置の製造方法
JP2018200925A (ja) * 2017-05-25 2018-12-20 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP2019050342A (ja) * 2017-09-12 2019-03-28 東京エレクトロン株式会社 被加工物を処理する方法
US20190198350A1 (en) 2017-12-25 2019-06-27 Tokyo Electron Limited Method of processing substrate
JP2019114778A (ja) 2017-12-25 2019-07-11 東京エレクトロン株式会社 基板を処理する方法

Also Published As

Publication number Publication date
KR20210031827A (ko) 2021-03-23
JP2021048390A (ja) 2021-03-25
KR20250154349A (ko) 2025-10-28
JP7493400B2 (ja) 2024-05-31
US20230058079A1 (en) 2023-02-23
CN112509920A (zh) 2021-03-16
CN112509920B (zh) 2026-01-09

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