JP7470458B2 - シリコン基板上のGaN/2次元AlNヘテロ接合整流器及びその製造方法 - Google Patents
シリコン基板上のGaN/2次元AlNヘテロ接合整流器及びその製造方法 Download PDFInfo
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- JP7470458B2 JP7470458B2 JP2022565938A JP2022565938A JP7470458B2 JP 7470458 B2 JP7470458 B2 JP 7470458B2 JP 2022565938 A JP2022565938 A JP 2022565938A JP 2022565938 A JP2022565938 A JP 2022565938A JP 7470458 B2 JP7470458 B2 JP 7470458B2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 35
- 229910052710 silicon Inorganic materials 0.000 title claims description 35
- 239000010703 silicon Substances 0.000 title claims description 35
- 239000000758 substrate Substances 0.000 title claims description 35
- 238000000034 method Methods 0.000 title claims description 27
- 229910004205 SiNX Inorganic materials 0.000 claims description 41
- 238000002161 passivation Methods 0.000 claims description 28
- 229920002120 photoresistant polymer Polymers 0.000 claims description 23
- 239000008367 deionised water Substances 0.000 claims description 22
- 229910021641 deionized water Inorganic materials 0.000 claims description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 22
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 20
- 238000002955 isolation Methods 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 238000000206 photolithography Methods 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 16
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 11
- 238000011161 development Methods 0.000 claims description 11
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- 238000000313 electron-beam-induced deposition Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 238000007654 immersion Methods 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims description 2
- 239000012159 carrier gas Substances 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 238000009210 therapy by ultrasound Methods 0.000 claims description 2
- 238000012546 transfer Methods 0.000 claims description 2
- 239000010409 thin film Substances 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000004549 pulsed laser deposition Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Description
シリコン基板上にGaNバッファ層、炭素ドープ半絶縁性GaN層、2次元AlN層、非ドープGaN層及び非ドープInGaN層を順次成長させて、整流器エピタキシャルウエハを得るステップ(1)と、
ステップ(1)で得られた整流器エピタキシャルウエハをアセトン、無水エタノールに順次入れて超音波処理し、取り出した後に脱イオン水で洗浄して窒素ガスで乾燥させるステップ(2)と、
ショットキーコンタクト電極パターンを整流器エピタキシャルウエハに移すステップ(3)であって、ステップ(2)で得られた整流器エピタキシャルウエハ上にフォトレジストを均一にスピンコーティングして、フォトリソグラフィ装置に入れて露光し、最後にエピタキシャルウエハを現像液で洗浄してパターンを現像するステップ(3)と、
反応性イオンエッチング法を用いて、整流器エピタキシャルウエハのショットキーコンタクト電極パターンに沿って凹溝をエッチングして、オーミックコンタクト電極を得るステップ(4)と、
ショットキーコンタクト電極を製造するステップ(5)であって、ステップ(4)で得られたオーミックコンタクト電極パターンの凹溝がエッチングされた整流器エピタキシャルウエハを電子ビーム蒸着装置に入れて、その後キャビティを真空化し、金属ターゲットを電子銃で衝撃して、金属をエピタキシャルウエハの表面に堆積させ、蒸着が終了した後に、エピタキシャルウエハをアニールするステップ(5)と、
整流器エピタキシャルウエハを接着剤除去溶液に浸入して脱イオン水で洗浄し、その後エピタキシャルウエハをアセトンに入れて超音波処理して、窒素ガスで乾燥させるステップ(6)と、
マスク板の位置合わせマークにより、整流器エピタキシャルウエハを位置合わせし、ステップ(3)を繰り返し、対応する位置でフォトリソグラフィ現像を行って、デバイスのオーミックコンタクト電極パターンを製造して洗浄するステップ(7)と、
オーミックコンタクト電極を製造するステップ(8)であって、ステップ(5)と(6)を繰り返し、電極金属を堆積した後にアニールして洗浄し、オーミックコンタクト電極の製造を完了するステップ(8)と、
窒化ケイ素パッシベーション層を製造するステップ(9)であって、ステップ(8)で得られた整流器エピタキシャルウエハをプラズマ強化化学気相堆積装置に入れて、順次昇温し、真空化し、キャリアガス及び反応ガスを導入し、最後にエピタキシャルウエハの表面にSiNxパッシベーション層を堆積するステップ(9)と、
ステップ(3)を繰り返し、オーミックコンタクト電極とショットキーコンタクト電極で露光して現像して、2つの電極上のSiNxを露出させるステップ(10)と、
ウェットエッチング法を用いて、露出したSiNxをエッチング除去し、最後にステップ(6)を繰り返し、整流器エピタキシャルウエハの表面に残留したフォトレジストとSiNxパッシベーション層を除去するステップ(11)と、
マスク板の位置合わせマークにより位置合わせし、ステップ(3)と(4)を繰り返し、メサ分離パターンをエピタキシャルウエハの表面に移して表面に凹溝をエッチングするステップ(12)と、
ステップ(12)で得られた整流器エピタキシャルウエハをプラズマ支援化学気相堆積装置に入れて、ステップ(8)を繰り返し、ステップ(12)でエッチングされた凹溝内にSiNxパッシベーション層を堆積するステップ(13)と、
ステップ(11)を繰り返し、エピタキシャルウエハの表面の余分なフォトレジストを除去した後に、接着剤除去溶液の浸漬と超音波洗浄によって整流器エピタキシャルウエハの表面に残留したフォトレジストとSiNxを除去し、シリコン基板上のGaN/2次元AlNヘテロ接合整流器の製造を完了するステップ(14)と、を含む。
Claims (10)
- シリコン基板上のGaN/2次元AlNヘテロ接合整流器であって、順次積層されたシリコン基板(1)、GaNバッファ層(2)、炭素ドープ半絶縁性GaN層(3)、2次元AlN層(4)、非ドープGaN層(5)、非ドープInGaN層(6)及びSiNxパッシベーション層(7)を含み、非ドープInGaN層(6)の一側に設置されたメサ分離凹溝(8)及びショットキーコンタクト電極(9)をさらに含み、前記メサ分離凹溝(8)は、非ドープGaN層(5)、非ドープInGaN層(6)、SiNxパッシベーション層(7)及びショットキーコンタクト電極(9)に接触し、前記ショットキーコンタクト電極(9)は、メサ分離凹溝(8)、非ドープGaN層(5)に接触する、ことを特徴とするシリコン基板上のGaN/2次元AlNヘテロ接合整流器。
- 前記GaNバッファ層(2)の厚さは650~900nmである、ことを特徴とする請求項1に記載のシリコン基板上のGaN/2次元AlNヘテロ接合整流器。
- 前記炭素ドープ半絶縁性GaN層(3)のドープ濃度は5.0×1018~6.0×1018cm-3であり、厚さは80~180nmである、ことを特徴とする請求項1に記載のシリコン基板上のGaN/2次元AlNヘテロ接合整流器。
- 前記2次元AlN層(4)の厚さは2~4個の原子層である、ことを特徴とする請求項1に記載のシリコン基板上のGaN/2次元AlNヘテロ接合整流器。
- 前記2次元AlN層(4)の厚さは2つの原子層である、ことを特徴とする請求項4に記載のシリコン基板上のGaN/2次元AlNヘテロ接合整流器。
- 前記非ドープGaN層(5)の厚さは350~550nmである、ことを特徴とする請求項1に記載のシリコン基板上のGaN/2次元AlNヘテロ接合整流器。
- 前記非ドープInGaN層(6)の厚さは50~200nmである、ことを特徴とする請求項1に記載のシリコン基板上のGaN/2次元AlNヘテロ接合整流器。
- 前記SiNxパッシベーション層(7)中のxは、=1.29~1.51である、ことを特徴とする請求項1に記載のシリコン基板上のGaN/2次元AlNヘテロ接合整流器。
- 前記メサ分離凹溝(8)の深さは1.2~1.5μmであり、前記ショットキーコンタクト電極(9)の厚さは220~250nmである、ことを特徴とする請求項1に記載のシリコン基板上のGaN/2次元AlNヘテロ接合整流器。
- 請求項1~9のいずれか1項に記載のシリコン基板上のGaN/2次元AlNヘテロ接合整流器の製造方法であって、
シリコン基板上にGaNバッファ層、炭素ドープ半絶縁性GaN層、2次元AlN層、非ドープGaN層及び非ドープInGaN層を順次成長させて、整流器エピタキシャルウエハを得るステップ(1)と、
ステップ(1)で得られた整流器エピタキシャルウエハをアセトン、無水エタノールに順次入れて超音波処理し、取り出した後に脱イオン水で洗浄して窒素ガスで乾燥させるステップ(2)と、
ショットキーコンタクト電極パターンを整流器エピタキシャルウエハに移すステップ(3)であって、ステップ(2)で得られた整流器エピタキシャルウエハ上にフォトレジストを均一にスピンコーティングして、フォトリソグラフィ装置に入れて露光し、最後にエピタキシャルウエハを現像液で洗浄してパターンを現像するステップ(3)と、
反応性イオンエッチング法を用いて、整流器エピタキシャルウエハのショットキーコンタクト電極パターンに沿って凹溝をエッチングして、オーミックコンタクト電極を得るステップ(4)と、
ショットキーコンタクト電極を製造するステップ(5)であって、ステップ(4)で得られたオーミックコンタクト電極パターンの凹溝がエッチングされた整流器エピタキシャルウエハを電子ビーム蒸着装置に入れて、その後キャビティを真空化し、金属ターゲットを電子銃で衝撃して、金属をエピタキシャルウエハの表面に堆積させ、蒸着が終了した後に、エピタキシャルウエハをアニールするステップ(5)と、
整流器エピタキシャルウエハを接着剤除去溶液に浸入して脱イオン水で洗浄し、その後エピタキシャルウエハをアセトンに入れて超音波処理して、窒素ガスで乾燥させるステップ(6)と、
マスク板の位置合わせマークにより、整流器エピタキシャルウエハを位置合わせし、ステップ(3)を繰り返し、対応する位置でフォトリソグラフィ現像を行って、デバイスのオーミックコンタクト電極パターンを製造して洗浄するステップ(7)と、
オーミックコンタクト電極を製造するステップ(8)であって、ステップ(5)と(6)を繰り返し、電極金属を堆積した後にアニールして洗浄し、オーミックコンタクト電極の製造を完了するステップ(8)と、
窒化ケイ素パッシベーション層を製造するステップ(9)であって、ステップ(8)で得られた整流器エピタキシャルウエハをプラズマ強化化学気相堆積装置に入れて、順次昇温し、真空化し、キャリアガス及び反応ガスを導入し、最後にエピタキシャルウエハの表面にSiNxパッシベーション層を堆積するステップ(9)と、
ステップ(3)を繰り返し、オーミックコンタクト電極とショットキーコンタクト電極で露光して現像して、2つの電極上のSiNxを露出させるステップ(10)と、
ウェットエッチング法を用いて、露出したSiNxをエッチング除去し、最後にステップ(6)を繰り返し、整流器エピタキシャルウエハの表面に残留したフォトレジストとSiNxパッシベーション層を除去するステップ(11)と、
マスク板の位置合わせマークにより位置合わせし、ステップ(3)と(4)を繰り返し、メサ分離パターンをエピタキシャルウエハの表面に移して表面に凹溝をエッチングするステップ(12)と、
ステップ(12)で得られた整流器エピタキシャルウエハをプラズマ支援化学気相堆積装置に入れて、ステップ(8)を繰り返し、ステップ(12)でエッチングされた凹溝内にSiNxパッシベーション層を堆積するステップ(13)と、
ステップ(11)を繰り返し、エピタキシャルウエハの表面の余分なフォトレジストを除去した後に、接着剤除去溶液の浸漬と超音波洗浄によって整流器エピタキシャルウエハの表面に残留したフォトレジストとSiNxを除去し、シリコン基板上のGaN/2次元AlNヘテロ接合整流器の製造を完了するステップ(14)と、を含む、ことを特徴とするシリコン基板上のGaN/2次元AlNヘテロ接合整流器の製造方法。
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JP2012084653A (ja) | 2010-10-08 | 2012-04-26 | Advanced Power Device Research Association | 半導体装置およびその製造方法 |
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