JP7435748B2 - パターン形成装置、並びにパターン形成方法 - Google Patents

パターン形成装置、並びにパターン形成方法 Download PDF

Info

Publication number
JP7435748B2
JP7435748B2 JP2022514057A JP2022514057A JP7435748B2 JP 7435748 B2 JP7435748 B2 JP 7435748B2 JP 2022514057 A JP2022514057 A JP 2022514057A JP 2022514057 A JP2022514057 A JP 2022514057A JP 7435748 B2 JP7435748 B2 JP 7435748B2
Authority
JP
Japan
Prior art keywords
substrate
mark
pattern
pattern forming
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022514057A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021206044A5 (https=
JPWO2021206044A1 (https=
Inventor
正紀 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of JPWO2021206044A1 publication Critical patent/JPWO2021206044A1/ja
Publication of JPWO2021206044A5 publication Critical patent/JPWO2021206044A5/ja
Application granted granted Critical
Publication of JP7435748B2 publication Critical patent/JP7435748B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/24—Curved surfaces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019—Calibration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Document Processing Apparatus (AREA)
JP2022514057A 2020-04-06 2021-04-05 パターン形成装置、並びにパターン形成方法 Active JP7435748B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020068034 2020-04-06
JP2020068034 2020-04-06
PCT/JP2021/014467 WO2021206044A1 (ja) 2020-04-06 2021-04-05 パターン形成装置、並びにパターン形成方法

Publications (3)

Publication Number Publication Date
JPWO2021206044A1 JPWO2021206044A1 (https=) 2021-10-14
JPWO2021206044A5 JPWO2021206044A5 (https=) 2022-09-15
JP7435748B2 true JP7435748B2 (ja) 2024-02-21

Family

ID=78023054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022514057A Active JP7435748B2 (ja) 2020-04-06 2021-04-05 パターン形成装置、並びにパターン形成方法

Country Status (5)

Country Link
JP (1) JP7435748B2 (https=)
KR (2) KR102853866B1 (https=)
CN (1) CN115380253A (https=)
TW (2) TWI781572B (https=)
WO (1) WO2021206044A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102515305B1 (ko) * 2022-05-18 2023-03-29 에스케이엔펄스 주식회사 섀도우 마스크 및 이를 이용한 블랭크 마스크의 제조방법
JP2024014031A (ja) 2022-07-21 2024-02-01 キヤノン株式会社 検出装置、リソグラフィー装置および物品製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004069585A (ja) 2002-08-08 2004-03-04 Fuji Photo Optical Co Ltd 平行度測定方法
WO2015152218A1 (ja) 2014-04-01 2015-10-08 株式会社ニコン 基板処理装置、デバイス製造方法及び基板処理方法
US20160313653A1 (en) 2013-12-05 2016-10-27 Asml Netherlands B.V. Method and Apparatus for Measuring a Structure on a Substrate, Models for Error Correction, Computer Program Products for Implementing such Methods and Apparatus

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677116A (ja) * 1992-08-27 1994-03-18 Nikon Corp 位置検出装置
JP3445100B2 (ja) * 1997-06-02 2003-09-08 キヤノン株式会社 位置検出方法及び位置検出装置
JP2006098726A (ja) 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd アライメント部の校正方法と、アライメント校正可能な描画装置と、搬送装置
JP2014081452A (ja) * 2012-10-16 2014-05-08 Nikon Corp 露光装置、およびデバイス製造方法
JP2015125424A (ja) * 2013-12-27 2015-07-06 キヤノン株式会社 光学装置、リソグラフィ装置、及び物品の製造方法
CN110083018A (zh) * 2014-04-01 2019-08-02 株式会社尼康 基板处理装置的调整方法
JP6465591B2 (ja) * 2014-08-27 2019-02-06 株式会社オーク製作所 描画装置
CN107329379B (zh) * 2016-04-29 2019-01-18 上海微电子装备（集团）股份有限公司 双层对准装置和双层对准方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004069585A (ja) 2002-08-08 2004-03-04 Fuji Photo Optical Co Ltd 平行度測定方法
US20160313653A1 (en) 2013-12-05 2016-10-27 Asml Netherlands B.V. Method and Apparatus for Measuring a Structure on a Substrate, Models for Error Correction, Computer Program Products for Implementing such Methods and Apparatus
WO2015152218A1 (ja) 2014-04-01 2015-10-08 株式会社ニコン 基板処理装置、デバイス製造方法及び基板処理方法

Also Published As

Publication number Publication date
CN115380253A (zh) 2022-11-22
WO2021206044A1 (ja) 2021-10-14
KR102853866B1 (ko) 2025-09-02
JPWO2021206044A1 (https=) 2021-10-14
TW202303300A (zh) 2023-01-16
TWI781572B (zh) 2022-10-21
TWI869708B (zh) 2025-01-11
KR20220150942A (ko) 2022-11-11
KR20250133998A (ko) 2025-09-09
TW202205031A (zh) 2022-02-01

Similar Documents

Publication Publication Date Title
JP6074898B2 (ja) 基板処理装置
TWI461858B (zh) 表面位置偵測裝置、曝光裝置、表面位置偵測方法以及元件製造方法
TW201805726A (zh) 圖案描繪裝置、圖案描繪方法、以及元件製造方法
JP7435748B2 (ja) パターン形成装置、並びにパターン形成方法
US9041907B2 (en) Drawing device and drawing method
JP2005003762A (ja) 画素位置特定方法、画像ずれ補正方法、および画像形成装置
JP2006349945A (ja) 露光装置
TW201702762A (zh) 圖案描繪裝置及圖案描繪方法
JP5564861B2 (ja) 伸縮測定方法と伸縮測定装置
JP7563555B2 (ja) パターン形成装置
JP2014035412A (ja) 露光装置、およびデバイス製造方法
JP2015219244A (ja) 基板処理装置、デバイス製造方法及び基板処理方法
WO2006137429A1 (ja) フレームデータ作成装置、作成方法、作成プログラム及び該プログラムを格納した記憶媒体、及び描画装置
CN108885337B (zh) 光束扫描装置及图案描绘装置
JP6547609B2 (ja) デバイス形成装置およびパターン形成装置
JP6702487B2 (ja) パターン形成装置
KR101273800B1 (ko) 마스크리스 노광기의 정렬장치
JP2005116779A (ja) 露光装置およびデバイス製造方法
JP2015076491A (ja) 検出装置、リソグラフィ装置、および物品の製造方法
JP6733778B2 (ja) 基板処理装置、及びデバイス製造方法
JP6638355B2 (ja) パターン描画装置
JPH11233410A (ja) 投影露光装置及び方法
JP2013191654A (ja) 描画装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220706

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220706

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230725

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20230914

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20231020

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240109

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240122

R150 Certificate of patent or registration of utility model

Ref document number: 7435748

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150